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Verbal fluency of patients with paranoid schizophrenia, first grade schizophrenia relatives and healthy controls - comparative study.
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- European Psychiatry, 2020, v. 63, p. S23
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- Article
Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 524, doi. 10.1134/S1063785007060235
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- Article
Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene.
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- Scientific Reports, 2016, p. 30296, doi. 10.1038/srep30296
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- Article
Investigation of Residual Oxide Layers on GaAs Surfaces.
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- Crystal Research & Technology, 1992, v. 27, n. 6, p. 809, doi. 10.1002/crat.2170270612
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- Article
Positron annihilation in GaAs.
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- Crystal Research & Technology, 1988, v. 23, n. 3, p. 405, doi. 10.1002/crat.2170230322
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- Article
Structural and electrical characteristics of iodidely synthesized Pb.
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- Crystal Research & Technology, 1984, v. 19, n. 11, p. K109, doi. 10.1002/crat.2170191129
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- Article
On the scandium distribution in indium arsenide crystals grown by the Czochralski method.
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- Crystal Research & Technology, 1983, v. 18, n. 11, p. 1385, doi. 10.1002/crat.2170181113
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- Article
Magnetic quantum ratchet effect in graphene.
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- Nature Nanotechnology, 2013, v. 8, n. 2, p. 104, doi. 10.1038/nnano.2012.231
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- Article
Exploring NiO nanosize structures for ammonia sensing.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 11870, doi. 10.1007/s10854-018-9287-6
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- Article
A study of thick 3 C-SiC epitaxial layers grown on 6 H-SiC substrates by sublimation epitaxy in vacuum.
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- Semiconductors, 2007, v. 41, n. 3, p. 263, doi. 10.1134/S1063782607030037
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- Article
Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry.
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- Semiconductors, 2005, v. 39, n. 12, p. 1394, doi. 10.1134/1.2140311
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- Article
The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry.
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- Semiconductors, 2005, v. 39, n. 12, p. 1420, doi. 10.1134/1.2140317
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- Article
Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons.
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- Semiconductors, 2004, v. 38, n. 7, p. 807, doi. 10.1134/1.1777605
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- Article
A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum.
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- Semiconductors, 2004, v. 38, n. 2, p. 150, doi. 10.1134/1.1648365
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- Article
Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation.
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- Semiconductors, 2003, v. 37, n. 1, p. 65, doi. 10.1134/1.1538541
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- Article
Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide).
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- Semiconductors, 2002, v. 36, n. 11, p. 1270, doi. 10.1134/1.1521229
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- Article
Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum.
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- Semiconductors, 2000, v. 34, n. 10, p. 1133, doi. 10.1134/1.1317570
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- Article
Graphene integration with nitride semiconductors for high power and high frequency electronics.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600460
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- Article
Voltage- and Frequency-Dependent Electrical Characteristics and Interface State Density of Ni/ZnO Schottky Diodes.
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- Acta Physica Polonica: A, 2022, v. 141, n. 2, p. 99, doi. 10.12693/APhysPolA.141.99
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- Article
Microscopic lateral overgrowth by physical vapour transport of GaN on selforganized diamondlike carbon masks.
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- Crystal Research & Technology, 2009, v. 44, n. 10, p. 1078, doi. 10.1002/crat.200900526
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- Article
Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications.
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- Crystal Research & Technology, 2005, v. 40, n. 10/11, p. 964
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- Article
Microhardness of 6H-SiC Epitaxial Layers Grown by Sublimation.
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- Crystal Research & Technology, 1999, v. 34, n. 8, p. 943, doi. 10.1002/(SICI)1521-4079(199909)34:8<943::AID-CRAT943>3.0.CO;2-O
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- Article