Works by Yoo, Geonwook
Results: 23
Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays.
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- Advanced Materials, 2014, v. 26, n. 19, p. 3019, doi. 10.1002/adma.201305684
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- Article
Front Cover Image.
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- InfoMat, 2023, v. 5, n. 10, p. 1, doi. 10.1002/inf2.12495
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- Article
Near‐sensor computing‐assisted simultaneous viral antigen and antibody detection via integrated label‐free biosensors with microfluidics.
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- InfoMat, 2023, v. 5, n. 10, p. 1, doi. 10.1002/inf2.12471
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- Article
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 494, doi. 10.3390/nano11020494
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- Article
Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-08323-9
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- Article
Design of p‐WSe<sub>2</sub>/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors.
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- Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202107992
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- Article
Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications.
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- Scientific Reports, 2017, p. 40893, doi. 10.1038/srep40893
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- Article
Flexible and Wavelength-Selective MoS<sub>2</sub> Phototransistors with Monolithically Integrated Transmission Color Filters.
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- Scientific Reports, 2017, p. 40945, doi. 10.1038/srep40945
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- Article
Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300303
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- Article
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.
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- Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406
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- Article
Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> Wrapped‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Field‐Effect Transistors for Dynamic Threshold Voltage Control.
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- Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100306
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- Article
Asymmetric Double‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.
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- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938
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- Article
Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir.
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- Advanced Optical Materials, 2022, v. 10, n. 19, p. 1, doi. 10.1002/adom.202200611
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- Article
CdSe/ZnS quantum dot encapsulated MoS<sub>2</sub> phototransistor for enhanced radiation hardness.
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- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-37902-y
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- Article
A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact.
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- Micromachines, 2024, v. 15, n. 1, p. 133, doi. 10.3390/mi15010133
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- Article
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric.
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- Micromachines, 2021, v. 12, n. 12, p. 1441, doi. 10.3390/mi12121441
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- Article
Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO 2 Interlayer for Improved Endurance and Leakage Current.
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- Electronics (2079-9292), 2024, v. 13, n. 22, p. 4515, doi. 10.3390/electronics13224515
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- Article
Effects of a Spike-Annealed HfO 2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors.
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- Electronics (2079-9292), 2024, v. 13, n. 14, p. 2783, doi. 10.3390/electronics13142783
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- Article
Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data.
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- Electronics (2079-9292), 2021, v. 10, n. 1, p. 49, doi. 10.3390/electronics10010049
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- Article
Erratum to: Real-time electrical detection of epidermal skin MoS biosensor for point-of-care diagnostics.
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- 2017
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- Erratum
Real-time electrical detection of epidermal skin MoS biosensor for point-of-care diagnostics.
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- Nano Research, 2017, v. 10, n. 3, p. 767, doi. 10.1007/s12274-016-1289-1
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- Article
A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200596
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- Article
Solution-processed high- k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS<sub>2</sub> FETs.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 1, p. n/a, doi. 10.1002/pssa.201600619
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- Article