Found: 1
Select item for more details and to access through your institution.
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.
- Published in:
- Journal of Electronic Materials, 2012, v. 41, n. 3, p. 471, doi. 10.1007/s11664-011-1864-x
- By:
- Publication type:
- Article