Works by Voelskow, M.

Results: 16

Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944

By:

Kachurin, G. A.;
Rebohle, L.;
Tyschenko, I. E.;
Volodin, V. A.;
Voelskow, M.;
Skorupa, W.;
Froeb, H.

Publication type:

Article

Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation.

Published in:

Applied Physics A: Materials Science & Processing, 2000, v. 71, n. 2, p. 175

By:

Teichert, J.;
Bischoff, L.;
Hausmann, S.;
Voelskow, M.;
Hobert, H.

Publication type:

Article

Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots.

Published in:

JETP Letters, 2019, v. 109, n. 4, p. 270, doi. 10.1134/S0021364019040143

By:

Zinovieva, A. F.;
Zinovyev, V. A.;
Stepina, N. P.;
Katsuba, A. V.;
Dvurechenskii, A. V.;
Gutakovskii, A. K.;
Kulik, L. V.;
Bogomyakov, A. S.;
Erenburg, S. B.;
Trubina, S. V.;
Voelskow, M.

Publication type:

Article

Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling.

Published in:

Journal of Low Temperature Physics, 2015, v. 180, n. 5/6, p. 342, doi. 10.1007/s10909-015-1318-6

By:

Heera, V.;
Fiedler, J.;
Schmidt, B.;
Hübner, R.;
Voelskow, M.;
Skrotzki, R.;
Skorupa, W.

Publication type:

Article

Diffusion of In Atoms in SiO2 Films Implanted with As+ Ions.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 289, doi. 10.1134/S1063782621030179

By:

Tyschenko, I. E.;
Voelskow, M.;
Si, Zh.;
Popov, V. P.

Publication type:

Article

Diffusion and Interaction of In and As Implanted into SiO<sub>2</sub> Films.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1004, doi. 10.1134/S1063782619080190

By:

Tyschenko, I. E.;
Voelskow, M.;
Mikhaylov, A. N.;
Tetelbaum, D. I.

Publication type:

Article

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226

By:

Tyschenko, I.;
Cherkov, A.;
Volodin, V.;
Voelskow, M.

Publication type:

Article

Ion-beam synthesis of InSb nanocrystals in the buried SiO layer of a silicon-on-insulator structure.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1196, doi. 10.1134/S1063782614090231

By:

Tyschenko, I.;
Voelskow, M.;
Cherkov, A.;
Popov, V.

Publication type:

Article

Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions.

Published in:

Semiconductors, 2013, v. 47, n. 5, p. 606, doi. 10.1134/S1063782613050229

By:

Tyschenko, I.;
Volodin, V.;
Voelskow, M.;
Cherkov, A.;
Popov, V.

Publication type:

Article

Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 52, doi. 10.1134/S1063782609010114

By:

Tyschenko, I. E.;
Voelskow, M.;
Cherkov, A. G.;
Popov, V. P.

Publication type:

Article

Behavior of germanium ion-implanted into SiO<sub>2</sub> near the bonding interface of a silicon-on-insulator structure.

Published in:

Semiconductors, 2007, v. 41, n. 3, p. 291, doi. 10.1134/S1063782607030104

By:

Tyschenko, I. E.;
Voelskow, M.;
Cherkov, A. G.;
Popov, V. P.

Publication type:

Article

Photoluminescence from Cadmium Sulfide Nanoclusters Formed in the Matrix of a Langmuir–Blodgett Film.

Published in:

Semiconductors, 2003, v. 37, n. 11, p. 1321, doi. 10.1134/1.1626217

By:

Bagaev, E. A.;
Zhuravlev, K. S.;
Sveshnikova, L. L.;
Badmaeva, I. A.;
Repinski&ibreve;, S. M.;
Voelskow, M.

Publication type:

Article

Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.

Published in:

Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469

By:

Tyschenko, I. E.;
Talochkin, A. B.;
Cherkov, A. G.;
Zhuravlev, K. S.;
Misiuk, A.;
Voelskow, M.;
Skorupa, W.

Publication type:

Article

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34

By:

Tiagulskyi, S. I.;
Nazarov, A. N.;
Gordienko, S. O.;
Vasin, A. V.;
Rusavsky, A. V.;
Nazarova, T. M.;
Gomeniuk, Yu. V.;
Rudko, G. V.;
Lysenko, V. S.;
Rebohle, L.;
Voelskow, M.;
Skorupa, W.;
Koshka, Y.

Publication type:

Article

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots.

Published in:

Journal of Experimental & Theoretical Physics, 2019, v. 128, n. 2, p. 303, doi. 10.1134/S1063776119020067

By:

Erenburg, S. B.;
Trubina, S. V.;
Zvereva, V. A.;
Zinoviev, V. A.;
Katsyuba, A. V.;
Dvurechenskii, A. V.;
Kvashnina, K.;
Voelskow, M.

Publication type:

Article

High-temperature high-dose implantation of N[sup +] and Al[sup +] ions in 6H–SiC.

Published in:

Technical Physics Letters, 1997, v. 23, n. 8, p. 617, doi. 10.1134/1.1261883

By:

Yankov, R. A.;
Voelskow, M.;
Kreissig, W.;
Kulikov, D. V.;
Pezoldt, J.;
Skorupa, W.;
Trushin, Yu. V.;
Kharlamov, V. S.;
Tsigankov, D. N.

Publication type:

Article