Works by YASSIEVICH, I. N.

Results: 35

TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 279, doi. 10.1142/S0219581X07004729

By:

KAGAN, M. S.;
ALTUKHOV, I. V.;
PAPROTSKIY, S. K.;
SINIS, V. P.;
YASSIEVICH, I. N.;
KOLODZEY, J.

Publication type:

Article

The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering.

Published in:

Semiconductors, 2001, v. 35, n. 5, p. 565

By:

Prokof’ev, A. A.;
Odnoblyudov, M. A.;
Yassievich, I. N.

Publication type:

Article

Mechanism of erbium electroluminescence in hydrogenated amorphous silicon.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 622, doi. 10.1134/1.1187741

By:

Bresler, M. S.;
Gusev, O. B.;
Pak, P. E.;
Terukov, E. I.;
Tséndin, K. D.;
Yassievich, I. N.

Publication type:

Article

Resonance acceptor states in uniaxially strained semiconductors.

Published in:

Semiconductors, 1997, v. 31, n. 10, p. 1014, doi. 10.1134/1.1187016

By:

Odnoblyudov, M. A.;
Pakhomov, A. A.;
Chistyakov, V. M.;
Yassievich, I. N.

Publication type:

Article

Lattice deformation in silicon and germanium nanocrystals.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 11, p. 2879, doi. 10.1002/pssa.201600372

By:

Gert, A. V.;
Prokofiev, A. A.;
Yassievich, I. N.

Publication type:

Article

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.

Published in:

Physica Status Solidi (B), 2007, v. 244, n. 1, p. 192, doi. 10.1002/pssb.200672548

By:

Kagan, M. S.;
Altukhov, I. V.;
Sinis, V. P.;
Paprotskiy, S. K.;
Yassievich, I. N.;
Kolodzey, J.

Publication type:

Article

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.

Published in:

Physica Status Solidi (B), 1999, v. 211, n. 1, p. 495, doi. 10.1002/(SICI)1521-3951(199901)211:1<495::AID-PSSB495>3.0.CO;2-8

By:

Kagan, M. S.;
Altukhov, I. V.;
Korolev, K. A.;
Orlov, D. V.;
Sinis, V. P.;
Thomas, S. G.;
Wang, K. L.;
Yassievich, I. N.

Publication type:

Article

Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure.

Published in:

Physica Status Solidi (B), 1996, v. 198, n. 1, p. 35, doi. 10.1002/pssb.2221980105

By:

Altukhov, I. V.;
Chirkova, E. G.;
Kagan, M. S.;
Korolev, K. A.;
Sinis, V. P.;
Yassievich, I. N.

Publication type:

Article

Electron Confinement Due to Reflection from the Interface in Heterojunctions.

Published in:

Physica Status Solidi (B), 1991, v. 165, n. 1, p. K9, doi. 10.1002/pssb.2221650130

By:

Yassievich, I. N.;
Bresler, M. S.;
Gusev, O. B.;
Yakovlev, Yu. P.

Publication type:

Article

Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications.

Published in:

Nature Photonics, 2008, v. 2, n. 2, p. 105, doi. 10.1038/nphoton.2007.279

By:

Timmerman, D.;
Izeddin, I.;
Stallinga, P.;
Yassievich, I. N.;
Gregorkiewicz, T.

Publication type:

Article

Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.

Published in:

Semiconductors, 2020, v. 54, n. 2, p. 181, doi. 10.1134/S1063782620020207

By:

Sreseli, O. M.;
Bert, N. A.;
Nevedomskii, V. N.;
Lihachev, A. I.;
Yassievich, I. N.;
Ershov, A. V.;
Nezhdanov, A. V.;
Mashin, A. I.;
Andreev, B. A.;
Yablonsky, A. N.

Publication type:

Article

Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1264, doi. 10.1134/S1063782618100020

By:

Belolipetskiy, A. V.;
Nestoklon, M. O.;
Yassievich, I. N.

Publication type:

Article

Impact of resonance-state scattering on the kinetics of two-dimensional electrons.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 198, doi. 10.1134/S1063782610020119

By:

Keepa, M. S.;
Alekseev, P.;
Yassievich, I. N.

Publication type:

Article

Excitation of Er3+ ions in SiO2 with Si nanocrystals.

Published in:

Semiconductors, 2008, v. 42, n. 8, p. 971, doi. 10.1134/S1063782608080162

By:

Prokofiev, A. A.;
Moskalenko, A. S.;
Yassievich, I. N.

Publication type:

Article

Impurity resonance states in semiconductors.

Published in:

Semiconductors, 2008, v. 42, n. 8, p. 880, doi. 10.1134/S1063782608080034

By:

Aleshkin, V. Ya.;
Gavrilenko, L. V.;
Odnoblyudov, M. A.;
Yassievich, I. N.

Publication type:

Article

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1092, doi. 10.1134/S106378260709014X

By:

Alekseev, P. S.;
Yakunin, M. V.;
Yassievich, I. N.

Publication type:

Article

Electric-field effect on the spin-dependent resonance tunneling.

Published in:

Semiconductors, 2006, v. 40, n. 12, p. 1402, doi. 10.1134/S1063782606120062

By:

Alekseev, P. S.;
Chistyakov, V. M.;
Yassievich, I. N.

Publication type:

Article

Resonant Acceptor States in Uniaxially Strained Semiconductors.

Published in:

Journal of Experimental & Theoretical Physics, 2002, v. 94, n. 3, p. 593, doi. 10.1134/1.1469158

By:

Odnoblyudov, M. A.;
Prokofiev, A. A.;
Yassievich, I. N.

Publication type:

Article

Effect of a Magnetic Field on Thermally Stimulated Ionization of Impurity Centers in Semiconductors by Submillimeter Radiation.

Published in:

Journal of Experimental & Theoretical Physics, 2000, v. 90, n. 1, p. 217, doi. 10.1134/1.559077

By:

Moskalenko, A. S.;
Perel’, V. I.;
Yassievich, I. N.

Publication type:

Article

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium.

Published in:

Journal of Experimental & Theoretical Physics, 1999, v. 88, n. 1, p. 51, doi. 10.1134/1.558763

By:

Altukhov, I. V.;
Kagan, M. S.;
Korolev, K. A.;
Sinis, V. P.;
Chirkova, E. G.;
Odnoblyudov, M. A.;
Yassievich, I. N.

Publication type:

Article

Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals.

Published in:

Nature Nanotechnology, 2010, v. 5, n. 12, p. 878, doi. 10.1038/nnano.2010.236

By:

de Boer, W. D. A. M.;
Timmerman, D.;
Dohnalová, K.;
Yassievich, I. N.;
Zhang, H.;
Buma, W. J.;
Gregorkiewicz, T.

Publication type:

Article

Direct bandgap optical transitions in Si nanocrystals.

Published in:

JETP Letters, 2010, v. 90, n. 12, p. 758, doi. 10.1134/S0021364009240059

By:

Prokofiev, A. A.;
Moskalenko, A. S.;
Yassievich, I. N.;
de Boer, W. D. A. M.;
Timmerman, D.;
Zhang, H.;
Buma, W. J.;
Gregorkiewicz, T.

Publication type:

Article

Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment.

Published in:

JETP Letters, 2010, v. 90, n. 10, p. 683, doi. 10.1134/S002136400922010X

By:

Poddubny, A. N.;
Goupalov, S. V.;
Kozub, V. I.;
Yassievich, I. N.

Publication type:

Article

Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity.

Published in:

JETP Letters, 2006, v. 83, n. 8, p. 351, doi. 10.1134/S002136400608011X

By:

Andrianov, A. V.;
Zakhar'in, A. O.;
Yassievich, I. N.;
Zinov'ev, N. N.

Publication type:

Article

Terahertz Electroluminescence under Conditions of Shallow Acceptor Breakdown in Germanium.

Published in:

JETP Letters, 2004, v. 79, n. 8, p. 365, doi. 10.1134/1.1772432

By:

Andrianov, A. V.;
Zakhar'in, A. O.;
Yassievich, I. N.;
Zinov'ev, N. N.

Publication type:

Article

Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors.

Published in:

JETP Letters, 1998, v. 68, n. 10, p. 804

By:

Perel’, V. I.;
Yassievich, I. N.

Publication type:

Article

Cascade theory of electron capture in quantum wells.

Published in:

Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 4, p. 806, doi. 10.1134/S1063776108040213

By:

Alekseev, P. S.;
Kipa, M. S.;
Perel, V. I.;
Yassievich, I. N.

Publication type:

Article

Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2150, doi. 10.1002/pssb.201600525

By:

Andreev, B. A.;
Yablonskiy, A. N.;
Krasilnik, Z. F.;
Ershov, A. V.;
Grachev, D. A.;
Gert, A. V.;
Gusev, O. B.;
Yassievich, I. N.

Publication type:

Article

RADIATION SPECTRUM OF HOT EXCITONS IN Si NANOCRYSTALS.

Published in:

Lithuanian Journal of Physics, 2015, v. 55, n. 4, p. 292

By:

Gert, A. V.;
Yassievich, I. N.

Publication type:

Article

Impact ionization in AIIIBV semiconductors in high electric fields.

Published in:

Physica Status Solidi (B), 1987, v. 140, n. 1, p. 9, doi. 10.1002/pssb.2221400102

By:

Dmitriev, A. P.;
Mikhailova, M. P.;
Yassievich, I. N.

Publication type:

Article

Auger Recombination of Electrons via Deep and Shallow Acceptors.

Published in:

Physica Status Solidi (B), 1985, v. 132, n. 1, p. 203, doi. 10.1002/pssb.2221320121

By:

Khalfin, V. B.;
Strikha, M. V.;
Yassievich, I. N.

Publication type:

Article

Tunneling from Deep Levels of l-c Type in Electric Fields.

Published in:

Physica Status Solidi (B), 1985, v. 127, n. 1, p. 339, doi. 10.1002/pssb.2221270134

By:

Köster, H.;
Kurnosova, O. V.;
Yassievich, I. N.

Publication type:

Article

High Energy Distribution Function in an Electric Field and Electron Impact Ionization in AIIIBV Semiconductors.

Published in:

Physica Status Solidi (B), 1982, v. 113, n. 1, p. 125, doi. 10.1002/pssb.2221130112

By:

Dmitriev, A. P.;
Mikhailova, M. P.;
Yassievich, I. N.

Publication type:

Article

The Effect of Phonon Heating on Photoelectric Phenomena (II).

Published in:

Physica Status Solidi (B), 1972, v. 51, n. 1, p. 161, doi. 10.1002/pssb.2220510117

By:

Abakumov, V. N.;
Schleifstein, M.;
Yassievich, I. N.

Publication type:

Article

The effect of phonon heating on photoelectric phenomena.

Published in:

Physica Status Solidi (B), 1970, v. 42, n. 1, p. 415, doi. 10.1002/pssb.19700420142

By:

Yassievich, I. N.;
Schleifstein, M.

Publication type:

Article

Works by YASSIEVICH, I. N.

TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.

The Distribution Function of Hot Charge Carriers under Conditions of Resonance Scattering.

Mechanism of erbium electroluminescence in hydrogenated amorphous silicon.

Resonance acceptor states in uniaxially strained semiconductors.

Lattice deformation in silicon and germanium nanocrystals.

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures.

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.

Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure.

Electron Confinement Due to Reflection from the Interface in Heterojunctions.

Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications.

Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties.

Simulation of Electron and Hole States in Si Nanocrystals in a SiO<sub>2</sub> Matrix: Choice of Parameters of the Empirical Tight-Binding Method.

Impact of resonance-state scattering on the kinetics of two-dimensional electrons.

Excitation of Er<sup>3+</sup> ions in SiO<sub>2</sub> with Si nanocrystals.

Impurity resonance states in semiconductors.

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field.

Electric-field effect on the spin-dependent resonance tunneling.

Resonant Acceptor States in Uniaxially Strained Semiconductors.

Effect of a Magnetic Field on Thermally Stimulated Ionization of Impurity Centers in Semiconductors by Submillimeter Radiation.

Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium.

Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals.

Direct bandgap optical transitions in Si nanocrystals.

Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment.

Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity.

Terahertz Electroluminescence under Conditions of Shallow Acceptor Breakdown in Germanium.

Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors.

Cascade theory of electron capture in quantum wells.

Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence.

RADIATION SPECTRUM OF HOT EXCITONS IN Si NANOCRYSTALS.

Impact ionization in A<sup>III</sup>B<sup>V</sup> semiconductors in high electric fields.

Auger Recombination of Electrons via Deep and Shallow Acceptors.

Tunneling from Deep Levels of l-c Type in Electric Fields.

High Energy Distribution Function in an Electric Field and Electron Impact Ionization in A<sup>III</sup>B<sup>V</sup> Semiconductors.

The Effect of Phonon Heating on Photoelectric Phenomena (II).

The effect of phonon heating on photoelectric phenomena.