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Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates (Phys. Status Solidi A 4∕2019).
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 4, p. N.PAG, doi. 10.1002/pssa.201970019
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Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 4, p. N.PAG, doi. 10.1002/pssa.201800652
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Characterization of dislocation arrays in AlN single crystals grown by PVT.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1545, doi. 10.1002/pssa.201000957
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Sharp bound and free exciton lines from homoepitaxial AlN.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1520, doi. 10.1002/pssa.201000947
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Fermi Level Control of Point Defects During Growth of Mg-Doped GaN.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 815, doi. 10.1007/s11664-012-2342-9
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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE.
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- Materials (1996-1944), 2019, v. 12, n. 15, p. 2455, doi. 10.3390/ma12152455
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Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 511, doi. 10.1002/pssb.201100381
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