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Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 14, p. 1, doi. 10.1002/adfm.202214142
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- Article
Layered (C<sub>6</sub>H<sub>5</sub>CH<sub>2</sub>NH<sub>3</sub>)<sub>2</sub>CuBr<sub>4</sub> Perovskite for Multilevel Storage Resistive Switching Memory.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 27, p. 1, doi. 10.1002/adfm.202002653
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- Article
Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural Networks.
- Published in:
- Advanced Science, 2022, v. 9, n. 14, p. 1, doi. 10.1002/advs.202200168
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- Article
1D Hexagonal HC(NH<sub>2</sub>)<sub>2</sub>PbI<sub>3</sub> for Multilevel Resistive Switching Nonvolatile Memory.
- Published in:
- Advanced Electronic Materials, 2018, v. 4, n. 9, p. 1, doi. 10.1002/aelm.201800190
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- Article