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Carrier Injection to In 0.4 Ga 0.6 As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 3, p. 319, doi. 10.3390/cryst12030319
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- Article
Modeling of Λ-graded In<sub>x</sub>Ga<sub>1−x</sub>N solar cells: comparison of strained and relaxed features.
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- Journal of Photonics for Energy, 2022, v. 12, n. 2, p. 22205, doi. 10.1117/1.JPE.12.022205
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- Article
Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-67961-z
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- Article
Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.
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- Nano Research, 2022, v. 15, n. 3, p. 2405, doi. 10.1007/s12274-021-3855-4
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- Article
Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells).
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- Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3512, doi. 10.1007/s11664-020-08033-w
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- Article
Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime.
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- Crystal Research & Technology, 2020, v. 55, n. 6, p. 1, doi. 10.1002/crat.201900228
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- Article
PL of low-density InAs/GaAs quantum dots with different bimodal populations.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 9, p. 599, doi. 10.1049/mnl.2016.0779
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- Article
Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs.
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- Crystals (2073-4352), 2016, v. 6, n. 11, p. 144, doi. 10.3390/cryst6110144
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- Article
Experimental characterization of a fully polarimetric pulsed terahertz spectroscopy system.
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- Frontiers in Physics, 2024, p. 1, doi. 10.3389/fphy.2024.1317576
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- Article
Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub>x</sub>Ga<sub>1–x</sub>N Layers.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900591
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- Article
Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111).
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- Nanomaterials (2079-4991), 2023, v. 13, n. 6, p. 970, doi. 10.3390/nano13060970
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- Article