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Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method.
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- Crystallography Reports, 2022, v. 67, n. 7, p. 1095, doi. 10.1134/S1063774522070483
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Effect of a Travelling Magnetic Field on the Parameters of Tellurium-Doped Gallium Arsenide Single Crystals Grown by the Czochralski Method.
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- Crystallography Reports, 2022, v. 67, n. 7, p. 1099, doi. 10.1134/S1063774522070495
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- Article
Formation of Facets in GaAs Crystals Doped with Sn and Te during the Growth by the Czochralski Method.
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- Crystallography Reports, 2022, v. 67, n. 3, p. 323, doi. 10.1134/S1063774522030245
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- Article
Polycrystallinity in Gallium Arsenide Crystals Grown by the Czochralski Method.
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- Crystallography Reports, 2021, v. 66, n. 6, p. 931, doi. 10.1134/S1063774521060250
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- Article
Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method.
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- Crystallography Reports, 2020, v. 65, n. 6, p. 832, doi. 10.1134/S1063774520060413
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- Article
Magnetoplastic Effect in Te-Doped GaAs Single Crystals.
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- Crystallography Reports, 2020, v. 65, n. 1, p. 7, doi. 10.1134/S1063774520010277
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- Article
Thermally Stimulated Relaxation of Misfit Strains in Si<sub>1 – x</sub>Ge<sub>x</sub>/Si(100) Heterostructures with Different Buffer Layers.
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- Crystallography Reports, 2005, v. 50, n. 6, p. 1020, doi. 10.1134/1.2132412
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- Article
Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.
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- Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407
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- Article
Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge[sup +] Ions.
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- Semiconductors, 2004, v. 38, n. 3, p. 313, doi. 10.1134/1.1682335
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- Article
Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon.
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- Semiconductors, 1999, v. 33, n. 6, p. 610, doi. 10.1134/1.1187763
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- Article
Investigation of the formation of transition layers during LPE growth of GaAs.
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- Scanning, 1993, v. 15, n. 6, p. 333, doi. 10.1002/sca.4950150606
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- Article