High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 27, p. 4219, doi. 10.1002/adfm.201501170
- By:
- Publication type:
- Article
Works by Yu, Hyun‐Yong
Results: 18
1
2
Photodetectors: High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping (Adv. Funct. Mater. 27/2015).
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 27, p. 4368, doi. 10.1002/adfm.201570188
- By:
- Publication type:
- Article
3
Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS<sub>2</sub> Channel and Its Application to Infrared Detectable Phototransistors.
- Published in:
- Advanced Science, 2021, v. 8, n. 12, p. 1, doi. 10.1002/advs.202100208
- By:
- Publication type:
- Article
4
Rhenium Diselenide (ReSe<sub>2</sub>) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique.
- Published in:
- Advanced Science, 2019, v. 6, n. 21, p. N.PAG, doi. 10.1002/advs.201901255
- By:
- Publication type:
- Article
5
CMOS voltage-controlled oscillator with high-performance MEMS tunable inductor.
- Published in:
- 2021
- By:
- Publication type:
- Letter
6
Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor.
- Published in:
- Small, 2021, v. 17, n. 30, p. 1, doi. 10.1002/smll.202100242
- By:
- Publication type:
- Article
7
Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks.
- Published in:
- Small, 2020, v. 16, n. 49, p. 1, doi. 10.1002/smll.202004371
- By:
- Publication type:
- Article
8
Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in Van Der Waals Single‐Channel.
- Published in:
- Advanced Functional Materials, 2025, v. 35, n. 15, p. 1, doi. 10.1002/adfm.202420666
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- Publication type:
- Article
9
Flexible sensing probe for the simultaneous monitoring of neurotransmitters imbalance.
- Published in:
- 2024
- By:
- Publication type:
- Letter
10
Charge transfer mechanism for realization of double negative differential transconductance.
- Published in:
- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00454-z
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- Publication type:
- Article
11
An Artificial Neuron Using a Bipolar Electrochemical Metallization Switch and Its Enhanced Spiking Properties through Filament Confinement.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000410
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- Publication type:
- Article
12
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films.
- Published in:
- Materials (1996-1944), 2020, v. 13, n. 13, p. 2968, doi. 10.3390/ma13132968
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- Publication type:
- Article
13
A High-Performance WSe<sub>2</sub>/ h-BN Photodetector using a Triphenylphosphine (PPh<sub>3</sub>)-Based n-Doping Technique.
- Published in:
- Advanced Materials, 2016, v. 28, n. 24, p. 4824, doi. 10.1002/adma.201600032
- By:
- Publication type:
- Article
14
Graphene: Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design (Adv. Mater. 5/2016).
- Published in:
- Advanced Materials, 2016, v. 28, n. 5, p. 975, doi. 10.1002/adma.201670034
- By:
- Publication type:
- Article
15
Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design.
- Published in:
- Advanced Materials, 2016, v. 28, n. 5, p. 864, doi. 10.1002/adma.201503715
- By:
- Publication type:
- Article
16
Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe<sub>2</sub> Insertion Layer.
- Published in:
- Advanced Materials Interfaces, 2023, v. 10, n. 7, p. 1, doi. 10.1002/admi.202202296
- By:
- Publication type:
- Article
17
Enhanced Electrical Polarization in van der Waals α‐In<sub>2</sub>Se<sub>3</sub> Ferroelectric Semiconductor Field‐Effect Transistors by Eliminating Surface Screening Charge.
- Published in:
- Small, 2024, v. 20, n. 50, p. 1, doi. 10.1002/smll.202405459
- By:
- Publication type:
- Article
18
First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing.
- Published in:
- Small, 2024, v. 20, n. 19, p. 1, doi. 10.1002/smll.202309467
- By:
- Publication type:
- Article