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Atomic Layer Deposition of Sb<sub>2</sub>Te<sub>3</sub>/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory.
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- Advanced Materials, 2022, v. 34, n. 50, p. 1, doi. 10.1002/adma.202207143
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- Article
Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory.
- Published in:
- Micromachines, 2019, v. 10, n. 5, p. 281, doi. 10.3390/mi10050281
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- Article
Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals.
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- Micromachines, 2019, v. 10, n. 5, p. 306, doi. 10.3390/mi10050306
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- Article
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800436
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- Article