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Determination of the parameters of deep levels using the differential coefficients of the current–voltage characteristics.
- Published in:
- Technical Physics Letters, 1999, v. 25, n. 3, p. 176, doi. 10.1134/1.1262412
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- Article
Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films.
- Published in:
- Semiconductors, 2002, v. 36, n. 3, p. 265, doi. 10.1134/1.1461400
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- Article
Fine Structure of the Edge Ultraviolet Luminescence of GaN:Mg Films Activated in a Nitrogen Plasma and the Electroluminescence of a ZnO–GaN:Mg Heterostructure Based on These Films.
- Published in:
- Semiconductors, 2001, v. 35, n. 6, p. 695, doi. 10.1134/1.1379407
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- Article
The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma.
- Published in:
- Semiconductors, 2001, v. 35, n. 2, p. 144, doi. 10.1134/1.1349920
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- Article
Deep-level recombination spectroscopy in GaP light-emitting diodes.
- Published in:
- Semiconductors, 1999, v. 33, n. 6, p. 668, doi. 10.1134/1.1187753
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- Article