Found: 39
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High‐Performance White Emission from Cu‐Based Perovskite Compound.
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- Advanced Optical Materials, 2024, v. 12, n. 18, p. 1, doi. 10.1002/adom.202400092
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- Article
Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO<sub>2</sub>/Si(100) for Monolithic Optoelectronic Integration.
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- Advanced Science, 2024, v. 11, n. 20, p. 1, doi. 10.1002/advs.202305576
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- Article
The Mechanical and Functional Behaviors of Mn–15 wt%Cu Alloy Produced by Selective Laser Melting.
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- Advanced Engineering Materials, 2024, v. 26, n. 5, p. 1, doi. 10.1002/adem.202301522
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- Article
Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode.
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- Small, 2024, v. 20, n. 7, p. 1, doi. 10.1002/smll.202306132
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- Article
Wafer‐Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light‐Emitting Diode (Small 7/2024).
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- Small, 2024, v. 20, n. 7, p. 1, doi. 10.1002/smll.202470058
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- Article
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy.
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- Micromachines, 2023, v. 14, n. 6, p. 1098, doi. 10.3390/mi14061098
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- Article
Toward Direct Growth of Ultra‐Flat Graphene.
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- Advanced Functional Materials, 2022, v. 32, n. 42, p. 1, doi. 10.1002/adfm.202200428
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- Article
Toward Direct Growth of Ultra‐Flat Graphene (Adv. Funct. Mater. 42/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 42, p. 1, doi. 10.1002/adfm.202270239
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- Article
Continuous Single‐Crystalline GaN Film Grown on WS<sub>2</sub>‐Glass Wafer.
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- Small, 2022, v. 18, n. 41, p. 1, doi. 10.1002/smll.202202529
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- Article
Continuous Single‐Crystalline GaN Film Grown on WS<sub>2</sub>‐Glass Wafer (Small 41/2022).
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- Small, 2022, v. 18, n. 41, p. 1, doi. 10.1002/smll.202202529
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- Article
Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.
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- 2022
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- Correction Notice
Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD.
- Published in:
- Small, 2022, v. 18, n. 16, p. 1, doi. 10.1002/smll.202200057
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- Article
Atomic‐Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD (Small 16/2022).
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- Small, 2022, v. 18, n. 16, p. 1, doi. 10.1002/smll.202270077
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- Article
Transfer‐Enabled Fabrication of Graphene Wrinkle Arrays for Epitaxial Growth of AlN Films.
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- Advanced Materials, 2022, v. 34, n. 1, p. 1, doi. 10.1002/adma.202105851
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- Article
Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films.
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- Small, 2021, v. 17, n. 19, p. 1, doi. 10.1002/smll.202100098
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- Article
The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga 2 O 3 Substrate for Vertical Light Emitting Diodes.
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- Photonics, 2021, v. 8, n. 2, p. 42, doi. 10.3390/photonics8020042
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- Article
GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate.
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- Crystals (2073-4352), 2020, v. 10, n. 9, p. 787, doi. 10.3390/cryst10090787
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- Article
Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes.
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- Advanced Functional Materials, 2020, v. 30, n. 31, p. 1, doi. 10.1002/adfm.202001483
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- Article
Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020).
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- Advanced Functional Materials, 2020, v. 30, n. 31, p. 1, doi. 10.1002/adfm.202070209
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- Article
Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes.
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- Advanced Science, 2020, v. 7, n. 15, p. 1, doi. 10.1002/advs.202001272
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- Article
Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer.
- Published in:
- Advanced Materials, 2019, v. 31, n. 29, p. N.PAG, doi. 10.1002/adma.201901624
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- Article
UV Light‐Emitting Diodes: Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer (Adv. Mater. 29/2019).
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- Advanced Materials, 2019, v. 31, n. 29, p. N.PAG, doi. 10.1002/adma.201970211
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- Article
Improved Epitaxy of AlN Film for Deep‐Ultraviolet Light‐Emitting Diodes Enabled by Graphene.
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- Advanced Materials, 2019, v. 31, n. 23, p. N.PAG, doi. 10.1002/adma.201807345
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- Article
Epitaxy of III-Nitrides on β-Ga2O3 and Its Vertical Structure LEDs.
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- Micromachines, 2019, v. 10, n. 5, p. 322, doi. 10.3390/mi10050322
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- Article
Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates.
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- Journal of Materials Science, 2018, v. 53, n. 24, p. 16439, doi. 10.1007/s10853-018-2804-4
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- Article
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si.
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- Materials (1996-1944), 2018, v. 11, n. 12, p. 2372, doi. 10.3390/ma11122372
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- Article
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2.
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- Materials (1996-1944), 2018, v. 11, n. 12, p. 2464, doi. 10.3390/ma11122464
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- Article
Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching.
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- Journal of Nanophotonics, 2018, v. 12, n. 4, p. 1, doi. 10.1117/1.JNP.12.043509
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- Article
Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes.
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- Advanced Materials Interfaces, 2018, v. 5, n. 18, p. N.PAG, doi. 10.1002/admi.201800662
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- Article
High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.
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- Advanced Materials, 2018, v. 30, n. 30, p. 1, doi. 10.1002/adma.201801608
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- Article
Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications.
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- Nano Research, 2016, v. 9, n. 10, p. 3048, doi. 10.1007/s12274-016-1187-6
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- Article
Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.
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- Scientific Reports, 2016, p. 28620, doi. 10.1038/srep28620
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- Article
Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1209, doi. 10.1002/pssa.201532766
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- Article
Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 10, p. 2341, doi. 10.1002/pssa.201532223
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- Article
Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity.
- Published in:
- Small, 2015, v. 11, n. 37, p. 4910, doi. 10.1002/smll.201501026
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- Article
Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal.
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- Small, 2014, v. 10, n. 9, p. 1668, doi. 10.1002/smll.201303599
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- Article
The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 1244, doi. 10.1007/s11664-014-3005-9
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- Article
Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 3, p. 559, doi. 10.1002/pssa.201228777
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- Article
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.
- Published in:
- Nanoscale Research Letters, 2009, v. 4, n. 7, p. 753, doi. 10.1007/s11671-009-9310-1
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- Publication type:
- Article