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Illumination-Induced Changes in PcVO Pigment Films.
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- Journal of Structural Chemistry, 2024, v. 65, n. 6, p. 1071, doi. 10.1134/S0022476624060015
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Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 3, p. 586, doi. 10.1134/S1027451024700149
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Study of the Reflectivity and Microstructure of Mo/Be Multilayer Mirrors.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 6, p. 1319, doi. 10.1134/S1027451023060241
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Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
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- Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II–Radiation Test and Hydrolytic Stability.
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- Materials (1996-1944), 2023, v. 16, n. 3, p. 965, doi. 10.3390/ma16030965
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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: I–Synthesis, Sintering and Characterization.
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- Materials (1996-1944), 2023, v. 16, n. 3, p. 990, doi. 10.3390/ma16030990
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- Article
Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.
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- Semiconductors, 2021, v. 55, n. 11, p. 865, doi. 10.1134/S1063782621100171
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Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al)GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si(100) Substrates.
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- Technical Physics Letters, 2021, v. 47, n. 5, p. 413, doi. 10.1134/S1063785021040283
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Morphology and Structure of Defected Niobium Oxide Nonuniform Arrays Formed by Anodizing Bilayer Al/Nb Systems.
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- Technical Physics, 2020, v. 65, n. 11, p. 1771, doi. 10.1134/S1063784220110213
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The Microstructure of Transition Boundaries in Multilayer Mo/Be Systems.
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- Technical Physics, 2020, v. 65, n. 11, p. 1800, doi. 10.1134/S1063784220110250
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The Magnetoelectric Effect in Ferroelectric/Ferromagnetic Film Hybrid Systems with Easy-Plane and Easy-Axis Anisotropy.
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- Technical Physics, 2020, v. 65, n. 11, p. 1832, doi. 10.1134/S1063784220110158
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Possibilities of the Master Mask Method in Analysis of Characteristics of Planar HTSC Structures Depending on Superconducting Film Thickness.
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- Technical Physics, 2020, v. 65, n. 10, p. 1605, doi. 10.1134/S106378422010014X
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Modification of the Ratio between sp<sup>2</sup>- to sp<sup>3</sup>-Hybridized Carbon Components in PECVD Diamond-Like Films.
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- Semiconductors, 2020, v. 54, n. 9, p. 1047, doi. 10.1134/S1063782620090316
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Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate.
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- Semiconductors, 2020, v. 54, n. 9, p. 1056, doi. 10.1134/S1063782620090213
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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
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- Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
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Atomic Force Microscopy Examination of Elementary Processes in Metalorganic Compound Hydride Epitaxy of GaAs-Based Nanoheterostructures.
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- Technical Physics, 2020, v. 65, n. 5, p. 791, doi. 10.1134/S1063784220050035
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SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States.
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 290, doi. 10.1134/S1063785020030190
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Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 14, p. 1910, doi. 10.1134/S1063782619140082
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Magnetostriction Effect in Ferromagnetic Films with Easy-Axis and Easy-Plane Anisotropies.
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- Technical Physics, 2019, v. 64, n. 11, p. 1646, doi. 10.1134/S1063784219110148
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Influence of Thermal Annealing on the Properties of Multilayer Mo/Be Mirrors.
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- Technical Physics, 2019, v. 64, n. 11, p. 1692, doi. 10.1134/S1063784219110252
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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates.
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- Semiconductors, 2019, v. 53, n. 10, p. 1318, doi. 10.1134/S1063782619100154
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Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers.
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- Semiconductors, 2019, v. 53, n. 10, p. 1357, doi. 10.1134/S1063782619100038
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Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond.
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- Semiconductors, 2019, v. 53, n. 9, p. 1203, doi. 10.1134/S1063782619090136
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Multi-Analytical Study of Degradation Processes in Perovskite Films for Optoelectronic Applications.
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- Acta Physica Polonica: A, 2019, v. 135, n. 5, p. 1039, doi. 10.12693/APhysPolA.135.1039
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Microstructure and Density of Mo Films in Multilayer Mo/Si Mirrors.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 1, p. 8, doi. 10.1134/S1027451019010208
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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
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- Semiconductors, 2018, v. 52, n. 12, p. 1547, doi. 10.1134/S1063782618120060
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Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (110) Sapphire.
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- Semiconductors, 2018, v. 52, n. 11, p. 1412, doi. 10.1134/S106378261811026X
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Study of the Structural and Morphological Properties of HPHT Diamond Substrates.
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- Semiconductors, 2018, v. 52, n. 11, p. 1432, doi. 10.1134/S1063782618110271
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Plasma Chemical Etching of Gallium Arsenide in C<sub>2</sub>F<sub>5</sub>Cl-Based Inductively Coupled Plasma.
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- Semiconductors, 2018, v. 52, n. 11, p. 1473, doi. 10.1134/S1063782618110180
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Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut.
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- Semiconductors, 2018, v. 52, n. 11, p. 1491, doi. 10.1134/S1063782618110088
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A Comparative Analysis of Catalysts for the Preparation of Germanium through Hydrogen Reduction of Germanium Tetrachloride.
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- Inorganic Materials, 2018, v. 54, n. 10, p. 971, doi. 10.1134/S0020168518100084
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The Gas-Phase Synthesis of a New Functional Hybrid Material on the Basis of Multiwalled Carbon Nanotubes Decorated with Faceted Aluminum Nanocrystals.
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- Technical Physics Letters, 2018, v. 44, n. 10, p. 865, doi. 10.1134/S1063785018100085
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New Hybrid Material Based on Multiwalled Carbon Nanotubes Decorated by Rhenium-Tungsten Nanodendrites.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 4, p. 682, doi. 10.1134/S1027451018040110
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Grazing Incidence X-Ray Diffraction Study of Tantalum Thin Films.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 4, p. 701, doi. 10.1134/S1027451018040183
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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry.
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- Technical Physics Letters, 2018, v. 44, n. 4, p. 297, doi. 10.1134/S106378501804003X
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A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam.
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- Technical Physics Letters, 2018, v. 44, n. 4, p. 320, doi. 10.1134/S1063785018040181
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Synthesis of Hybrid Materials Based on Iron Nanoparticle-Decorated Multiwalled Carbon Nanotubes.
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- Inorganic Materials, 2018, v. 54, n. 3, p. 233, doi. 10.1134/S0020168518030068
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Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers.
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- Technical Physics, 2018, v. 63, n. 2, p. 211, doi. 10.1134/S1063784218020068
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Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen.
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- Semiconductors, 2017, v. 51, n. 12, p. 1537, doi. 10.1134/S1063782617120041
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Low-temperature deposition of SiN Films in SiH/Ar + N inductively coupled plasma under high silane dilution with argon.
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- Semiconductors, 2017, v. 51, n. 11, p. 1449, doi. 10.1134/S1063782617110215
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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.
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- Semiconductors, 2017, v. 51, n. 11, p. 1527, doi. 10.1134/S1063782617110070
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Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry.
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- Technical Physics Letters, 2017, v. 43, n. 5, p. 477, doi. 10.1134/S1063785017050170
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Investigation of X-ray diffraction limitations upon the analysis of tellurium-atom injection into GaAs epitaxial layers.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2017, v. 11, n. 2, p. 361, doi. 10.1134/S1027451017020069
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Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates.
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- Semiconductors, 2016, v. 50, n. 12, p. 1622, doi. 10.1134/S1063782616120289
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Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures.
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- Semiconductors, 2016, v. 50, n. 12, p. 1630, doi. 10.1134/S1063782616120137
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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source.
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- Semiconductors, 2016, v. 50, n. 11, p. 1439, doi. 10.1134/S1063782616110075
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Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method.
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- Semiconductors, 2016, v. 50, n. 11, p. 1511, doi. 10.1134/S1063782616110166
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Phase transitions in hybrid SFS structures with thin superconducting layers.
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- JETP Letters, 2016, v. 104, n. 5, p. 329, doi. 10.1134/S0021364016170148
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Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry.
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- Technical Physics Letters, 2016, v. 42, n. 8, p. 783, doi. 10.1134/S106378501608006X
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A study of planar structures formed on the modified AlO surfaces determining the topology of superconducting elements during YBaCuO deposition.
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- Technical Physics Letters, 2016, v. 42, n. 6, p. 594, doi. 10.1134/S1063785016060110
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