Found: 8
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Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF<sub>4</sub> plasma treatment.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1170, doi. 10.1002/pssa.201431737
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 14, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Pulse-Mode Dynamic R<sub>on</sub> Measurement of Large-Scale High-Power AlGaN/GaN HFET.
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- ETRI Journal, 2017, v. 39, n. 2, p. 292, doi. 10.4218/etrij.17.0116.0385
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- Article
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems.
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- ETRI Journal, 2017, v. 39, n. 1, p. 62, doi. 10.4218/etrij.17.0116.0173
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- Article
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems.
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- ETRI Journal, 2016, v. 38, n. 6, p. 1, doi. 10.4218/etrij.17.0116.0173
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- Article
Interactive and Cultural Differences in Online Newspapers.
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- CyberPsychology & Behavior, 2008, v. 11, n. 4, p. 505, doi. 10.1089/cpb.2007.0108
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- Article
K-band watt-level mHEMT power amplifier using quadruple-stacked transistors.
- Published in:
- Microwave & Optical Technology Letters, 2012, v. 54, n. 11, p. 2624, doi. 10.1002/mop.27140
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- Article