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Radiative Recombination in the Cu(In,Ga)Se<sub>2</sub> Thin Films Irradiated with Hydrogen Ions.
- Published in:
- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400337
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- Article
Optical Transmission and Reflection of Nanostructured Cu(In,Ga)Se<sub>2</sub> Thin Films Irradiated with Hydrogen Ions.
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- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400271
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- Article
Wet Chemical Methods of HgCdTe Surface Treatment.
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- Journal of Structural Chemistry, 2023, v. 64, n. 3, p. 519, doi. 10.1134/S0022476623030150
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- Article
Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 395, doi. 10.1007/s13204-021-01704-y
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- Article
Admittance of barrier nanostructures based on MBE HgCdTe.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
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- Article
Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4971, doi. 10.1007/s13204-020-01327-9
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- Article
TEM studies of structural defects in HgTe/HgCdTe quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2867, doi. 10.1007/s13204-019-01142-x
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- Article
Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 725, doi. 10.1007/s13204-018-0679-y
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- Article
A new design of scanning IR detectors.
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- Opto-Electronics Review, 2020, v. 28, n. 2, p. 93, doi. 10.24425/opelre.2020.132505
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- Article
Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric.
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- Russian Physics Journal, 2010, v. 53, n. 2, p. 148, doi. 10.1007/s11182-010-9399-9
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- Article
Diffusion effects at the Au/p-CuInSe<sub>2</sub> contact studied by XPS.
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- Crystal Research & Technology, 2003, v. 38, n. 7/8, p. 676
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- Article
Modification of the CuInSe.
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- Crystal Research & Technology, 1997, v. 32, n. 1, p. 155, doi. 10.1002/crat.2170320116
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- Article
XPS Analysis of Bridgman-grown CuInTe.
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- Crystal Research & Technology, 1996, v. 31, n. 1, p. 75, doi. 10.1002/crat.2170310114
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- Article
Optical Investigation of Defects in p-type CuInSe.
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- Crystal Research & Technology, 1996, v. 31, n. 1, p. 63, doi. 10.1002/crat.2170310113
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- Article
Photoacoustic Spectroscopy of Defect States in Etched and Air-annealed CuInSe.
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- Crystal Research & Technology, 1995, v. 30, n. 4, p. 517, doi. 10.1002/crat.2170300417
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- Article
Ion channeling study of defects in CuInTe.
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- Crystal Research & Technology, 1995, v. 30, n. 1, p. 121, doi. 10.1002/crat.2170300119
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- Article
Comparative optical absorption and photoreflectance study of n-type CuInSe.
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- Crystal Research & Technology, 1994, v. 29, n. 5, p. 719, doi. 10.1002/crat.2170290527
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- Article
Effect of plasma hydrogenation on the defect properties of CuInSe.
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- Crystal Research & Technology, 1994, v. 29, n. 3, p. 427, doi. 10.1002/crat.2170290329
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- Article
Influence of proton implantation on the properties of CuInSe.
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- Crystal Research & Technology, 1994, v. 29, n. 3, p. 417, doi. 10.1002/crat.2170290328
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- Article
Influence of proton implantation on the properties of CuInSe.
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- Crystal Research & Technology, 1994, v. 29, n. 1, p. 125, doi. 10.1002/crat.2170290127
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- Article
Electrical Properties of CuInSe.
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- Crystal Research & Technology, 1993, v. 28, n. 2, p. 267, doi. 10.1002/crat.2170280221
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- Article
The Effect of a Surface Layer on Determination of the Dielectric Functions of ZnTe Films by the Ellipsometric Technique.
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- Optics & Spectroscopy, 2002, v. 92, n. 5, p. 780, doi. 10.1134/1.1481146
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- Article
Photoluminescence Spectra of the AgGaTe[sub 2] Single Crystals Doped with Hydrogen.
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- Optics & Spectroscopy, 2000, v. 88, n. 3, p. 377
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- Article
Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
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- Journal of Communications Technology & Electronics, 2023, v. 68, p. S132, doi. 10.1134/S1064226923140176
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- Article
Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1036, doi. 10.1134/S1064226923090279
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- Article
Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 3, p. 334, doi. 10.1134/S1064226923030208
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- Article
Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 3, p. 308, doi. 10.1134/S1064226922030172
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- Article
Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers.
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- Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 337, doi. 10.1134/S1064226921030219
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- Article
HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 3, p. 316, doi. 10.1134/S1064226920030122
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- Article
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1024, doi. 10.1134/S1064226919090171
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- Article
A Megapixel Matrix Photodetector of the Middle Infrared Range.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1011, doi. 10.1134/S1064226919090043
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- Article
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 3, p. 289, doi. 10.1134/S1064226919030197
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- Article
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown <italic>n</italic>-Hg<sub>1 - <italic>x</italic></sub>Cd<sub><italic>x</italic></sub>Te (<italic>x</italic> = 0.22-0.23) with the Al<sub>2</sub>O<sub>3</sub> Insulator.
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- Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 281, doi. 10.1134/S106422691803021X
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- Article
Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures.
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- Semiconductors, 2024, v. 58, n. 5, p. 422, doi. 10.1134/S1063782624050087
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- Article
Photoluminescence of Arsenic Doped Epitaxial Films of Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te.
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- Semiconductors, 2024, v. 58, n. 4, p. 345, doi. 10.1134/S1063782624040122
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- Article
Photoluminescence of Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te and Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te Epitaxial Films.
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- Semiconductors, 2024, v. 58, n. 2, p. 176, doi. 10.1134/S1063782624020143
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- Article
In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride.
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- Semiconductors, 2024, v. 58, n. 1, p. 67, doi. 10.1134/S1063782624010147
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- Article
Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films.
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- Semiconductors, 2021, v. 55, n. 2, p. 168, doi. 10.1134/S1063782621020093
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- Article
Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content.
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- Semiconductors, 2020, v. 54, n. 12, p. 1561, doi. 10.1134/S1063782620120258
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- Article
Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells.
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- Semiconductors, 2020, v. 54, n. 10, p. 1247, doi. 10.1134/S1063782620100310
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- Article
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe.
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- Semiconductors, 2019, v. 53, n. 1, p. 132, doi. 10.1134/S1063782619010196
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- Article
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se<sub>2</sub> Films Deposited by Magnetron-Assisted Sputtering.
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- Semiconductors, 2018, v. 52, n. 10, p. 1238, doi. 10.1134/S1063782618100196
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- Article
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures.
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- Semiconductors, 2016, v. 50, n. 12, p. 1626, doi. 10.1134/S1063782616120265
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- Article
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2016, v. 50, n. 2, p. 208, doi. 10.1134/S1063782616020160
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- Article
CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range.
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- Semiconductors, 2014, v. 48, n. 6, p. 767, doi. 10.1134/S1063782614060268
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- Article
Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment.
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- Semiconductors, 2014, v. 48, n. 2, p. 195, doi. 10.1134/S1063782614020134
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- Article
Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2012, v. 46, n. 10, p. 1341, doi. 10.1134/S1063782612100065
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- Article
Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector.
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- Semiconductors, 2012, v. 46, n. 4, p. 535, doi. 10.1134/S1063782612040197
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- Article
Photoluminescence of HgCdTe based heterostructures grown by molecular-beam epitaxy.
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- Semiconductors, 2011, v. 45, n. 7, p. 872, doi. 10.1134/S1063782611070153
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- Article
Defects in the crystal structure of CdHgTe layers grown on the Si (310) substrates.
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- Semiconductors, 2011, v. 45, n. 7, p. 926, doi. 10.1134/S1063782611070232
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- Article