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Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
- Published in:
- Micromachines, 2022, v. 13, n. 10, p. 1579, doi. 10.3390/mi13101579
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- Publication type:
- Article
Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?
- Published in:
- 2024
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- Publication type:
- Product Review
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6425, doi. 10.1007/s10854-021-05360-4
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- Publication type:
- Article
Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6133, doi. 10.1007/s10854-021-05331-9
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- Publication type:
- Article
SiN-based platform toward monolithic integration in photonics and electronics.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 1, doi. 10.1007/s10854-020-04909-z
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- Publication type:
- Article
Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10078, doi. 10.1007/s10854-020-03553-x
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- Publication type:
- Article
Novel gap filling technique of shallow trench isolation structure in 16/14 nm FinFET using sub-atmospheric chemical vapor deposition.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9796, doi. 10.1007/s10854-020-03524-2
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- Publication type:
- Article
Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5854, doi. 10.1007/s10854-019-02661-7
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- Publication type:
- Article
Study of selective isotropic etching Si1−xGex in process of nanowire transistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 134, doi. 10.1007/s10854-019-02269-x
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- Publication type:
- Article
Study of n-type doping in germanium by temperature based PF+ implantation.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 161, doi. 10.1007/s10854-019-02522-3
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- Publication type:
- Article
Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1).
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 105, doi. 10.1007/s10854-019-01378-x
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- Publication type:
- Article
A novel method for source/drain ion implantation for 20 nm FinFETs and beyond.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 98, doi. 10.1007/s10854-019-01274-4
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- Publication type:
- Article
SiNx films and membranes for photonic and MEMS applications.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 90, doi. 10.1007/s10854-019-01164-9
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- Publication type:
- Article
Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS).
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 26, doi. 10.1007/s10854-018-00661-7
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- Publication type:
- Article
Design impact on the performance of Ge PIN photodetectors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 18, doi. 10.1007/s10854-018-00650-w
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- Publication type:
- Article
A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si<sub>0.5</sub>Ge<sub>0.5</sub> layer epitaxial grown.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 15, p. 14130, doi. 10.1007/s10854-019-01779-y
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- Publication type:
- Article
Co-sputtering Co–Ti alloy as a single barrier/liner for Co interconnects and thermal stability enhancement using TiN metal capping.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10579, doi. 10.1007/s10854-019-01402-0
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- Publication type:
- Article
The Challenges of Advanced CMOS Process from 2D to 3D.
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- Applied Sciences (2076-3417), 2017, v. 7, n. 10, p. 1047, doi. 10.3390/app7101047
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- Publication type:
- Article
Implementation of sub-100 nm vertical channel-all-around (CAA) thin-film transistor using thermal atomic layer deposited IGZO channel.
- Published in:
- Semiconductor Technology, 2024, v. 45, n. 7, p. 1, doi. 10.1088/1674-4926/24010032
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- Publication type:
- Article
Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application.
- Published in:
- Nanoscale Research Letters, 2020, v. 15, n. 1, p. 1, doi. 10.1186/s11671-020-03456-0
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- Publication type:
- Article
Miniaturization of CMOS.
- Published in:
- Micromachines, 2019, v. 10, n. 5, p. 293, doi. 10.3390/mi10050293
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- Publication type:
- Article
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
- Published in:
- Materials (1996-1944), 2022, v. 15, n. 10, p. 3594, doi. 10.3390/ma15103594
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- Publication type:
- Article
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.
- Published in:
- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1908-0
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- Publication type:
- Article
Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 916, doi. 10.3390/nano14110916
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- Publication type:
- Article
The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 22, p. 2971, doi. 10.3390/nano13222971
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- Publication type:
- Article
Study of Selective Dry Etching Effects of 15-Cycle Si 0.7 Ge 0.3 /Si Multilayer Structure in Gate-All-Around Transistor Process.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 14, p. 2127, doi. 10.3390/nano13142127
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- Publication type:
- Article
High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 12, p. 1867, doi. 10.3390/nano13121867
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- Publication type:
- Article
Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 11, p. 1786, doi. 10.3390/nano13111786
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- Publication type:
- Article
Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 7, p. 1259, doi. 10.3390/nano13071259
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- Publication type:
- Article
A Voltage-Modulated Nanostrip Spin-Wave Filter and Spin Logic Device Thereof.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 21, p. 3838, doi. 10.3390/nano12213838
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- Publication type:
- Article
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 15, p. 2704, doi. 10.3390/nano12152704
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- Publication type:
- Article
Special Issue: Silicon Nanodevices.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 12, p. 1980, doi. 10.3390/nano12121980
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- Publication type:
- Article
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 9, p. 1403, doi. 10.3390/nano12091403
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- Publication type:
- Article
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 9, p. 741, doi. 10.3390/nano12050741
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- Publication type:
- Article
Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 7, p. 1218, doi. 10.3390/nano12071218
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- Publication type:
- Article
Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 6, p. 981, doi. 10.3390/nano12060981
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- Publication type:
- Article
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon.
- Published in:
- Nanomaterials (2079-4991), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/nano12050741
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- Publication type:
- Article
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 10, p. 2556, doi. 10.3390/nano11102556
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- Publication type:
- Article
Strain Modulation of Selectively and/or Globally Grown Ge Layers.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 6, p. 1421, doi. 10.3390/nano11061421
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- Publication type:
- Article
Investigation on Ge 0.8 Si 0.2 -Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 6, p. 1408, doi. 10.3390/nano11061408
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- Publication type:
- Article
The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1209, doi. 10.3390/nano11051209
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- Publication type:
- Article
Organotrialkoxysilane-Functionalized Prussian Blue Nanoparticles-Mediated Fluorescence Sensing of Arsenic(III).
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1145, doi. 10.3390/nano11051145
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- Publication type:
- Article
High Performance p-i-n Photodetectors on Ge-on-Insulator Platform.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1125, doi. 10.3390/nano11051125
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- Publication type:
- Article
Investigate on the Mechanism of HfO 2 /Si 0.7 Ge 0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 955, doi. 10.3390/nano11040955
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- Publication type:
- Article
Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 928, doi. 10.3390/nano11040928
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- Publication type:
- Article
Flexible Carbon Nanotubes Confined Yolk-Shelled Silicon-Based Anode with Superior Conductivity for Lithium Storage.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 3, p. 699, doi. 10.3390/nano11030699
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- Publication type:
- Article
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 3, p. 646, doi. 10.3390/nano11030646
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- Publication type:
- Article
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 309, doi. 10.3390/nano11020309
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- Publication type:
- Article
Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 9, p. 1715, doi. 10.3390/nano10091715
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- Publication type:
- Article
State of the Art and Future Perspectives in Advanced CMOS Technology.
- Published in:
- Nanomaterials (2079-4991), 2020, v. 10, n. 8, p. 1555, doi. 10.3390/nano10081555
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- Publication type:
- Article