Works by Wang, Baigeng

Results: 29

The interplay of ferroelectricity and magneto-transport in non-magnetic moiré superlattices.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-60783-5

By:

Jiang, Siqi;
Du, Renjun;
Jiang, Jiawei;
Liu, Gan;
Huang, Jiabei;
Du, Yu;
Han, Yaqing;
Xiao, Jingkuan;
Zhang, Di;
Lian, Fuzhuo;
Xu, Wanting;
Wang, Siqin;
Qiao, Lei;
Watanabe, Kenji;
Taniguchi, Takashi;
Xi, Xiaoxiang;
Ren, Wei;
Wang, Baigeng;
Mayorov, Alexander S.;
Chang, Kai

Publication type:

Article

High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 12, p. 1938, doi. 10.1002/adfm.201504408

By:

Liu, Erfu;
Long, Mingsheng;
Zeng, Junwen;
Luo, Wei;
Wang, Yaojia;
Pan, Yiming;
Zhou, Wei;
Wang, Baigeng;
Hu, Weida;
Ni, Zhenhua;
You, Yumeng;
Zhang, Xueao;
Qin, Shiqiao;
Shi, Yi;
Watanabe, Kenji;
Taniguchi, Takashi;
Yuan, Hongtao;
Hwang, Harold Y.;
Cui, Yi;
Miao, Feng

Publication type:

Article

The study on quantum material WTe2.

Published in:

Advances in Physics: X, 2018, v. 3, n. 1, p. 1, doi. 10.1080/23746149.2018.1468279

By:

Pan, Xing-Chen;
Wang, Xuefeng;
Song, Fengqi;
Wang, Baigeng

Publication type:

Article

Andreev reflection in a triple quantum dot system coupled with a normal-metal and a superconductor.

Published in:

Physica Status Solidi (B), 2010, v. 247, n. 2, p. 335, doi. 10.1002/pssb.200945381

By:

Bai, Long;
Wu, Yang-Jin;
Wang, Baigeng

Publication type:

Article

A selector device based on graphene-oxide heterostructures for memristor crossbar applications.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 2, p. 403, doi. 10.1007/s00339-015-9208-y

By:

Wang, Miao;
Lian, Xiaojuan;
Pan, Yiming;
Zeng, Junwen;
Wang, Chengyu;
Liu, Erfu;
Wang, Baigeng;
Yang, J.;
Miao, Feng;
Xing, Dingyu

Publication type:

Article

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets.

Published in:

European Physical Journal D (EPJ D), 2013, v. 67, n. 4, p. 1, doi. 10.1140/epjd/e2013-30536-5

By:

Chen, Taishi;
Han, Junhao;
Li, Zhaoguo;
Song, Fengqi;
Zhao, Bo;
Wang, Xuefeng;
Wang, Baigeng;
Wan, Jianguo;
Han, Min;
Zhang, Rong;
Wang, Guanghou

Publication type:

Article

The Material Efforts for Quantized Hall Devices Based on Topological Insulators.

Published in:

Advanced Materials, 2020, v. 32, n. 27, p. 1, doi. 10.1002/adma.201904593

By:

Fei, Fucong;
Zhang, Shuai;
Zhang, Minhao;
Shah, Syed Adil;
Song, Fengqi;
Wang, Xuefeng;
Wang, Baigeng

Publication type:

Article

Band Structure Perfection and Superconductivity in Type‐II Dirac Semimetal Ir1−xPtxTe2.

Published in:

Advanced Materials, 2018, v. 30, n. 35, p. 1, doi. 10.1002/adma.201801556

By:

Fei, Fucong;
Bo, Xiangyan;
Wang, Pengdong;
Ying, Jianghua;
Li, Jian;
Chen, Ke;
Dai, Qing;
Chen, Bo;
Sun, Zhe;
Zhang, Minhao;
Qu, Fanming;
Zhang, Yi;
Wang, Qianghua;
Wang, Xuefeng;
Cao, Lu;
Bu, Haijun;
Song, Fengqi;
Wan, Xiangang;
Wang, Baigeng

Publication type:

Article

Effective impurity behavior emergent from non-Hermitian proximity effect.

Published in:

Communications Physics, 2023, v. 6, n. 1, p. 1, doi. 10.1038/s42005-023-01282-1

By:

Wu, Deguang;
Chen, Jiasong;
Su, Wei;
Wang, Rui;
Wang, Baigeng;
Xing, D. Y.

Publication type:

Article

Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2.

Published in:

Nature Communications, 2016, v. 7, n. 10, p. 13142, doi. 10.1038/ncomms13142

By:

Wang, Yaojia;
Liu, Erfu;
Liu, Huimei;
Pan, Yiming;
Zhang, Longqiang;
Zeng, Junwen;
Fu, Yajun;
Wang, Miao;
Xu, Kang;
Huang, Zhong;
Wang, Zhenlin;
Lu, Hai-Zhou;
Xing, Dingyu;
Wang, Baigeng;
Wan, Xiangang;
Miao, Feng

Publication type:

Article

The positive piezoconductive effect in graphene.

Published in:

Nature Communications, 2015, v. 6, n. 9, p. 8119, doi. 10.1038/ncomms9119

By:

Xu, Kang;
Wang, Ke;
Zhao, Wei;
Bao, Wenzhong;
Liu, Erfu;
Ren, Yafei;
Wang, Miao;
Fu, Yajun;
Zeng, Junwen;
Li, Zhaoguo;
Zhou, Wei;
Song, Fengqi;
Wang, Xinran;
Shi, Yi;
Wan, Xiangang;
Fuhrer, Michael S.;
Wang, Baigeng;
Qiao, Zhenhua;
Miao, Feng;
Xing, Dingyu

Publication type:

Article

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride.

Published in:

Nature Communications, 2015, v. 6, n. 7, p. 7805, doi. 10.1038/ncomms8805

By:

Pan, Xing-Chen;
Chen, Xuliang;
Liu, Huimei;
Feng, Yanqing;
Wei, Zhongxia;
Zhou, Yonghui;
Chi, Zhenhua;
Pi, Li;
Yen, Fei;
Song, Fengqi;
Wan, Xiangang;
Yang, Zhaorong;
Wang, Baigeng;
Wang, Guanghou;
Zhang, Yuheng

Publication type:

Article

Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.

Published in:

Nature Communications, 2015, v. 6, n. 5, p. 6991, doi. 10.1038/ncomms7991

By:

Liu, Erfu;
Fu, Yajun;
Wang, Yaojia;
Feng, Yanqing;
Liu, Huimei;
Wan, Xiangang;
Zhou, Wei;
Wang, Baigeng;
Shao, Lubin;
Ho, Ching-Hwa;
Huang, Ying-Sheng;
Cao, Zhengyi;
Wang, Laiguo;
Li, Aidong;
Zeng, Junwen;
Song, Fengqi;
Wang, Xinran;
Shi, Yi;
Yuan, Hongtao;
Hwang, Harold Y.

Publication type:

Article

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.

Published in:

Nature Communications, 2014, v. 5, n. 10, p. 1, doi. 10.1038/ncomms6290

By:

Zhihao Yu;
Yiming Pan;
Yuting Shen;
Zilu Wang;
Zhun-Yong Ong;
Tao Xu;
Run Xin;
Lijia Pan;
Baigeng Wang;
Litao Sun;
Jinlan Wang;
Gang Zhang;
Yong Wei Zhang;
Yi Shi;
Xinran Wang

Publication type:

Article

Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi2Te3 crystals.

Published in:

Nature Communications, 2014, v. 5, n. 9, p. 5022, doi. 10.1038/ncomms6022

By:

Chen, Taishi;
Chen, Qian;
Schouteden, Koen;
Huang, Wenkai;
Wang, Xuefeng;
Li, Zhe;
Miao, Feng;
Wang, Xinran;
Li, Zhaoguo;
Zhao, Bo;
Li, Shaochun;
Song, Fengqi;
Wang, Jinlan;
Wang, Baigeng;
Van Haesendonck, Chris;
Wang, Guanghou

Publication type:

Article

Saturated Nonsingular Fast Sliding Mode Control for the Crane-Form Pipeline System.

Published in:

Entropy, 2022, v. 24, n. 12, p. 1800, doi. 10.3390/e24121800

By:

Wang, Baigeng;
Li, Shurong

Publication type:

Article

Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices.

Published in:

Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-01065-7

By:

Shuai Zhang;
Rui Wang;
Geliang Yu;
Xing-Chen Pan;
Zhongxia Wei;
Zhanbin Bai;
Fucong Fei;
Mingyu Wang;
Fengqi Song;
Baigeng Wang;
Dingyu Xing;
Guanghou Wang;
Li Pi;
Jinglei Zhang;
Chuanying Xi;
Yuheng Zhang;
Jian Liao;
Yongqing Li;
Xuefeng Wang

Publication type:

Article

Quantum Electronics: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS (Adv. Electron. Mater. 10/2016).

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201670055

By:

Wang, Xuefeng;
Pan, Xingchen;
Gao, Ming;
Yu, Jihai;
Jiang, Juan;
Zhang, Junran;
Zuo, Huakun;
Zhang, Minhao;
Wei, Zhongxia;
Niu, Wei;
Xia, Zhengcai;
Wan, Xiangang;
Chen, Yulin;
Song, Fengqi;
Xu, Yongbing;
Wang, Baigeng;
Wang, Guanghou;
Zhang, Rong

Publication type:

Article

Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 10, p. 1, doi. 10.1002/aelm.201600228

By:

Wang, Xuefeng;
Pan, Xingchen;
Gao, Ming;
Yu, Jihai;
Jiang, Juan;
Zhang, Junran;
Zuo, Huakun;
Zhang, Minhao;
Wei, Zhongxia;
Niu, Wei;
Xia, Zhengcai;
Wan, Xiangang;
Chen, Yulin;
Song, Fengqi;
Xu, Yongbing;
Wang, Baigeng;
Wang, Guanghou;
Zhang, Rong

Publication type:

Article

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.

Published in:

Advanced Materials, 2016, v. 28, n. 3, p. 547, doi. 10.1002/adma.201503033

By:

Yu, Zhihao;
Ong, Zhun-Yong;
Pan, Yiming;
Cui, Yang;
Xin, Run;
Shi, Yi;
Wang, Baigeng;
Wu, Yun;
Chen, Tangsheng;
Zhang, Yong-Wei;
Zhang, Gang;
Wang, Xinran

Publication type:

Article

Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016).

Published in:

Advanced Materials, 2016, v. 28, n. 3, p. 546, doi. 10.1002/adma.201670019

By:

Yu, Zhihao;
Ong, Zhun-Yong;
Pan, Yiming;
Cui, Yang;
Xin, Run;
Shi, Yi;
Wang, Baigeng;
Wu, Yun;
Chen, Tangsheng;
Zhang, Yong-Wei;
Zhang, Gang;
Wang, Xinran

Publication type:

Article

High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics.

Published in:

Advanced Materials, 2015, v. 27, n. 35, p. 5230, doi. 10.1002/adma.201502222

By:

Cui, Yang;
Xin, Run;
Yu, Zhihao;
Pan, Yiming;
Ong, Zhun-Yong;
Wei, Xiaoxu;
Wang, Junzhuan;
Nan, Haiyan;
Ni, Zhenhua;
Wu, Yun;
Chen, Tangsheng;
Shi, Yi;
Wang, Baigeng;
Zhang, Gang;
Zhang, Yong-Wei;
Wang, Xinran

Publication type:

Article

High-Mobility Sm-Doped Bi2Se3 Ferromagnetic Topological Insulators and Robust Exchange Coupling.

Published in:

Advanced Materials, 2015, v. 27, n. 33, p. 4823, doi. 10.1002/adma.201501254

By:

Chen, Taishi;
Liu, Wenqing;
Zheng, Fubao;
Gao, Ming;
Pan, Xingchen;
van der Laan, Gerrit;
Wang, Xuefeng;
Zhang, Qinfang;
Song, Fengqi;
Wang, Baigeng;
Wang, Baolin;
Xu, Yongbing;
Wang, Guanghou;
Zhang, Rong

Publication type:

Article

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface.

Published in:

Advanced Materials, 2014, v. 26, n. 20, p. 3275, doi. 10.1002/adma.201306028

By:

Qian, Min;
Pan, Yiming;
Liu, Fengyuan;
Wang, Miao;
Shen, Haoliang;
He, Daowei;
Wang, Baigeng;
Shi, Yi;
Miao, Feng;
Wang, Xinran

Publication type:

Article

Weak antilocalization in Cd3As2 thin films.

Published in:

Scientific Reports, 2016, p. 22377, doi. 10.1038/srep22377

By:

Zhao, Bo;
Cheng, Peihong;
Pan, Haiyang;
Zhang, Shuai;
Wang, Baigeng;
Wang, Guanghou;
Xiu, Faxian;
Song, Fengqi

Publication type:

Article

A label-free and portable graphene FET aptasensor for children blood lead detection.

Published in:

Scientific Reports, 2016, p. 21711, doi. 10.1038/srep21711

By:

Wang, Chenyu;
Cui, Xinyi;
Li, Ying;
Li, Hongbo;
Huang, Lei;
Bi, Jun;
Luo, Jun;
Ma, Lena Q.;
Zhou, Wei;
Cao, Yi;
Wang, Baigeng;
Miao, Feng

Publication type:

Article

Universal anyons at the irradiated surface of topological insulator.

Published in:

Scientific Reports, 2016, p. 20075, doi. 10.1038/srep20075

By:

Wang, Rui;
Chen, Wei;
Wang, Baigeng;
Xing, D. Y.

Publication type:

Article

Millimetre-long transport of photogenerated carriers in topological insulators.

Published in:

Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-019-13711-3

By:

Hou, Yasen;
Wang, Rui;
Xiao, Rui;
McClintock, Luke;
Clark Travaglini, Henry;
Paulus Francia, John;
Fetsch, Harry;
Erten, Onur;
Savrasov, Sergey Y.;
Wang, Baigeng;
Rossi, Antonio;
Vishik, Inna;
Rotenberg, Eli;
Yu, Dong

Publication type:

Article

Prediction of a topological p + ip excitonic insulator with parity anomaly.

Published in:

Nature Communications, 2019, v. 10, n. 1, p. 1, doi. 10.1038/s41467-018-08203-9

By:

Wang, Rui;
Erten, Onur;
Wang, Baigeng;
Xing, D. Y.

Publication type:

Article

Works by Wang, Baigeng

The interplay of ferroelectricity and magneto-transport in non-magnetic moiré superlattices.

High Responsivity Phototransistors Based on Few-Layer ReS<sub>2</sub> for Weak Signal Detection.

The study on quantum material WTe<sub>2</sub>.

Andreev reflection in a triple quantum dot system coupled with a normal-metal and a superconductor.

A selector device based on graphene-oxide heterostructures for memristor crossbar applications.

Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets.

The Material Efforts for Quantized Hall Devices Based on Topological Insulators.

Band Structure Perfection and Superconductivity in Type‐II Dirac Semimetal Ir<sub>1−</sub><sub>x</sub>Pt<sub>x</sub>Te<sub>2</sub>.

Effective impurity behavior emergent from non-Hermitian proximity effect.

Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe<sub>2</sub>.

The positive piezoconductive effect in graphene.

Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride.

Integrated digital inverters based on two-dimensional anisotropic ReS<sub>2</sub> field-effect transistors.

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.

Topological transport and atomic tunnelling-clustering dynamics for aged Cu-doped Bi<sub>2</sub>Te<sub>3</sub> crystals.

Saturated Nonsingular Fast Sliding Mode Control for the Crane-Form Pipeline System.

Anomalous quantization trajectory and parity anomaly in Co cluster decorated BiSbTeSe2 nanodevices.

Quantum Electronics: Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS (Adv. Electron. Mater. 10/2016).

Evidence of Both Surface and Bulk Dirac Bands and Anisotropic Nonsaturating Magnetoresistance in ZrSiS.

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening.

Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS<sub>2</sub> by Dielectric and Carrier Screening (Adv. Mater. 3/2016).

High-Performance Monolayer WS<sub>2</sub> Field-Effect Transistors on High-κ Dielectrics.

High-Mobility Sm-Doped Bi<sub>2</sub>Se<sub>3</sub> Ferromagnetic Topological Insulators and Robust Exchange Coupling.

Tunable, Ultralow-Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene-Oxide Interface.

Weak antilocalization in Cd<sub>3</sub>As<sub>2</sub> thin films.

A label-free and portable graphene FET aptasensor for children blood lead detection.

Universal anyons at the irradiated surface of topological insulator.

Millimetre-long transport of photogenerated carriers in topological insulators.

Prediction of a topological p + ip excitonic insulator with parity anomaly.