Works by Wakejima, A.

Results: 27

RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 10, p. 1, doi. 10.1049/ell2.12798

By:

Yuji Ando;
Hidemasa Takahashi;
Ryutaro Makisako;
Akio Wakejima;
Jun Suda

Publication type:

Article

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography.

Published in:

Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 9, p. 1, doi. 10.1049/ell2.12798

By:

Ando, Yuji;
Takahashi, Hidemasa;
Makisako, Ryutaro;
Wakejima, Akio;
Suda, Jun

Publication type:

Article

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 24, p. 948, doi. 10.1049/ell2.12303

By:

Ando, Yuji;
Makisako, Ryutaro;
Takahashi, Hidemasa;
Wakejima, Akio;
Suda, Jun

Publication type:

Article

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 21, p. 810, doi. 10.1049/ell2.12269

By:

Takahashi, Hidemasa;
Ando, Yuji;
Tsuchiya, Yoichi;
Wakejima, Akio;
Hayashi, Hiroaki;
Yagyu, Eiji;
Kikkawa, Koichi;
Sakai, Naoki;
Itoh, Kenji;
Suda, Jun

Publication type:

Article

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2021, v. 57, n. 15, p. 591, doi. 10.1049/ell2.12201

By:

Ma, Qiang;
Ando, Yuji;
Wakejima, Akio

Publication type:

Article

A case of repeat oligoprogressive castration‐resistant prostate cancer treated with pulmonary metastasectomy.

Published in:

2023

By:

Soma, Takahiko;
Yoshida, Soichiro;
Wakejima, Ryo;
Taguchi, Towako;
Fukuda, Shohei;
Tanaka, Hajime;
Yokoyama, Minato;
Ohashi, Kenichi;
Okubo, Kenichi;
Fujii, Yasuhisa

Publication type:

Case Study

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400057

By:

Sugino, Tomoharu;
Osaki, Kenji;
Nonaka, Kentaro;
Sugiyama, Tomohiko;
Kuraoka, Yoshitaka;
Wakejima, Akio

Publication type:

Article

Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200837

By:

Takahashi, Hidemasa;
Ando, Yuji;
Tsuchiya, Yoichi;
Wakejima, Akio;
Suda, Jun

Publication type:

Article

Postoperative Delirium in Lung Cancer Anatomical Resection—Analysis of Risk Factors and Prognosis.

Published in:

World Journal of Surgery, 2022, v. 46, n. 5, p. 1196, doi. 10.1007/s00268-022-06442-y

By:

Ishibashi, Hironori;
Wakejima, Ryo;
Asakawa, Ayaka;
Sugita, Yusuke;
Ishikawa, Yuya;
Hanafusa, Mariko;
Baba, Shunichi;
Nakashima, Yasuhiro;
Seto, Katsutoshi;
Okubo, Kenichi

Publication type:

Article

Postoperative Atrial Fibrillation in Lung Cancer Lobectomy—Analysis of Risk Factors and Prognosis.

Published in:

World Journal of Surgery, 2020, v. 44, n. 11, p. 3952, doi. 10.1007/s00268-020-05694-w

By:

Ishibashi, Hironori;
Wakejima, Ryo;
Asakawa, Ayaka;
Baba, Shunichi;
Nakashima, Yasuhiro;
Seto, Katsutoshi;
Kobayashi, Masashi;
Okubo, Kenichi

Publication type:

Article

P-188 BILATERAL LUNG VENTILATION DURING LOBECTOMY: A LESS INVASIVE METHOD FOR PATIENTS WITH INTERSTITIAL PNEUMONIA.

Published in:

Interactive Cardiovascular & Thoracic Surgery, 2014, v. 18, n. suppl_1, p. S49, doi. 10.1093/icvts/ivu167.188

By:

Ishibashi, H.;
Wakejima, Ryo;
Asakawa, A.;
Seto, K.;
Ui, A.;
Kobayashi, M.;
Okubo, K.

Publication type:

Article

F-067 TREATMENT OF CHRONIC EMPYEMA USING A LAPAROSCOPICALLY PREPARED OMENTAL PEDICLED FLAP.

Published in:

Interactive Cardiovascular & Thoracic Surgery, 2014, v. 18, n. suppl_1, p. S17, doi. 10.1093/icvts/ivu167.67

By:

Ishibashi, Hironori;
Ui, A.;
Asakawa, A.;
Seto, K.;
Wakejima, R.;
Kobayashi, M.;
Okubo, K.

Publication type:

Article

High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1366, doi. 10.1049/el.2015.1395

By:

Christy, P. D.;
Katayama, Y.;
Wakejima, A.;
Egawa, T.

Publication type:

Article

High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1366, doi. 10.1049/el.2015.1395

By:

Christy, P.D.;
Katayama, Y.;
Wakejima, A.;
Egawa, T.

Publication type:

Article

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1162, doi. 10.1049/el.2014.1131

By:

Narita, T.;
Fujimoto, Y.;
Wakejima, A.;
Egawa, T.

Publication type:

Article

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 14, p. 1162, doi. 10.1049/el.2014.1131

By:

Narita, T.;
Fujimoto, Y.;
Wakejima, A.;
Egawa, T.

Publication type:

Article

Prevalence of i.v. thiopental use in psychiatric emergency settings in Japan.

Published in:

Psychiatry & Clinical Neurosciences, 2009, v. 63, n. 5, p. 658, doi. 10.1111/j.1440-1819.2009.02010.x

By:

Hatta, Kotaro;
Nakamura, Mitsuru;
Yoshida, Kenichi;
Hamakawa, Hiroshi;
Wakejima, Toru;
Nishimura, Takao;
Kawabata, Toshitaka;
Hirata, Toyoaki;
Usui, Chie;
Sawa, Yutaka

Publication type:

Article

Extubation by supraglottic airway after lobectomy prevents cough-associated air leaks and prolonged coughing or sore throat.

Published in:

European Journal of Cardio-Thoracic Surgery, 2023, v. 63, n. 5, p. 1, doi. 10.1093/ejcts/ezad158

By:

Ishibashi, Hironori;
Wakejima, Ryo;
Kurihara, Yasuyuki;
Seto, Katsutoshi;
Baba, Shunichi;
Asakawa, Ayaka;
Toyama, Satoshi;
Uchida, Tokujiro;
Okubo, Kenichi

Publication type:

Article

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Published in:

2022

By:

Tanaka, Atsushi;
Sugiura, Ryuji;
Kawaguchi, Daisuke;
Wani, Yotaro;
Watanabe, Hirotaka;
Sena, Hadi;
Ando, Yuto;
Honda, Yoshio;
Igasaki, Yasunori;
Wakejima, Akio;
Ando, Yuji;
Amano, Hiroshi

Publication type:

Correction Notice

Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-10610-4

By:

Tanaka, Atsushi;
Sugiura, Ryuji;
Kawaguchi, Daisuke;
Wani, Yotaro;
Watanabe, Hirotaka;
Sena, Hadi;
Ando, Yuto;
Honda, Yoshio;
Igasaki, Yasunori;
Wakejima, Akio;
Ando, Yuji;
Amano, Hiroshi

Publication type:

Article

Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-10610-4

By:

Tanaka, Atsushi;
Sugiura, Ryuji;
Kawaguchi, Daisuke;
Wani, Yotaro;
Watanabe, Hirotaka;
Sena, Hadi;
Ando, Yuto;
Honda, Yoshio;
Igasaki, Yasunori;
Wakejima, Akio;
Ando, Yuji;
Amano, Hiroshi

Publication type:

Article

Primary pulmonary choriocarcinoma with a genomic sequence.

Published in:

Pathology International, 2022, v. 72, n. 2, p. 141, doi. 10.1111/pin.13193

By:

Onishi, Iichiroh;
Kirimura, Susumu;
Wakejima, Ryo;
Okubo, Kenichi;
Odai, Tamami;
Kakuta, Ryota;
Kano, Yoshihito;
Ikeda, Sadakatsu;
Akashi, Takumi;
Kitagawa, Masanobu

Publication type:

Article

Mucinous lung adenocarcinoma, particularly referring to EGFR‐mutated mucinous adenocarcinoma.

Published in:

Pathology International, 2020, v. 70, n. 2, p. 72, doi. 10.1111/pin.12879

By:

Wakejima, Ryo;
Inamura, Kentaro;
Ninomiya, Hironori;
Nagano, Hiroko;
Mun, Mingyon;
Okumura, Sakae;
Okubo, Kenichi;
Ishikawa, Yuichi

Publication type:

Article

Risk of coronary artery lesions in young infants with Kawasaki disease: need for a new diagnostic method.

Published in:

International Journal of Rheumatic Diseases, 2018, v. 21, n. 3, p. 746, doi. 10.1111/1756-185X.13223

By:

Satoh, Kaoru;
Wakejima, Yoko;
Gau, Maki;
Kiguchi, Tomoyuki;
Matsuda, Nozomi;
Takasawa, Reiko;
Takasawa, Kei;
Nishioka, Masato;
Shimohira, Masayuki

Publication type:

Article

Anatomical position of the corona mortis relative to the anteroposterior and inlet views.

Published in:

European Journal of Orthopaedic Surgery & Traumatology, 2022, v. 32, n. 2, p. 341, doi. 10.1007/s00590-021-02983-5

By:

Wada, Tomoki;
Itoigawa, Yoshiaki;
Wakejima, Tomoko;
Koga, Akihisa;
Ichimura, Koichiro;
Maruyama, Yuichiro;
Ishijima, Muneaki

Publication type:

Article

An AlGaN/GaN field effect diode with a high turn-on voltage controllability.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600830

By:

Kato, Naoki;
Wakejima, Akio;
Osada, Yamato;
Kamimura, Ryuichiro;
Itoh, Kenji;
Egawa, Takashi

Publication type:

Article

Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias-controllable field plate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600840

By:

Mase, Suguru;
Wakejima, Akio;
Egawa, Takashi

Publication type:

Article

Works by Wakejima, A.

RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography.

RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography.

Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper.

Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications.

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate.

A case of repeat oligoprogressive castration‐resistant prostate cancer treated with pulmonary metastasectomy.

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate.

Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications.

Postoperative Delirium in Lung Cancer Anatomical Resection—Analysis of Risk Factors and Prognosis.

Postoperative Atrial Fibrillation in Lung Cancer Lobectomy—Analysis of Risk Factors and Prognosis.

P-188 BILATERAL LUNG VENTILATION DURING LOBECTOMY: A LESS INVASIVE METHOD FOR PATIENTS WITH INTERSTITIAL PNEUMONIA.

F-067 TREATMENT OF CHRONIC EMPYEMA USING A LAPAROSCOPICALLY PREPARED OMENTAL PEDICLED FLAP.

High f<sub>T</sub> and f<sub>MAX</sub> for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate.

High f<sub>T</sub> and f<sub>MAX</sub> for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate.

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs.

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTs.

Prevalence of i.v. thiopental use in psychiatric emergency settings in Japan.

Extubation by supraglottic airway after lobectomy prevents cough-associated air leaks and prolonged coughing or sore throat.

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Primary pulmonary choriocarcinoma with a genomic sequence.

Mucinous lung adenocarcinoma, particularly referring to EGFR‐mutated mucinous adenocarcinoma.

Risk of coronary artery lesions in young infants with Kawasaki disease: need for a new diagnostic method.

Anatomical position of the corona mortis relative to the anteroposterior and inlet views.

An AlGaN/GaN field effect diode with a high turn-on voltage controllability.

Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias-controllable field plate.