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CHANGES IN THE COMPETENCE REQUIREMENTS FOR LEADERS IN TOURISM AND HOSPITALITY: FORECASTS AND ASSESSMENT OF THEIR REASONABILITY.
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- Journal of Positive School Psychology, 2022, v. 6, n. 2, p. 5677
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Methods for Switching Radiation Polarization in GaAs Laser Diodes.
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- Technical Physics, 2022, v. 66, n. 4, p. 1194, doi. 10.1134/S106378422109005X
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Methods for Switching Radiation Polarization in GaAs Laser Diodes.
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- Technical Physics, 2021, v. 66, n. 11, p. 1194, doi. 10.1134/S106378422109005X
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Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures.
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- Semiconductors, 2020, v. 54, n. 12, p. 1598, doi. 10.1134/S1063782620120428
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Research on the impact of the covid-19 pandemic on global economic processes.
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- International Journal of Pharmaceutical Research (09752366), 2020, v. 12, n. 4, p. 3062, doi. 10.31838/ijpr/2020.12.04.421
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Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells.
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- Semiconductors, 2020, v. 54, n. 10, p. 1341, doi. 10.1134/S1063782620100061
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Carbon Films Produced by the Pulsed Laser Method and Their Influence on the Properties of GaAs Structures.
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- Semiconductors, 2020, v. 54, n. 9, p. 1059, doi. 10.1134/S1063782620090079
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Formation of Carbon Layers by the Thermal Decomposition of Carbon Tetrachloride in a Reactor for MOCVD Epitaxy.
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- Semiconductors, 2020, v. 54, n. 8, p. 956, doi. 10.1134/S106378262008028X
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The Use of Films of Multilayer Graphene as Coatings of Light-Emitting GaAs Structures.
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- Optics & Spectroscopy, 2020, v. 128, n. 3, p. 387, doi. 10.1134/S0030400X20030030
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Formation of Magnetic Nanostructures Using an Atomic Force Microscope Probe.
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- Technical Physics, 2019, v. 64, n. 11, p. 1716, doi. 10.1134/S1063784219110288
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On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures.
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- Semiconductors, 2019, v. 53, n. 9, p. 1207, doi. 10.1134/S1063782619090148
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Magneto-Optical and Micromagnetic Properties of Ferromagnet/Heavy Metal Thin Film Structures.
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- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400192
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Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-43741-2
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Usage of regions' innovative activity assessment results for the National Cluster Policy development.
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- Dilemas Contemporáneos: Educación, Política y Valores, 2019, v. 6, p. 1
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Assessment of competitiveness of subjects of the market of Telecommunication Services.
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- Dilemas Contemporáneos: Educación, Política y Valores, 2019, v. 6, p. 1
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Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition.
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- Semiconductors, 2019, v. 53, n. 3, p. 332, doi. 10.1134/S1063782619030230
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Assessment of the Socio-Economic Impact of the Implementation of Regional Environmental Programs for Waste Management.
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- Ekoloji Dergisi, 2019, n. 107, p. 267
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The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures.
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- Semiconductors, 2018, v. 52, n. 11, p. 1398, doi. 10.1134/S1063782618110106
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Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
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- Technical Physics Letters, 2018, v. 44, n. 8, p. 735, doi. 10.1134/S1063785018080175
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Socio-environmental aspects of the waste recycling organization.
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- EurAsian Journal of Biosciences, 2018, v. 12, n. 2, p. 527
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Optical thyristor based on GaAs/InGaP materials.
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- Semiconductors, 2017, v. 51, n. 11, p. 1391, doi. 10.1134/S1063782617110306
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Features of the selective manganese doping of GaAs structures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148
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Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1456, doi. 10.1134/S1063782617110239
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Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well.
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- Semiconductors, 2017, v. 51, n. 10, p. 1360, doi. 10.1134/S1063782617100086
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Effect of active-region 'volume' on the radiative properties of laser heterostructures with radiation output through the substrate.
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- Semiconductors, 2017, v. 51, n. 1, p. 73, doi. 10.1134/S1063782617010158
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Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates.
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- Semiconductors, 2016, v. 50, n. 11, p. 1435, doi. 10.1134/S1063782616110269
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Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn.
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- Semiconductors, 2016, v. 50, n. 11, p. 1469, doi. 10.1134/S1063782616110129
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Study of the structures of cleaved cross sections by Raman spectroscopy.
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- Semiconductors, 2016, v. 50, n. 11, p. 1539, doi. 10.1134/S106378261611021X
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Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate.
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- Semiconductors, 2016, v. 50, n. 5, p. 586, doi. 10.1134/S106378261605002X
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Optically controlled spin-polarization memory effect on Mn delta-doped heterostructures.
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- Scientific Reports, 2016, p. 24537, doi. 10.1038/srep24537
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GaAs structures with a gate dielectric based on aluminum-oxide layers.
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- Semiconductors, 2016, v. 50, n. 2, p. 204, doi. 10.1134/S106378261602010X
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Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer.
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- Semiconductors, 2016, v. 50, n. 1, p. 1, doi. 10.1134/S106378261601019X
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CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures.
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- Semiconductors, 2015, v. 49, n. 12, p. 1601, doi. 10.1134/S106378261512026X
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Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity.
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- Semiconductors, 2015, v. 49, n. 11, p. 1430, doi. 10.1134/S106378261511010X
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Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutrons.
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- Semiconductors, 2015, v. 49, n. 3, p. 358, doi. 10.1134/S1063782615030057
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Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium.
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- Semiconductors, 2015, v. 49, n. 1, p. 1, doi. 10.1134/S1063782615010182
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Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.
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- Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054
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Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn.
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- Semiconductors, 2015, v. 49, n. 1, p. 99, doi. 10.1134/S1063782615010200
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Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition.
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- Semiconductors, 2015, v. 49, n. 1, p. 109, doi. 10.1134/S1063782615010285
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The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures.
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- Technical Physics Letters, 2014, v. 40, n. 10, p. 930, doi. 10.1134/S1063785014100290
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Optoelectronic properties of heteronanostructures with combined layers of In(Ga)As/GaAs quantum wells and dots.
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- Semiconductors, 2013, v. 47, n. 12, p. 1583, doi. 10.1134/S106378261312021X
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Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm.
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- Semiconductors, 2013, v. 47, n. 11, p. 1504, doi. 10.1134/S1063782613110158
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Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well.
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- Semiconductors, 2013, v. 47, n. 9, p. 1219, doi. 10.1134/S1063782613090261
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Fabrication and properties of GaAsSb/GaAs heterostructures doped with a magnetic impurity.
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- Semiconductors, 2012, v. 46, n. 12, p. 1493, doi. 10.1134/S106378261212024X
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Composition and structural perfection of (A,Mn)B and MnB (A = Ga, In; B = Sb, As, P) nanolayers.
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- Inorganic Materials, 2012, v. 48, n. 6, p. 553, doi. 10.1134/S0020168512050044
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Manganese diffusion in ingaas/gaas quantum well structures.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 3, p. 508, doi. 10.1134/S1027451012060249
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Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors.
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- Semiconductors, 2010, v. 44, n. 11, p. 1398, doi. 10.1134/S1063782610110035
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Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation.
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- Semiconductors, 2010, v. 44, n. 11, p. 1446, doi. 10.1134/S1063782610110138
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Anisotropic magnetoresistance and planar hall effect in GaAs structure with Mn-delta-doped layer.
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- Technical Physics Letters, 2010, v. 36, n. 6, p. 511, doi. 10.1134/S1063785010060076
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Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well.
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- JETP Letters, 2010, v. 91, n. 6, p. 292, doi. 10.1134/S002136401006007X
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