Room Temperature NUV‐To‐NIR Up‐ and Down‐Conversion Photoluminescence in Erbium‐Doped GaAs.
- Published in:
- Advanced Optical Materials, 2024, v. 12, n. 4, p. 1, doi. 10.1002/adom.202301616
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- Publication type:
- Article
Works by Yao, Jinshan
Results: 4
1
2
Epitaxial Growth of GaAs on Si (111) Controlled by Al/AlAs Interlayer.
- Published in:
- Journal of Synthetic Crystals, 2022, v. 51, n. 11, p. 1815
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- Publication type:
- Article
3
Thermal Stability Enhancement in Epitaxial Alpha Tin Films by Strain Engineering.
- Published in:
- Advanced Engineering Materials, 2019, v. 21, n. 10, p. N.PAG, doi. 10.1002/adem.201900410
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- Publication type:
- Article
4
Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-022-26368-8
- By:
- Publication type:
- Article