Works by Voelskow, M.

Results: 16

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots.
Published in:
Journal of Experimental & Theoretical Physics, 2019, v. 128, n. 2, p. 303, doi. 10.1134/S1063776119020067
By:
- Erenburg, S. B.;
- Trubina, S. V.;
- Zvereva, V. A.;
- Zinoviev, V. A.;
- Katsyuba, A. V.;
- Dvurechenskii, A. V.;
- Kvashnina, K.;
- Voelskow, M.
Publication type:
Article
Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling.
Published in:
Journal of Low Temperature Physics, 2015, v. 180, n. 5/6, p. 342, doi. 10.1007/s10909-015-1318-6
By:
- Heera, V.;
- Fiedler, J.;
- Schmidt, B.;
- Hübner, R.;
- Voelskow, M.;
- Skrotzki, R.;
- Skorupa, W.
Publication type:
Article
Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions.
Published in:
Semiconductors, 2021, v. 55, n. 3, p. 289, doi. 10.1134/S1063782621030179
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Si, Zh.;
- Popov, V. P.
Publication type:
Article
Diffusion and Interaction of In and As Implanted into SiO<sub>2</sub> Films.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1004, doi. 10.1134/S1063782619080190
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Mikhaylov, A. N.;
- Tetelbaum, D. I.
Publication type:
Article
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.
Published in:
Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226
By:
- Tyschenko, I.;
- Cherkov, A.;
- Volodin, V.;
- Voelskow, M.
Publication type:
Article
Ion-beam synthesis of InSb nanocrystals in the buried SiO layer of a silicon-on-insulator structure.
Published in:
Semiconductors, 2014, v. 48, n. 9, p. 1196, doi. 10.1134/S1063782614090231
By:
- Tyschenko, I.;
- Voelskow, M.;
- Cherkov, A.;
- Popov, V.
Publication type:
Article
Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions.
Published in:
Semiconductors, 2013, v. 47, n. 5, p. 606, doi. 10.1134/S1063782613050229
By:
- Tyschenko, I.;
- Volodin, V.;
- Voelskow, M.;
- Cherkov, A.;
- Popov, V.
Publication type:
Article
Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots.
Published in:
JETP Letters, 2019, v. 109, n. 4, p. 270, doi. 10.1134/S0021364019040143
By:
- Zinovieva, A. F.;
- Zinovyev, V. A.;
- Stepina, N. P.;
- Katsuba, A. V.;
- Dvurechenskii, A. V.;
- Gutakovskii, A. K.;
- Kulik, L. V.;
- Bogomyakov, A. S.;
- Erenburg, S. B.;
- Trubina, S. V.;
- Voelskow, M.
Publication type:
Article
High-temperature high-dose implantation of N[sup +] and Al[sup +] ions in 6H–SiC.
Published in:
Technical Physics Letters, 1997, v. 23, n. 8, p. 617, doi. 10.1134/1.1261883
By:
- Yankov, R. A.;
- Voelskow, M.;
- Kreissig, W.;
- Kulikov, D. V.;
- Pezoldt, J.;
- Skorupa, W.;
- Trushin, Yu. V.;
- Kharlamov, V. S.;
- Tsigankov, D. N.
Publication type:
Article
Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation.
Published in:
Applied Physics A: Materials Science & Processing, 2000, v. 71, n. 2, p. 175
By:
- Teichert, J.;
- Bischoff, L.;
- Hausmann, S.;
- Voelskow, M.;
- Hobert, H.
Publication type:
Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
By:
- Tiagulskyi, S. I.;
- Nazarov, A. N.;
- Gordienko, S. O.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Nazarova, T. M.;
- Gomeniuk, Yu. V.;
- Rudko, G. V.;
- Lysenko, V. S.;
- Rebohle, L.;
- Voelskow, M.;
- Skorupa, W.;
- Koshka, Y.
Publication type:
Article
Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer.
Published in:
Semiconductors, 2009, v. 43, n. 1, p. 52, doi. 10.1134/S1063782609010114
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Cherkov, A. G.;
- Popov, V. P.
Publication type:
Article
Behavior of germanium ion-implanted into SiO<sub>2</sub> near the bonding interface of a silicon-on-insulator structure.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 291, doi. 10.1134/S1063782607030104
By:
- Tyschenko, I. E.;
- Voelskow, M.;
- Cherkov, A. G.;
- Popov, V. P.
Publication type:
Article
Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film.
Published in:
Semiconductors, 2003, v. 37, n. 11, p. 1321, doi. 10.1134/1.1626217
By:
- Bagaev, E. A.;
- Zhuravlev, K. S.;
- Sveshnikova, L. L.;
- Badmaeva, I. A.;
- Repinski&ibreve;, S. M.;
- Voelskow, M.
Publication type:
Article
Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.
Published in:
Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469
By:
- Tyschenko, I. E.;
- Talochkin, A. B.;
- Cherkov, A. G.;
- Zhuravlev, K. S.;
- Misiuk, A.;
- Voelskow, M.;
- Skorupa, W.
Publication type:
Article
Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944
By:
- Kachurin, G. A.;
- Rebohle, L.;
- Tyschenko, I. E.;
- Volodin, V. A.;
- Voelskow, M.;
- Skorupa, W.;
- Froeb, H.
Publication type:
Article