Inelastic Scattering in Weak Localization for Single‐Layer Graphene.
- Published in:
- Physica Status Solidi (B), 2025, v. 262, n. 7, p. 1, doi. 10.1002/pssb.202400536
- By:
- Publication type:
- Article
Works by Vogel, Eric M.
Results: 8
1
2
Highly Uniform Trilayer Molybdenum Disulfide for Wafer-Scale Device Fabrication.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 40, p. 6389, doi. 10.1002/adfm.201401389
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- Publication type:
- Article
3
Technology and metrology of new electronic materials and devices.
- Published in:
- Nature Nanotechnology, 2007, v. 2, n. 1, p. 25, doi. 10.1038/nnano.2006.142
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- Publication type:
- Article
4
Logic Gates and Ring Oscillators Based on Ambipolar Nanocrystalline-Silicon TFTs.
- Published in:
- Active & Passive Electronic Components, 2013, p. 1, doi. 10.1155/2013/525017
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- Publication type:
- Article
5
Impact of oxygen concentration at the HfO<sub>x</sub>/Ti interface on the behavior of HfO<sub>x</sub> filamentary memristors.
- Published in:
- Journal of Materials Science, 2022, v. 57, n. 20, p. 9299, doi. 10.1007/s10853-022-07067-1
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- Publication type:
- Article
6
MAX Phase Ti<sub>2</sub>AlN for HfO<sub>2</sub> Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratio.
- Published in:
- Advanced Functional Materials, 2024, v. 34, n. 29, p. 1, doi. 10.1002/adfm.202316290
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- Publication type:
- Article
7
Disorder and Weak Localization near Charge Neutral Point in Ti‐cleaned Single‐Layer Graphene.
- Published in:
- Physica Status Solidi (B), 2019, v. 256, n. 6, p. N.PAG, doi. 10.1002/pssb.201800541
- By:
- Publication type:
- Article
8
Controlled Doping of Large-Area Trilayer MoS<sub>2</sub> with Molecular Reductants and Oxidants.
- Published in:
- Advanced Materials, 2015, v. 27, n. 7, p. 1175, doi. 10.1002/adma.201404578
- By:
- Publication type:
- Article