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Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile.
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- Semiconductors, 2019, v. 53, n. 2, p. 268, doi. 10.1134/S1063782619020076
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Specific Features of the Electrochemical Capacitance-Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions.
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- Semiconductors, 2018, v. 52, n. 8, p. 1004, doi. 10.1134/S1063782618080250
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- Article
Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.
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- Technical Physics Letters, 2023, v. 49, p. S163, doi. 10.1134/S1063785023900649
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- Article
Through Concentration Profiling of Heterojunction Solar Cells.
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- Technical Physics Letters, 2019, v. 45, n. 9, p. 890, doi. 10.1134/S106378501909013X
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- Article