650 ps SET speed in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change memory induced by TiO<sub>2</sub> dielectric crystal plane.
- Published in:
- InfoMat, 2024, v. 6, n. 9, p. 1, doi. 10.1002/inf2.12598
- By:
- Publication type:
- Article
Works by Yu, Niannian
Results: 4
1
2
Optoelectronic Transistor Based on InSe/MoS<sub>2</sub> Heterostructure for Multimodal Nociceptor.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400111
- By:
- Publication type:
- Article
3
A type-II GeSe/SnTe heterostructure with superior optical absorption and strain tunable photovoltaic properties.
- Published in:
- European Physical Journal - Applied Physics, 2023, v. 98, p. 1, doi. 10.1051/epjap/2023230029
- By:
- Publication type:
- Article
4
Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS<sub>2</sub> van der Waals Heterostructure under UV–Ozone Treatment.
- Published in:
- Small Methods, 2023, v. 7, n. 6, p. 1, doi. 10.1002/smtd.202201679
- By:
- Publication type:
- Article