Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing.
- Published in:
- Semiconductors, 1997, v. 31, n. 2, p. 189, doi. 10.1134/1.1187105
- By:
- Publication type:
- Article
Works by Verbitskaya, E. M.
Results: 7
1
2
Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions.
- Published in:
- Semiconductors, 2023, v. 57, n. 12, p. 531, doi. 10.1134/S1063782623080043
- By:
- Publication type:
- Article
3
Intersegment resistance in silicon p— n-Junction position-sensitive detectors.
- Published in:
- Semiconductors, 2009, v. 43, n. 6, p. 796, doi. 10.1134/S1063782609060207
- By:
- Publication type:
- Article
4
Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide.
- Published in:
- Semiconductors, 2004, v. 38, n. 4, p. 472, doi. 10.1134/1.1734677
- By:
- Publication type:
- Article
5
Applicability of Simulated Precipitation for the Rainfall Flood Forecasting in the Amur Basin.
- Published in:
- Russian Meteorology & Hydrology, 2024, v. 49, n. 1, p. 17, doi. 10.3103/S1068373924010035
- By:
- Publication type:
- Article
6
A Numerical Study of Intense Convection That Caused the Tornado in Blagoveshchensk on July 31, 2011.
- Published in:
- Russian Meteorology & Hydrology, 2020, v. 45, n. 6, p. 403, doi. 10.3103/S1068373920060035
- By:
- Publication type:
- Article
7
Tornado in the City of Blagoveshchensk on July 31, 2011.
- Published in:
- Russian Meteorology & Hydrology, 2018, v. 43, n. 9, p. 574, doi. 10.3103/S1068373918090030
- By:
- Publication type:
- Article