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Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5138, doi. 10.1007/s11664-020-08159-x
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Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 11, p. 744, doi. 10.1049/el.2017.0521
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Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 10, p. 744, doi. 10.1049/el.2017.0521
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- Article
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 145, doi. 10.1002/pssb.201552419
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Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 169, doi. 10.1002/pssb.201552407
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- Article
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 210, doi. 10.1002/pssa.201532479
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Solar‐blind AlGaN MSM photodetectors with 24% external quantum efficiency at 0 V.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 20, p. 1598, doi. 10.1049/el.2015.2364
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- Article
Opinions about euthanasia and advanced dementia: a qualitative study among Dutch physicians and members of the general public.
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- BMC Medical Ethics, 2015, v. 16, n. 1, p. 1, doi. 10.1186/1472-6939-16-7
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- Article
In-situ observation of InGaN quantum well decomposition during growth of laser diodes.
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- Crystal Research & Technology, 2015, v. 50, n. 6, p. 499, doi. 10.1002/crat.201500073
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Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1180, doi. 10.1002/pssb.201451609
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Enhanced quantum efficiency of AlGaN photodetectors by patterned growth.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1005, doi. 10.1002/pssa.201431680
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- Article
Opinions about euthanasia and advanced dementia: a qualitative study among Dutch physicians and members of the general public.
- Published in:
- BMC Medical Ethics, 2015, v. 16, n. 1, p. 1, doi. 10.1186/1472-6939-16-7
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- Publication type:
- Article
Opinions about euthanasia and advanced dementia: a qualitative study among Dutch physicians and members of the general public.
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- BMC Medical Ethics, 2015, v. 16, n. 1, p. 83, doi. 10.1186/1472-6939-16-7
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- Article
Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 175, doi. 10.1007/s00340-013-5671-3
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- Article
Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 814, doi. 10.1007/s11664-013-2871-x
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- Article
Anisotropic Responsivity of AlGaN Metal-Semiconductor-Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 833, doi. 10.1007/s11664-013-2955-7
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Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 4, p. 756, doi. 10.1002/pssa.201300448
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Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting.
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- Journal of Applied Spectroscopy, 2013, v. 80, n. 3, p. 449, doi. 10.1007/s10812-013-9786-4
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- Article
Si Doping of GaN in Hydride Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 820, doi. 10.1007/s11664-012-2373-2
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AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 3, p. 451, doi. 10.1002/pssa.201200648
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Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells.
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- Physica Status Solidi (B), 2011, v. 248, n. 3, p. 638, doi. 10.1002/pssb.201046350
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Optical and Structural Properties of In<sub>0.08</sub>GaN/In<sub>0.02</sub>GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies.
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- Journal of Electronic Materials, 2010, v. 39, n. 6, p. 677, doi. 10.1007/s11664-010-1159-7
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Structure investigations of nonpolar GaN layers.
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- Journal of Microscopy, 2010, v. 237, n. 3, p. 308, doi. 10.1111/j.1365-2818.2009.03249.x
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Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 51, doi. 10.1007/s10854-007-9557-1
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HigHighly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm.
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- Crystal Research & Technology, 2005, v. 40, n. 9, p. 877
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Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser.
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- Applied Physics B: Lasers & Optics, 2005, v. 81, n. 4, p. 443, doi. 10.1007/s00340-005-1931-1
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Spectroscopic process sensors in MOVPE device production.
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- Applied Physics A: Materials Science & Processing, 1999, v. 68, n. 3, p. 309, doi. 10.1007/s003390050893
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- Article