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Cascade theory of electron capture in quantum wells.
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- Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 4, p. 806, doi. 10.1134/S1063776108040213
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- Article
Resonant Acceptor States in Uniaxially Strained Semiconductors.
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- Journal of Experimental & Theoretical Physics, 2002, v. 94, n. 3, p. 593, doi. 10.1134/1.1469158
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- Article
Effect of a Magnetic Field on Thermally Stimulated Ionization of Impurity Centers in Semiconductors by Submillimeter Radiation.
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- Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 1, p. 217, doi. 10.1134/1.559077
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- Article
Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium.
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- Journal of Experimental & Theoretical Physics, 1999, v. 88, n. 1, p. 51, doi. 10.1134/1.558763
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- Article
Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.
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- Semiconductors, 2020, v. 54, n. 2, p. 181, doi. 10.1134/S1063782620020207
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- Article
Simulation of Electron and Hole States in Si Nanocrystals in a SiO<sub>2</sub> Matrix: Choice of Parameters of the Empirical Tight-Binding Method.
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- Semiconductors, 2018, v. 52, n. 10, p. 1264, doi. 10.1134/S1063782618100020
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- Article
Impact of resonance-state scattering on the kinetics of two-dimensional electrons.
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- Semiconductors, 2010, v. 44, n. 2, p. 198, doi. 10.1134/S1063782610020119
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- Article
Direct bandgap optical transitions in Si nanocrystals.
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- JETP Letters, 2010, v. 90, n. 12, p. 758, doi. 10.1134/S0021364009240059
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- Article
Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment.
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- JETP Letters, 2010, v. 90, n. 10, p. 683, doi. 10.1134/S002136400922010X
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- Article
Impurity resonance states in semiconductors.
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- Semiconductors, 2008, v. 42, n. 8, p. 880, doi. 10.1134/S1063782608080034
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- Article
Excitation of Er<sup>3+</sup> ions in SiO<sub>2</sub> with Si nanocrystals.
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- Semiconductors, 2008, v. 42, n. 8, p. 971, doi. 10.1134/S1063782608080162
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- Article
Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.
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- Semiconductors, 2007, v. 41, n. 9, p. 1092, doi. 10.1134/S106378260709014X
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- Article
Electric-field effect on the spin-dependent resonance tunneling.
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- Semiconductors, 2006, v. 40, n. 12, p. 1402, doi. 10.1134/S1063782606120062
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- Article
The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering.
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- Semiconductors, 2001, v. 35, n. 5, p. 565
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- Article
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon.
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- Semiconductors, 1999, v. 33, n. 6, p. 622, doi. 10.1134/1.1187741
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- Article
Resonance acceptor states in uniaxially strained semiconductors.
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- Semiconductors, 1997, v. 31, n. 10, p. 1014, doi. 10.1134/1.1187016
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- Article
TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 279, doi. 10.1142/S0219581X07004729
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- Article
Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence.
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- Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2150, doi. 10.1002/pssb.201600525
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- Article
Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 192, doi. 10.1002/pssb.200672548
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- Article
Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.
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- Physica Status Solidi (B), 1999, v. 211, n. 1, p. 495, doi. 10.1002/(SICI)1521-3951(199901)211:1<495::AID-PSSB495>3.0.CO;2-8
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- Article
Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 35, doi. 10.1002/pssb.2221980105
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- Article
Lattice deformation in silicon and germanium nanocrystals.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 11, p. 2879, doi. 10.1002/pssa.201600372
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- Article
RADIATION SPECTRUM OF HOT EXCITONS IN Si NANOCRYSTALS.
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- Lithuanian Journal of Physics, 2015, v. 55, n. 4, p. 292
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- Article
Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity.
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- JETP Letters, 2006, v. 83, n. 8, p. 351, doi. 10.1134/S002136400608011X
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- Article
Terahertz Electroluminescence under Conditions of Shallow Acceptor Breakdown in Germanium.
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- JETP Letters, 2004, v. 79, n. 8, p. 365, doi. 10.1134/1.1772432
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- Article
Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors.
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- JETP Letters, 1998, v. 68, n. 10, p. 804
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- Article
The effect of phonon heating on photoelectric phenomena.
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- Physica Status Solidi (B), 1970, v. 42, n. 1, p. 415, doi. 10.1002/pssb.19700420142
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- Article
Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals.
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- Nature Nanotechnology, 2010, v. 5, n. 12, p. 878, doi. 10.1038/nnano.2010.236
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- Article
Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications.
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- Nature Photonics, 2008, v. 2, n. 2, p. 105, doi. 10.1038/nphoton.2007.279
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- Article
Electron Confinement Due to Reflection from the Interface in Heterojunctions.
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- Physica Status Solidi (B), 1991, v. 165, n. 1, p. K9, doi. 10.1002/pssb.2221650130
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Impact ionization in A<sup>III</sup>B<sup>V</sup> semiconductors in high electric fields.
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- Physica Status Solidi (B), 1987, v. 140, n. 1, p. 9, doi. 10.1002/pssb.2221400102
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Auger Recombination of Electrons via Deep and Shallow Acceptors.
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- Physica Status Solidi (B), 1985, v. 132, n. 1, p. 203, doi. 10.1002/pssb.2221320121
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- Article
Tunneling from Deep Levels of l-c Type in Electric Fields.
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- Physica Status Solidi (B), 1985, v. 127, n. 1, p. 339, doi. 10.1002/pssb.2221270134
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- Article
High Energy Distribution Function in an Electric Field and Electron Impact Ionization in A<sup>III</sup>B<sup>V</sup> Semiconductors.
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- Physica Status Solidi (B), 1982, v. 113, n. 1, p. 125, doi. 10.1002/pssb.2221130112
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- Article
The Effect of Phonon Heating on Photoelectric Phenomena (II).
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- Physica Status Solidi (B), 1972, v. 51, n. 1, p. 161, doi. 10.1002/pssb.2220510117
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- Article