Works by Yang, Tieying

Results: 12

Enhanced Stability of CH3NH3PbI3 Thin Films Deposited on FTZO.

Published in:

Chemistry Letters, 2016, v. 45, n. 7, p. 819, doi. 10.1246/cl.160281

By:

Wenlong Jiang;
Tieying Yang;
Yanmin Gao;
Xingyu Gao

Publication type:

Article

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition.

Published in:

Nano-Micro Letters, 2018, v. 10, n. 2, p. 1, doi. 10.1007/s40820-017-0173-1

By:

Tai, Lixuan;
Zhu, Daming;
Liu, Xing;
Yang, Tieying;
Wang, Lei;
Wang, Rui;
Jiang, Sheng;
Chen, Zhenhua;
Xu, Zhongmin;
Li, Xiaolong

Publication type:

Article

Chemical ordering suppresses large-scale electronic phase separation in doped manganites.

Published in:

Nature Communications, 2016, v. 7, n. 4, p. 11260, doi. 10.1038/ncomms11260

By:

Zhu, Yinyan;
Du, Kai;
Niu, Jiebin;
Lin, Lingfang;
Wei, Wengang;
Liu, Hao;
Lin, Hanxuan;
Zhang, Kai;
Yang, Tieying;
Kou, Yunfang;
Shao, Jian;
Gao, Xingyu;
Xu, Xiaoshan;
Wu, Xiaoshan;
Dong, Shuai;
Yin, Lifeng;
Shen, Jian

Publication type:

Article

Data acquisition in powder X-ray diffraction measurements using an area detector.

Published in:

Instrumentation Science & Technology, 2024, v. 52, n. 5, p. 597, doi. 10.1080/10739149.2023.2297087

By:

Zheng, Xu;
Yin, Guangzhi;
Qiu, Zhiyong;
Yang, Tieying;
Gao, Xingyu;
Gu, Yueliang;
Zhang, Xingmin;
Li, Xiaolong

Publication type:

Article

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100612

By:

Huang, Qicheng;
Fan, Zhen;
Rao, Jingjing;
Yang, Tieying;
Zhang, Xingmin;
Chen, Deyang;
Qin, Minghui;
Zeng, Min;
Lu, Xubing;
Zhou, Guofu;
Gao, Xingsen;
Liu, Jun‐Ming

Publication type:

Article

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium (Adv. Funct. Mater. 4/2025).

Published in:

Advanced Functional Materials, 2025, v. 35, n. 4, p. 1, doi. 10.1002/adfm.202570020

By:

Sun, Yuting;
Li, Bowen;
Yang, Tieying;
Yang, Qun;
Yu, Haibin;
Gotoh, Tamihiro;
Shi, Chenyi;
Shen, Jiabin;
Zhou, Peng;
Elliott, Stephen R.;
Li, Huanglong;
Song, Zhitang;
Zhu, Min

Publication type:

Article

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 4, p. 1, doi. 10.1002/adfm.202408725

By:

Sun, Yuting;
Li, Bowen;
Yang, Tieying;
Yang, Qun;
Yu, Haibin;
Gotoh, Tamihiro;
Shi, Chenyi;
Shen, Jiabin;
Zhou, Peng;
Elliott, Stephen R.;
Li, Huanglong;
Song, Zhitang;
Zhu, Min

Publication type:

Article

Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity.

Published in:

Advanced Materials, 2015, v. 27, n. 12, p. 2113, doi. 10.1002/adma.201405378

By:

Chen, Hongliang;
Dong, Shaohua;
Bai, Meilin;
Cheng, Nongyi;
Wang, Hao;
Li, Mingliang;
Du, Huiwen;
Hu, Shuxin;
Yang, Yanlian;
Yang, Tieying;
Zhang, Fan;
Gu, Lin;
Meng, Sheng;
Hou, Shimin;
Guo, Xuefeng

Publication type:

Article

Organic Field-Effect Transistors: Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity (Adv. Mater. 12/2015).

Published in:

Advanced Materials, 2015, v. 27, n. 12, p. 2124, doi. 10.1002/adma.201570085

By:

Chen, Hongliang;
Dong, Shaohua;
Bai, Meilin;
Cheng, Nongyi;
Wang, Hao;
Li, Mingliang;
Du, Huiwen;
Hu, Shuxin;
Yang, Yanlian;
Yang, Tieying;
Zhang, Fan;
Gu, Lin;
Meng, Sheng;
Hou, Shimin;
Guo, Xuefeng

Publication type:

Article

Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability.

Published in:

Advanced Materials, 2012, v. 24, n. 41, p. 5576, doi. 10.1002/adma.201202099

By:

Dong, Shaohua;
Zhang, Hongtao;
Yang, Liu;
Bai, Meilin;
Yao, Yuan;
Chen, Hongliang;
Gan, Lin;
Yang, Tieying;
Jiang, Hong;
Hou, Shimin;
Wan, Lijun;
Guo, Xuefeng

Publication type:

Article

Organic Semiconductors: Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability (Adv. Mater. 41/2012).

Published in:

Advanced Materials, 2012, v. 24, n. 41, p. 5518, doi. 10.1002/adma.201290255

By:

Dong, Shaohua;
Zhang, Hongtao;
Yang, Liu;
Bai, Meilin;
Yao, Yuan;
Chen, Hongliang;
Gan, Lin;
Yang, Tieying;
Jiang, Hong;
Hou, Shimin;
Wan, Lijun;
Guo, Xuefeng

Publication type:

Article

Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition.

Published in:

Scientific Reports, 2016, p. 23119, doi. 10.1038/srep23119

By:

Yang, Mengmeng;
Yang, Yuanjun;
Bin Hong;
Wang, Liangxin;
Hu, Kai;
Dong, Yongqi;
Xu, Han;
Huang, Haoliang;
Zhao, Jiangtao;
Chen, Haiping;
Song, Li;
Ju, Huanxin;
Zhu, Junfa;
Bao, Jun;
Li, Xiaoguang;
Gu, Yueliang;
Yang, Tieying;
Gao, Xingyu;
Luo, Zhenlin;
Gao, Chen

Publication type:

Article

Works by Yang, Tieying

Enhanced Stability of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Thin Films Deposited on FTZO.

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition.

Chemical ordering suppresses large-scale electronic phase separation in doped manganites.

Data acquisition in powder X-ray diffraction measurements using an area detector.

Significant Modulation of Ferroelectric Photovoltaic Behavior by a Giant Macroscopic Flexoelectric Effect Induced by Strain‐Relaxed Epitaxy.

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium (Adv. Funct. Mater. 4/2025).

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium.

Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity.

Organic Field-Effect Transistors: Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity (Adv. Mater. 12/2015).

Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability.

Organic Semiconductors: Solution-Crystallized Organic Semiconductors with High Carrier Mobility and Air Stability (Adv. Mater. 41/2012).

Suppression of Structural Phase Transition in VO<sub>2</sub> by Epitaxial Strain in Vicinity of Metal-insulator Transition.