Works by Yoo, Geonwook

Results: 23

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406

By:

Yang, Jeong Yong;
Yeom, Min Jae;
Lee, Jaeyong;
Lee, Kyusang;
Park, Changkun;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100306

By:

Yang, Jeong Yong;
Yeom, Min Jae;
Park, Youngseo;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938

By:

Ma, Jiyeon;
Cho, Hyung Jun;
Heo, Junseok;
Kim, Sunkook;
Yoo, Geonwook

Publication type:

Article

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-08323-9

By:

Xing, Zhang;
Akter, Afroja;
Kum, Hyun S.;
Baek, Yongmin;
Ra, Yong-Ho;
Yoo, Geonwook;
Lee, Kyusang;
Mi, Zetian;
Heo, Junseok

Publication type:

Article

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200596

By:

Jeong, Yeong Je;
Lee, Chan Ho;
Yeom, Min Jae;
Yang, Jeong Yong;
Yoo, Geonwook

Publication type:

Article

Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications.

Published in:

Scientific Reports, 2017, p. 40893, doi. 10.1038/srep40893

By:

Kum, Hyun;
Seong, Han-Kyu;
Lim, Wantae;
Chun, Daemyung;
Kim, Young-il;
Park, Youngsoo;
Yoo, Geonwook

Publication type:

Article

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters.

Published in:

Scientific Reports, 2017, p. 40945, doi. 10.1038/srep40945

By:

Yoo, Geonwook;
Choi, Sol Lea;
Park, Sang Jin;
Lee, Kyu-Tae;
Lee, Sanghyun;
Oh, Min Suk;
Heo, Junseok;
Park, Hui Joon

Publication type:

Article

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 494, doi. 10.3390/nano11020494

By:

Park, Youngseo;
Ma, Jiyeon;
Yoo, Geonwook;
Heo, Junseok

Publication type:

Article

Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays.

Published in:

Advanced Materials, 2014, v. 26, n. 19, p. 3019, doi. 10.1002/adma.201305684

By:

Tchoe, Youngbin;
Jo, Janghyun;
Kim, Miyoung;
Heo, Jaehyuk;
Yoo, Geonwook;
Sone, Cheolsoo;
Yi, Gyu-Chul

Publication type:

Article

Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO 2 Interlayer for Improved Endurance and Leakage Current.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 22, p. 4515, doi. 10.3390/electronics13224515

By:

Joo, Hyeong Jun;
Yoon, Si Sung;
Oh, Seung Yoon;
Lim, Yoojin;
Lee, Gyu Hyung;
Yoo, Geonwook

Publication type:

Article

Effects of a Spike-Annealed HfO 2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 14, p. 2783, doi. 10.3390/electronics13142783

By:

Lee, Gyuhyung;
Yang, Jeongyong;
Yeom, Min Jae;
Yoon, Sisung;
Yoo, Geonwook

Publication type:

Article

Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 1, p. 49, doi. 10.3390/electronics10010049

By:

Kim, Bobae;
Im, Sungbin;
Yoo, Geonwook

Publication type:

Article

Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir.

Published in:

Advanced Optical Materials, 2022, v. 10, n. 19, p. 1, doi. 10.1002/adom.202200611

By:

Lee, Chan Ho;
Park, Youngseo;
Kim, Sungkyu;
Jeong, Yeong Je;
Ahn, Yeong Hwan;
Kim, Young Chul;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact.

Published in:

Micromachines, 2024, v. 15, n. 1, p. 133, doi. 10.3390/mi15010133

By:

Oh, Seung Yoon;
Jeong, Yeong Je;
Kang, Inho;
Park, Ji-Hyeon;
Yeom, Min Jae;
Jeon, Dae-Woo;
Yoo, Geonwook

Publication type:

Article

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric.

Published in:

Micromachines, 2021, v. 12, n. 12, p. 1441, doi. 10.3390/mi12121441

By:

Yeom, Min Jae;
Yang, Jeong Yong;
Lee, Chan Ho;
Heo, Junseok;
Chung, Roy Byung Kyu;
Yoo, Geonwook

Publication type:

Article

Front Cover Image.

Published in:

InfoMat, 2023, v. 5, n. 10, p. 1, doi. 10.1002/inf2.12495

By:

Bae, Byungjoon;
Baek, Yongmin;
Yang, Jeongyong;
Lee, Heesung;
Sonnadara, Charana S. S.;
Jung, Sangeun;
Park, Minseong;
Lee, Doeon;
Kim, Sihwan;
Giri, Gaurav;
Shah, Sahil;
Yoo, Geonwook;
Petri, William A.;
Lee, Kyusang

Publication type:

Article

Near‐sensor computing‐assisted simultaneous viral antigen and antibody detection via integrated label‐free biosensors with microfluidics.

Published in:

InfoMat, 2023, v. 5, n. 10, p. 1, doi. 10.1002/inf2.12471

By:

Bae, Byungjoon;
Baek, Yongmin;
Yang, Jeongyong;
Lee, Heesung;
Sonnadara, Charana S. S.;
Jung, Sangeun;
Park, Minseong;
Lee, Doeon;
Kim, Sihwan;
Giri, Gaurav;
Shah, Sahil;
Yoo, Geonwook;
Petri, William A.;
Lee, Kyusang

Publication type:

Article

CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness.

Published in:

Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-37902-y

By:

Park, Jinwu;
Yoo, Geonwook;
Heo, Junseok

Publication type:

Article

Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202107992

By:

Lee, Chan Ho;
Park, Youngseo;
Youn, Sukhyeong;
Yeom, Min Jae;
Kum, Hyun S.;
Chang, Jiwon;
Heo, Junseok;
Yoo, Geonwook

Publication type:

Article

Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300303

By:

Baek, Yongmin;
Bae, Byungjoon;
Yang, Jeongyong;
Lee, Doeon;
Lee, Hee Sung;
Park, Minseong;
Kim, Taegeon;
Kim, Sihwan;
Park, Bo‐In;
Yoo, Geonwook;
Lee, Kyusang

Publication type:

Article

Erratum to: Real-time electrical detection of epidermal skin MoS biosensor for point-of-care diagnostics.

Published in:

2017

By:

Yoo, Geonwook;
Park, Heekyeong;
Kim, Minjung;
Song, Won;
Jeong, Seokhwan;
Kim, Min;
Lee, Hyungbeen;
Lee, Sang;
Hong, Young;
Lee, Min;
Lee, Sungho;
Kim, Sunkook

Publication type:

Erratum

Real-time electrical detection of epidermal skin MoS biosensor for point-of-care diagnostics.

Published in:

Nano Research, 2017, v. 10, n. 3, p. 767, doi. 10.1007/s12274-016-1289-1

By:

Yoo, Geonwook;
Park, Heekyeong;
Kim, Minjung;
Song, Won;
Jeong, Seokhwan;
Kim, Min;
Lee, Hyungbeen;
Lee, Sang;
Hong, Young;
Lee, Min;
Lee, Sungho;
Kim, Sunkook

Publication type:

Article

Solution-processed high- k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS2 FETs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 1, p. n/a, doi. 10.1002/pssa.201600619

By:

Yoo, Geonwook;
Choi, Sol Lea;
Yoo, Byungwook;
Oh, Min Suk

Publication type:

Article

Works by Yoo, Geonwook

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.

Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> Wrapped‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Field‐Effect Transistors for Dynamic Threshold Voltage Control.

Asymmetric Double‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors.

Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications.

Flexible and Wavelength-Selective MoS<sub>2</sub> Phototransistors with Monolithically Integrated Transmission Color Filters.

Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β -Ga 2 O 3 Field-Effect Transistors.

Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays.

Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO 2 Interlayer for Improved Endurance and Leakage Current.

Effects of a Spike-Annealed HfO 2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors.

Performance Evaluation of CNN-Based End-Point Detection Using In-Situ Plasma Etching Data.

Vertically Stacked vdW Double Heterojunction Photodiode with Ultrawide Bandgap Gallium Oxide Electron Reservoir.

A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact.

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric.

Front Cover Image.

Near‐sensor computing‐assisted simultaneous viral antigen and antibody detection via integrated label‐free biosensors with microfluidics.

CdSe/ZnS quantum dot encapsulated MoS<sub>2</sub> phototransistor for enhanced radiation hardness.

Design of p‐WSe<sub>2</sub>/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors.

Quantized Neural Network via Synaptic Segregation Based on Ternary Charge‐Trap Transistors.

Erratum to: Real-time electrical detection of epidermal skin MoS biosensor for point-of-care diagnostics.

Real-time electrical detection of epidermal skin MoS biosensor for point-of-care diagnostics.

Solution-processed high- k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS<sub>2</sub> FETs.