Works by Wang, Shuopei

Results: 25

Frontispiz: Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Published in:

Angewandte Chemie, 2018, v. 130, n. 43, p. N.PAG, doi. 10.1002/ange.201884361

By:

Xin, Na;
Jia, Chuancheng;
Gong, Yao;
Li, Mingliang;
Guo, Xuefeng;
Li, Xingxing;
Yang, Jinlong;
Wang, Shuopei;
Zhang, Guangyu

Publication type:

Article

Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Published in:

Angewandte Chemie, 2018, v. 130, n. 43, p. 14222, doi. 10.1002/ange.201807465

By:

Xin, Na;
Jia, Chuancheng;
Gong, Yao;
Li, Mingliang;
Guo, Xuefeng;
Li, Xingxing;
Yang, Jinlong;
Wang, Shuopei;
Zhang, Guangyu

Publication type:

Article

Hot-Pressed Two-Dimensional Amorphous Metals and Their Electronic Properties.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/cryst12050616

By:

Liu, Jieying;
Tang, Jian;
Zhao, Jiaojiao;
Zhao, Yanchong;
Shen, Cheng;
Liao, Mengzhou;
Wang, Shuopei;
Tian, Jinpeng;
Chu, Yanbang;
Li, Jiawei;
Wei, Zheng;
Long, Gen;
Yang, Wei;
Yang, Rong;
Li, Na;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2.

Published in:

Crystals (2073-4352), 2016, v. 6, n. 9, p. 115, doi. 10.3390/cryst6090115

By:

Luojun Du;
Hua Yu;
Li Xie;
Shuang Wu;
Shuopei Wang;
Xiaobo Lu;
Mengzhou Liao;
Jianling Meng;
Jing Zhao;
Jing Zhang;
Jianqi Zhu;
Peng Chen;
Guole Wang;
Rong Yang;
Dongxia Shi;
Guangyu Zhang

Publication type:

Article

Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses.

Published in:

Nano Research, 2022, v. 15, n. 6, p. 5418, doi. 10.1007/s12274-022-4122-z

By:

Li, Na;
He, Congli;
Wang, Qinqin;
Tang, Jianshi;
Zhang, Qingtian;
Shen, Cheng;
Tang, Jian;
Huang, Heyi;
Wang, Shuopei;
Li, Jiawei;
Huang, Biying;
Wei, Zheng;
Guo, Yutuo;
Yuan, Jiahao;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021).

Published in:

Advanced Functional Materials, 2021, v. 31, n. 27, p. 1, doi. 10.1002/adfm.202170197

By:

Tang, Jian;
He, Congli;
Tang, Jianshi;
Yue, Kun;
Zhang, Qingtian;
Liu, Yizhou;
Wang, Qinqin;
Wang, Shuopei;
Li, Na;
Shen, Cheng;
Zhao, Yanchong;
Liu, Jieying;
Yuan, Jiahao;
Wei, Zheng;
Li, Jiawei;
Watanabe, Kenji;
Taniguchi, Takashi;
Shang, Dashan;
Wang, Shouguo;
Yang, Wei

Publication type:

Article

A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 27, p. 1, doi. 10.1002/adfm.202011083

By:

Tang, Jian;
He, Congli;
Tang, Jianshi;
Yue, Kun;
Zhang, Qingtian;
Liu, Yizhou;
Wang, Qinqin;
Wang, Shuopei;
Li, Na;
Shen, Cheng;
Zhao, Yanchong;
Liu, Jieying;
Yuan, Jiahao;
Wei, Zheng;
Li, Jiawei;
Watanabe, Kenji;
Taniguchi, Takashi;
Shang, Dashan;
Wang, Shouguo;
Yang, Wei

Publication type:

Article

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2.

Published in:

Small Science, 2022, v. 2, n. 11, p. 1, doi. 10.1002/smsc.202200062

By:

Li, Jiawei;
Wang, Shuopei;
Li, Lu;
Wei, Zheng;
Wang, Qinqin;
Sun, Huacong;
Tian, Jinpeng;
Guo, Yutuo;
Liu, Jieying;
Yu, Hua;
Li, Na;
Long, Gen;
Bai, Xuedong;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Atomic Layer Deposition: Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics (Adv. Mater. Interfaces 10/2019).

Published in:

Advanced Materials Interfaces, 2019, v. 6, n. 10, p. N.PAG, doi. 10.1002/admi.201802055

By:

Li, Na;
Wei, Zheng;
Zhao, Jing;
Wang, Qinqin;
Shen, Cheng;
Wang, Shuopei;
Tang, Jian;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics.

Published in:

Advanced Materials Interfaces, 2019, v. 6, n. 10, p. N.PAG, doi. 10.1002/admi.201802055

By:

Li, Na;
Wei, Zheng;
Zhao, Jing;
Wang, Qinqin;
Shen, Cheng;
Wang, Shuopei;
Tang, Jian;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors.

Published in:

Advanced Materials, 2017, v. 29, n. 37, p. n/a, doi. 10.1002/adma.201702522

By:

Xie, Li;
Liao, Mengzhou;
Wang, Shuopei;
Yu, Hua;
Du, Luojun;
Tang, Jian;
Zhao, Jing;
Zhang, Jing;
Chen, Peng;
Lu, Xiaobo;
Wang, Guole;
Xie, Guibai;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation.

Published in:

Advanced Materials, 2017, v. 29, n. 34, p. n/a, doi. 10.1002/adma.201702076

By:

Zhao, Jing;
Li, Na;
Yu, Hua;
Wei, Zheng;
Liao, Mengzhou;
Chen, Peng;
Wang, Shuopei;
Shi, Dongxia;
Sun, Qijun;
Zhang, Guangyu

Publication type:

Article

Switchable friction enabled by nanoscale self-assembly on graphene.

Published in:

Nature Communications, 2016, v. 7, n. 2, p. 10745, doi. 10.1038/ncomms10745

By:

Gallagher, Patrick;
Lee, Menyoung;
Amet, Francois;
Maksymovych, Petro;
Wang, Jun;
Wang, Shuopei;
Lu, Xiaobo;
Zhang, Guangyu;
Watanabe, Kenji;
Taniguchi, Takashi;
Goldhaber-Gordon, David

Publication type:

Article

Experimental evidence of plasmarons and effective fine structure constant in electron-doped graphene/h-BN heterostructure.

Published in:

NPJ Quantum Materials, 2021, v. 6, n. 1, p. 1, doi. 10.1038/s41535-021-00386-7

By:

Zhang, Hongyun;
Wang, Shuopei;
Wang, Eryin;
Lu, Xiaobo;
Li, Qian;
Bao, Changhua;
Deng, Ke;
Zhang, Haoxiong;
Yao, Wei;
Chen, Guorui;
Fedorov, Alexei V.;
Denlinger, Jonathan D.;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu;
Zhou, Shuyun

Publication type:

Article

Eight In. Wafer‐Scale Epitaxial Monolayer MoS2.

Published in:

Advanced Materials, 2024, v. 36, n. 30, p. 1, doi. 10.1002/adma.202402855

By:

Yu, Hua;
Huang, Liangfeng;
Zhou, Lanying;
Peng, Yalin;
Li, Xiuzhen;
Yin, Peng;
Zhao, Jiaojiao;
Zhu, Mingtong;
Wang, Shuopei;
Liu, Jieying;
Du, Hongyue;
Tang, Jian;
Zhang, Songge;
Zhou, Yuchao;
Lu, Nianpeng;
Liu, Kaihui;
Li, Na;
Zhang, Guangyu

Publication type:

Article

Retraction: Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation.

Published in:

Advanced Materials, 2023, v. 35, n. 23, p. 1, doi. 10.1002/adma.202302631

By:

Zhao, Jing;
Li, Na;
Yu, Hua;
Wei, Zheng;
Liao, Mengzhou;
Chen, Peng;
Wang, Shuopei;
Shi, Dongxia;
Sun, Qijun;
Zhang, Guangyu

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202270047

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200238

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202070048

By:

Tang, Jian;
Wang, Qinqin;
Wei, Zheng;
Shen, Cheng;
Lu, Xiaobo;
Wang, Shuopei;
Zhao, Yanchong;
Liu, Jieying;
Li, Na;
Chu, Yanbang;
Tian, Jinpeng;
Wu, Fanfan;
Yang, Wei;
He, Congli;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu

Publication type:

Article

Vertical Integration of 2D Building Blocks for All‐2D Electronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000550

By:

Tang, Jian;
Wang, Qinqin;
Wei, Zheng;
Shen, Cheng;
Lu, Xiaobo;
Wang, Shuopei;
Zhao, Yanchong;
Liu, Jieying;
Li, Na;
Chu, Yanbang;
Tian, Jinpeng;
Wu, Fanfan;
Yang, Wei;
He, Congli;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu

Publication type:

Article

Control of Unipolar/Ambipolar Transport in Single‐Molecule Transistors through Interface Engineering.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901237

By:

Xin, Na;
Kong, Xianghua;
Zhang, Yu‐Peng;
Jia, Chuancheng;
Liu, Lei;
Gong, Yao;
Zhang, Weining;
Wang, Shuopei;
Zhang, Guangyu;
Zhang, Hao‐Li;
Guo, Hong;
Guo, Xuefeng

Publication type:

Article

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970018

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

New Floating Gate Memory with Excellent Retention Characteristics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800726

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Frontispiece: Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Published in:

Angewandte Chemie International Edition, 2018, v. 57, n. 43, p. N.PAG, doi. 10.1002/anie.201884361

By:

Xin, Na;
Li, Xingxing;
Jia, Chuancheng;
Gong, Yao;
Li, Mingliang;
Wang, Shuopei;
Zhang, Guangyu;
Yang, Jinlong;
Guo, Xuefeng

Publication type:

Article

Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Published in:

Angewandte Chemie International Edition, 2018, v. 57, n. 43, p. 14026, doi. 10.1002/anie.201807465

By:

Xin, Na;
Li, Xingxing;
Jia, Chuancheng;
Gong, Yao;
Li, Mingliang;
Wang, Shuopei;
Zhang, Guangyu;
Yang, Jinlong;
Guo, Xuefeng

Publication type:

Article

Works by Wang, Shuopei

Frontispiz: Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Hot-Pressed Two-Dimensional Amorphous Metals and Their Electronic Properties.

The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS<sub>2</sub>.

Gate-tunable large-scale flexible monolayer MoS<sub>2</sub> devices for photodetectors and optoelectronic synapses.

Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021).

A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing.

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe<sub>2</sub>.

Atomic Layer Deposition: Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub> Directly on 2D Materials for High‐Performance Electronics (Adv. Mater. Interfaces 10/2019).

Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub> Directly on 2D Materials for High‐Performance Electronics.

Graphene-Contacted Ultrashort Channel Monolayer MoS<sub>2</sub> Transistors.

Highly Sensitive MoS<sub>2</sub> Humidity Sensors Array for Noncontact Sensation.

Switchable friction enabled by nanoscale self-assembly on graphene.

Experimental evidence of plasmarons and effective fine structure constant in electron-doped graphene/h-BN heterostructure.

Eight In. Wafer‐Scale Epitaxial Monolayer MoS<sub>2</sub>.

Retraction: Highly Sensitive MoS<sub>2</sub> Humidity Sensors Array for Noncontact Sensation.

Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities.

2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020).

Vertical Integration of 2D Building Blocks for All‐2D Electronics.

Control of Unipolar/Ambipolar Transport in Single‐Molecule Transistors through Interface Engineering.

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

New Floating Gate Memory with Excellent Retention Characteristics.

Frontispiece: Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.

Tuning Charge Transport in Aromatic‐Ring Single‐Molecule Junctions via Ionic‐Liquid Gating.