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Large-Scale β -Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage.
- Published in:
- Electronics (2079-9292), 2023, v. 12, n. 20, p. 4315, doi. 10.3390/electronics12204315
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A 1.6 kV Ga 2 O 3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10 −5 A/cm 2 Enabled by Field Plates and N Ion-Implantation Edge Termination.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 978, doi. 10.3390/nano14110978
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- Publication type:
- Article