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Magneto-Optical and Micromagnetic Properties of Ferromagnet/Heavy Metal Thin Film Structures.
- Published in:
- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400192
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- Article
FORMATION OF MAGNETIC GaAs:Mn LAYERS FOR InGaAs/GaAs LIGHT EMITTING QUANTUM-SIZE STRUCTURES.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 221, doi. 10.1142/S0219581X07004614
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- Article
Fabrication and Study of the Properties of GaAs Layers Doped with Bismuth.
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- Semiconductors, 2024, v. 58, n. 4, p. 368, doi. 10.1134/S1063782624040171
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- Article
Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures.
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- Semiconductors, 2020, v. 54, n. 12, p. 1598, doi. 10.1134/S1063782620120428
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- Article
Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells.
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- Semiconductors, 2020, v. 54, n. 10, p. 1341, doi. 10.1134/S1063782620100061
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- Article
Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
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- Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
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- Article
Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy.
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- Semiconductors, 2020, v. 54, n. 8, p. 956, doi. 10.1134/S106378262008028X
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- Article
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures.
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- Semiconductors, 2019, v. 53, n. 9, p. 1207, doi. 10.1134/S1063782619090148
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- Article
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition.
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- Semiconductors, 2019, v. 53, n. 3, p. 332, doi. 10.1134/S1063782619030230
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- Article
The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.
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- Semiconductors, 2018, v. 52, n. 11, p. 1398, doi. 10.1134/S1063782618110106
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Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots.
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- Semiconductors, 2013, v. 47, n. 12, p. 1583, doi. 10.1134/S106378261312021X
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- Article
Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well.
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- Semiconductors, 2013, v. 47, n. 9, p. 1219, doi. 10.1134/S1063782613090261
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- Article
Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-43741-2
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- Article
Methods for Switching Radiation Polarization in GaAs Laser Diodes.
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- Technical Physics, 2022, v. 66, n. 4, p. 1194, doi. 10.1134/S106378422109005X
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- Article
Methods for Switching Radiation Polarization in GaAs Laser Diodes.
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- Technical Physics, 2021, v. 66, n. 11, p. 1194, doi. 10.1134/S106378422109005X
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- Article
Formation of Magnetic Nanostructures Using an Atomic Force Microscope Probe.
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- Technical Physics, 2019, v. 64, n. 11, p. 1716, doi. 10.1134/S1063784219110288
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- Article
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
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- Article
Anisotropic magnetoresistance and planar hall effect in GaAs structure with Mn-delta-doped layer.
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- Technical Physics Letters, 2010, v. 36, n. 6, p. 511, doi. 10.1134/S1063785010060076
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- Article
Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation.
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- Technical Physics Letters, 2010, v. 36, n. 2, p. 189, doi. 10.1134/S1063785010020288
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- Article
Ferromagnetism in GaAs structures with Mn-delta-doped layers.
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- Technical Physics Letters, 2009, v. 35, n. 7, p. 643, doi. 10.1134/S1063785009070165
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- Article
The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures.
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- Optics & Spectroscopy, 2020, v. 128, n. 3, p. 387, doi. 10.1134/S0030400X20030030
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- Article
Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well.
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- JETP Letters, 2010, v. 91, n. 6, p. 292, doi. 10.1134/S002136401006007X
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- Article
Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well.
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- JETP Letters, 2010, v. 90, n. 10, p. 658, doi. 10.1134/S0021364009220056
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- Article
Magnetic properties of GaAs/δ〈Mn〉/GaAs/In<sub> x </sub>Ga<sub>1 − x </sub>As/GaAs quantum wells.
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- JETP Letters, 2008, v. 87, n. 3, p. 164, doi. 10.1134/S0021364008030107
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- Article
Anomalous hall effect in Mn δ-doped GaAs/In<sub>0.17</sub>Ga<sub>0.83</sub>As/GaAs quantum wells with high hole mobility.
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- JETP Letters, 2007, v. 85, n. 1, p. 27, doi. 10.1134/S0021364007010067
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- Article
Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures.
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- Scientific Reports, 2016, p. 24537, doi. 10.1038/srep24537
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- Article