Works by Yu, Guohao

Results: 33

Current Drops in CF 4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 8, p. 1809, doi. 10.3390/electronics12081809

By:

Ma, Ying;
Chen, Liang;
Dong, Zhihua;
Hong, Yifang;
Xiao, Yang;
Xin, Yijie;
Zhang, Bin;
Qin, Hua;
Zhang, Ting;
Zhang, Xiaodong;
Yu, Guohao;
Cheng, Zhiqun;
Mao, Lingfeng;
Cai, Yong

Publication type:

Article

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 6, p. 1424, doi. 10.3390/electronics12061424

By:

Ding, Xiaoyu;
Yuan, Xu;
Ju, Tao;
Yu, Guohao;
Zhang, Bingliang;
Du, Zhongkai;
Zeng, Zhongming;
Zhang, Baoshun;
Zhang, Xinping

Publication type:

Article

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN x /SiON as Composite Gate Dielectric.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 6, p. 895, doi. 10.3390/electronics11060895

By:

Zhang, Xiaodong;
Wei, Xing;
Zhang, Peipei;
Zhang, Hui;
Zhang, Li;
Deng, Xuguang;
Fan, Yaming;
Yu, Guohao;
Dong, Zhihua;
Fu, Houqiang;
Cai, Yong;
Fu, Kai;
Zhang, Baoshun

Publication type:

Article

Analysis and Manufacturing of GaN Trench‐Gate MOSFETs with Thick Bottom Dielectric.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 8, p. 1, doi. 10.1002/pssa.202400804

By:

Hao, Chunfeng;
Zhou, Jiaan;
Yu, Guohao;
Ding, Liying;
Li, Yu;
Guo, Bohan;
Yang, An;
Xing, Runxian;
Liu, Bosen;
Yue, Huixin;
Jiang, Jinxia;
Huang, Rong;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Impact of Protective Layer Structures on High‐Temperature Annealing of GaN.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200505

By:

Wang, Zheming;
Deng, Xuguang;
Fu, Houqiang;
Zhang, Li;
Yu, Guohao;
Xu, Kun;
Yang, Feng;
Fan, Yaming;
Zhang, Baoshun

Publication type:

Article

Root identification in minirhizotron imagery with multiple instance learning.

Published in:

Machine Vision & Applications, 2020, v. 31, n. 6, p. 1, doi. 10.1007/s00138-020-01088-z

By:

Yu, Guohao;
Zare, Alina;
Sheng, Hudanyun;
Matamala, Roser;
Reyes-Cabrera, Joel;
Fritschi, Felix B.;
Juenger, Thomas E.

Publication type:

Article

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253

By:

Guo, Bohan;
Yu, Guohao;
Zhang, Li;
Zhou, Jiaan;
Wang, Zheming;
Xing, Runxian;
Yang, An;
Li, Yu;
Liu, Bosen;
Zeng, Xiaohong;
Du, Zhongkai;
Deng, Xuguang;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 620, doi. 10.3390/cryst13040620

By:

Yang, An;
Wei, Xing;
Shen, Wenchao;
Hu, Yu;
Chen, Tiwei;
Wang, Heng;
Zhou, Jiaan;
Xing, Runxian;
Zhang, Xiaodong;
Yu, Guohao;
Fan, Yaming;
Cai, Yong;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 8, p. 1, doi. 10.1002/pssa.202000666

By:

Sun, Chi;
Ding, Xiaoyu;
Wei, Xing;
Tang, Wenxin;
Zhang, Xiaodong;
Zhao, Desheng;
Li, Shuping;
Yu, Guohao;
Song, Liang;
Cai, Yong;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

GaN-based p-i-n X-ray detection.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 204, doi. 10.1002/pssa.201127446

By:

Yao, Changsheng;
Fu, Kai;
Wang, Guo;
Yu, Guohao;
Lu, Min

Publication type:

Article

Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400367

By:

Zhang, Yuxiang;
Dong, Zhihua;
Yu, Guohao;
Sun, Yingfei;
Li, Yu;
Lu, Shaoqian;
Yue, Huixin;
Jiang, Leifeng;
Zeng, Zongming;
Cai, Yong;
Zhang, Baoshun

Publication type:

Article

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 1, p. 1, doi. 10.1002/pssr.202400211

By:

Sun, Yingfei;
Yu, Guohao;
Li, Ang;
Lu, Shaoqian;
Li, Yu;
Zhang, Yuxiang;
Du, Zhongkai;
Zhang, Bingliang;
Huang, Zixuan;
Zhao, Desheng;
Zeng, Zhongming;
Zhang, Baoshun

Publication type:

Article

Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400075

By:

Zhou, Jiaan;
Yang, An;
Yu, Guohao;
Xing, Runxian;
Guo, Bohan;
Hao, Chunfeng;
Li, Yu;
Liu, Bosen;
Yue, Huixin;
Jiang, Jinxia;
Zhang, Li;
Deng, Xuguang;
Zeng, Zhongming;
Zhang, Baoshun;
Zhang, Xinping

Publication type:

Article

p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 4, p. 1, doi. 10.1002/pssr.202300301

By:

Shaoqian Lu;
Guohao Yu;
Yingfei Sun;
Xu Yuan;
Zhongkai Du;
Bingliang Zhang;
Lu Wang;
Yu Li;
Dongdong Wu;
Zengli Huang;
Zhongming Zeng;
Xulei Qin;
Baoshun Zhang

Publication type:

Article

X-ray detectors based on Fe doped GaN photoconductors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2011, v. 5, n. 5/6, p. 187, doi. 10.1002/pssr.201105163

By:

Fu, Kai;
Yu, Guohao;
Yao, Changsheng;
Wang, Guo;
Lu, Min;
Zhang, Guoguang

Publication type:

Article

Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency.

Published in:

Optical Engineering, 2023, v. 62, n. 6, p. 65108, doi. 10.1117/1.OE.62.6.065108

By:

Xing, Runxian;
Wang, Heng;
Zhou, Jiaan;
Yang, An;
Li, Yu;
Yu, Guohao;
Zeng, Zhongming;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04596-5

By:

Jiang, Guangyuan;
Liu, Yan;
Lin, Zhaojun;
Yu, Guohao;
Zhang, Baoshun;
Lv, Yuanjie;
Liu, Yang;
Zhou, Yan

Publication type:

Article

10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 13, p. 848, doi. 10.1049/el.2017.3981

By:

Ronghui Hao;
Dongdong Wu;
Kai Fu;
Liang Song;
Fu Chen;
Jie Zhao;
Zhongkai Du;
Bingliang Zhang;
Qilong Wang;
Guohao Yu;
Kai Cheng;
Yong Cai;
Xinping Zhang;
Baoshun Zhang

Publication type:

Article

10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 12, p. 848, doi. 10.1049/el.2017.3981

By:

Hao, Ronghui;
Wu, Dongdong;
Fu, Kai;
Song, Liang;
Chen, Fu;
Zhao, Jie;
Du, Zhongkai;
Zhang, Bingliang;
Wang, Qilong;
Yu, Guohao;
Cheng, Kai;
Cai, Yong;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018

By:

Zhili Zhang;
Guohao Yu;
Xiaodong Zhang;
Shuxin Tan;
Dongdong Wu;
Kai Fu;
Wei Huang;
Yong Cai;
Baoshun Zhang

Publication type:

Article

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si3N4 as gate insulator.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1201, doi. 10.1049/el.2015.1018

By:

Zhang, Zhili;
Yu, Guohao;
Zhang, Xiaodong;
Tan, Shuxin;
Wu, Dongdong;
Fu, Kai;
Huang, Wei;
Cai, Yong;
Zhang, Baoshun

Publication type:

Article

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 18, p. 1322, doi. 10.1049/el.2014.2020

By:

Shuang Liu;
Guohao Yu;
Kai Fu;
Shuxin Tan;
Zhili Zhang;
Chunhong Zeng;
Keyu Hou;
Wei Huang;
Yong Cai;
Baoshun Zhang;
Jinshe Yuan

Publication type:

Article

12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 17, p. 1322, doi. 10.1049/el.2014.2020

By:

Liu, Shuang;
Yu, Guohao;
Fu, Kai;
Tan, Shuxin;
Zhang, Zhili;
Zeng, Chunhong;
Hou, Keyu;
Huang, Wei;
Cai, Yong;
Zhang, Baoshun;
Yuan, Jinshe

Publication type:

Article

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 3, p. 20, doi. 10.1049/el.2012.3153

By:

Zhihua Dong;
Shuxin Tan;
Yong Cai;
Hongwei Chen;
Shenghou Liu;
Jicheng Xu;
Lu Xue;
Guohao Yu;
Yue Wang;
Desheng Zhao;
Keyu Hou;
Chen, Kevin J.;
Baoshun Zhang

Publication type:

Article

5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 1, p. 221, doi. 10.1049/el.2012.3153

By:

Dong, Zhihua;
Tan, Shuxin;
Cai, Yong;
Chen, Hongwei;
Liu, Shenghou;
Xu, Jicheng;
Xue, Lu;
Yu, Guohao;
Wang, Yue;
Zhao, Desheng;
Hou, Keyu;
Chen, Kevin J.;
Zhang, Baoshun

Publication type:

Article

Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate.

Published in:

Plasmonics, 2024, v. 19, n. 5, p. 2545, doi. 10.1007/s11468-024-02195-7

By:

Xing, Runxian;
Zhang, Ping;
Guo, Hongyang;
Yu, Guohao;
Zhou, Jiaan;
Yang, An;
Dai, Shige;
Zeng, Zhongming;
Zhang, Xingping;
Zhang, Baoshun

Publication type:

Article

Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies.

Published in:

Plasmonics, 2024, v. 19, n. 3, p. 1121, doi. 10.1007/s11468-023-02062-x

By:

Xing, Runxian;
Guo, Hongyang;
Yu, Guohao;
Zhou, Jiaan;
Yang, An;
Dai, Shige;
Zeng, Zhongming;
Zhang, Xingping;
Zhang, Baoshun

Publication type:

Article

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries.

Published in:

Frontiers of Optoelectronics, 2025, v. 18, n. 1, p. 1, doi. 10.1007/s12200-025-00148-4

By:

Xing, Runxian;
Guo, Hongyang;
Guo, Bohan;
Yu, Guohao;
Zhang, Ping;
Zhou, Jia'an;
Yang, An;
Li, Yu;
Hao, Chunfeng;
Yue, Huixin;
Zeng, Zhongming;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

γBMGC: A Comprehensive and Accurate Database for Screening TMAO-Associated Cardiovascular Diseases.

Published in:

Microorganisms, 2025, v. 13, n. 2, p. 225, doi. 10.3390/microorganisms13020225

By:

Yang, Guang;
Tao, Tiantian;
Yu, Guohao;
Zhang, Hongqian;
Wu, Yiwen;
Sun, Siqi;
Guo, Kexin;
Jia, Shulei

Publication type:

Article

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction.

Published in:

Nanophotonics (21928606), 2018, v. 7, n. 9, p. 1557, doi. 10.1515/nanoph-2018-0061

By:

He, Tao;
Zhao, Yukun;
Zhang, Xiaodong;
Lin, Wenkui;
Fu, Kai;
Sun, Chi;
Shi, Fengfeng;
Ding, Xiaoyu;
Yu, Guohao;
Zhang, Kai;
Lu, Shulong;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

In-Plane Radiation of Surface Plasmon Polaritons Excited by Free Electrons.

Published in:

Micromachines, 2024, v. 15, n. 6, p. 723, doi. 10.3390/mi15060723

By:

Zhang, Ping;
Dong, Yin;
Li, Xubo;
Cao, Xinxin;
Yang, Youfeng;
Yu, Guohao;
Yang, Shengpeng;
Wang, Shaomeng;
Gong, Yubin

Publication type:

Article

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer.

Published in:

Semiconductor Technology / Bandaoti Jishu, 2024, v. 45, n. 7, p. 1, doi. 10.1088/1674-4926/24010025

By:

Bosen Liu;
Guohao Yu;
Huimin Jia;
Jingyuan Zhu;
Jiaan Zhou;
Yu Li;
Bingliang Zhang;
Zhongkai Du;
Bohan Guo;
Lu Wang;
Qizhi Huang;
Leifeng Jiang;
Zhongming Zeng;
Zhipeng Wei;
Baoshun Zhang

Publication type:

Article

Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity.

Published in:

Advanced Optical Materials, 2019, v. 7, n. 7, p. N.PAG, doi. 10.1002/adom.201801563

By:

He, Tao;
Zhang, Xiaodong;
Ding, Xiaoyu;
Sun, Chi;
Zhao, Yukun;
Yu, Qiang;
Ning, Jiqiang;
Wang, Rongxin;
Yu, Guohao;
Lu, Shulong;
Zhang, Kai;
Zhang, Xinping;
Zhang, Baoshun

Publication type:

Article

Works by Yu, Guohao

Current Drops in CF 4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient.

p-GaN Selective Passivation via H Ion Implantation to Obtain a p-GaN Gate Normally off AlGaN/GaN HEMT.

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN x /SiON as Composite Gate Dielectric.

Analysis and Manufacturing of GaN Trench‐Gate MOSFETs with Thick Bottom Dielectric.

Impact of Protective Layer Structures on High‐Temperature Annealing of GaN.

Root identification in minirhizotron imagery with multiple instance learning.

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.

Highly Reliable Temperature Sensor Based on p-GaN/AlGaN/GaN Hybrid Anode Diode with Wide Operation Temperature from 73 K to 573 K.

Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method.

GaN-based p-i-n X-ray detection.

Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls.

Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N<sub>2</sub> Plasma and Postanneal‐Assisted Passivation.

Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.

p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors.

X-ray detectors based on Fe doped GaN photoconductors.

Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency.

The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.

10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current.

10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current.

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si<sub>3</sub>N<sub>4</sub> as gate insulator.

16.8 A/600 V AlGaN/GaN MIS‐HEMTs employing LPCVD‐Si<sub>3</sub>N<sub>4</sub> as gate insulator.

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis.

12.5 A/350 V AlGaN/GaN‐on‐Si MOS‐HEMT with low specific on‐resistance and minimal threshold hysteresis.

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.

5.3A/400V normally‐off AlGaN/GaN‐on‐Si MOS‐HEMT with high threshold voltage and large gate swing.

Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate.

Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies.

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries.

γBMGC: A Comprehensive and Accurate Database for Screening TMAO-Associated Cardiovascular Diseases.

Solar-blind ultraviolet photodetector based on graphene/vertical Ga<sub>2</sub>O<sub>3</sub> nanowire array heterojunction.

In-Plane Radiation of Surface Plasmon Polaritons Excited by Free Electrons.

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer.

Broadband Ultraviolet Photodetector Based on Vertical Ga<sub>2</sub>O<sub>3</sub>/GaN Nanowire Array with High Responsivity.