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Polarization-Modulation Spectroscopy of Linear Dichroism in Uniaxially Deformed Silicon Crystals.
Published in:
Optics & Spectroscopy, 2003, v. 94, n. 1, p. 33, doi. 10.1134/1.1540197
By:
- Venger, E. F.;
- Matyash, I. E.;
- Serdega, B. K.
Publication type:
Article
Effect of Nonreciprocity in the State of Polarization of an Electromagnetic Wave Traveling in an Inhomogeneously Anisotropic Crystal.
Published in:
Optics & Spectroscopy, 2000, v. 89, n. 5, p. 746, doi. 10.1134/1.1328132
By:
- Venger, E. F.;
- Popov, V. B.;
- Serdega, B. K.;
- Shinkar, V. V.
Publication type:
Article
Spectroscopy of electroreflection, the electron band structure, and the mechanism of visible photoluminescence of anisotropically etched silicon.
Published in:
Journal of Experimental & Theoretical Physics, 1999, v. 89, n. 5, p. 948, doi. 10.1134/1.558936
By:
- Venger, E. F.;
- Gorbach, T. Ya.;
- Matveeva, L. A.;
- Svechnikov, S. V.
Publication type:
Article
Disorder impact on the optical absorption edge of the tetragonal cadmium diphosphide.
Published in:
Applied Nanoscience, 2019, v. 9, n. 5, p. 1127, doi. 10.1007/s13204-018-0828-3
By:
- Shportko, K. V.;
- Venger, E. F.
Publication type:
Article
Narrow-band controllable sources of IR emission based on one-dimensional magneto-optical photonic structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 180, doi. 10.15407/spqeo26.02.180
By:
- Venger, E. F.;
- Morozhenko, V. O.
Publication type:
Article
Diagnostics of cattle leucosis by using a biosensor based on surface plasmon resonance phenomenon.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 111, doi. 10.15407/spqeo22.01.111
By:
- Klestova, Z. S.;
- Yuschenko, A. Yu.;
- Dremukh, Yu. Yu.;
- Blotska, O. F.;
- Venger, E. F.;
- Dorozinsky, G. V.;
- Kravchenko, S. O.;
- Ushenin, Yu. V.;
- Kachur, N. V.;
- Maslov, V. P.
Publication type:
Article
Optical properties of ternary alloys MgZnO in infrared spectrum.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 417, doi. 10.15407/spqeo21.04.417
By:
- Venger, E. F.;
- Venger, I. V.;
- Korsunska, N. O.;
- Melnichuk, L. Yu.;
- Melnichuk, O. V.;
- Khomenkova, L. Yu.
Publication type:
Article
Quantum-size effects in semiconductor heterosystems.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 224, doi. 10.15407/spqeo20.02.224
By:
- Matveeva, L. A.;
- Venger, E. F.;
- Kolyadina, E. Yu.;
- Neluba, P. L.
Publication type:
Article
Quantum-size effects in semiconductor heterosystems.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 224, doi. 10.15407/spqeo20.02.224
By:
- Matveeva, L. A.;
- Venger, E. F.;
- Kolyadina, E. Yu.;
- Neluba, P. L.
Publication type:
Article
Surface polariton excitation in ZnO films deposited using ALD.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 422, doi. 10.15407/spqeo18.04.422
By:
- Venger, E. F.;
- Melnichuk, L. Yu.;
- Melnichuk, A. V.;
- Semikina, T. V.
Publication type:
Article
On the dielectric approximation in the additional light waves theory: an historical rehabilitation (recovery).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 255, doi. 10.15407/spqeo18.03.255
By:
- Piskovoi, V. N.;
- Venger, E. F.
Publication type:
Article
Analysis of the fundamental absorption edge of the films obtained from the C60 fullerene molecular beam in vacuum and effect of internal mechanical stresses on it.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 349, doi. 10.15407/spqeo18.03.349
By:
- Kolyadina, E. Yu.;
- Matveeva, L. A.;
- Neluba, P. L.;
- Venger, E. F.
Publication type:
Article
Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 195
By:
- Dvoynenko, M. M.;
- Kazantseva, Z. I.;
- Strelchuk, V. V.;
- Kolomys, O. F.;
- Bortshagovsky, E. G.;
- Venger, E. F.;
- Tronc, P.
Publication type:
Article
Effect of strong magnetic field on surface polaritons in ZnO.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 314, doi. 10.15407/spqeo13.03.314
By:
- Venger, E. F.;
- Ievtushenko, A. I.;
- Melnichuk, L. Yu.;
- Melnichuk, O. V.
Publication type:
Article
Study of diamond-like carbon films doped with transition metals and used as cathodes for current creation in water.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 2, p. 136, doi. 10.15407/spqeo11.02.136
By:
- Primachenko, V. E.;
- Lukjanov, A. N.;
- Kirillova, S. I.;
- Chernobay, V. A.;
- Venger, E. F.
Publication type:
Article
Investigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral range.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 1, p. 6, doi. 10.15407/spqeo11.01.006
By:
- Venger, E. F.;
- Evtushenko, A. I.;
- Melnichuk, L. Yu.;
- Melnichuk, O. V.
Publication type:
Article
Coherent thermal radiation of Fabry-Perot resonator structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 94
By:
- Kollyukh, O. G.;
- Kyslyi, V. P.;
- Liptuga, A. I.;
- Morozhenko, V.;
- Pipa, V. I.;
- Venger, E. F.
Publication type:
Article
Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 6, doi. 10.15407/spqeo10.03.006
By:
- Primachenko, V. E.;
- Fedorenko, L. L.;
- Tsyrkunov, Yu. A.;
- Zinio, S. A.;
- Kirillova, S. I.;
- Chernobai, V. A.;
- Venger, E. F.
Publication type:
Article
Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 40, doi. 10.15407/spqeo10.02.040
By:
- Primachenko, V. E.;
- Serba, O. A.;
- Chernobai, V. A.;
- Venger, E. F.
Publication type:
Article
Effect of oxidation of catalytically active silicon-based electrodes on water decomposition.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 1, p. 88, doi. 10.15407/spqeo10.01.088
By:
- Primachenko, V. E.;
- Serba, O. A.;
- Chernobai, V. A.;
- Venger, E. F.
Publication type:
Article
Synthesis and properties of semiconductor solid solutions (InSb)1-x(CdTe)x.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 80, doi. 10.15407/spqeo9.02.080
By:
- Venger, E. F.;
- Knorozok, L. M.;
- Melnichuk, L. Yu.;
- Melnichuk, O. V.
Publication type:
Article
Electron states at the Si-SiO2 boundary (Review).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 38
By:
- Primachenko, V. E.;
- Kirillova, S. I.;
- Chernobai, V. A.;
- Venger, E. F.
Publication type:
Article
Zn and Mn impurity effect on electron and luminescent properties of porous silicon.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 5
By:
- Primachenko, V. E.;
- Kirillova, S. I.;
- Manoilov, E. G.;
- Kizyak, I. M.;
- Bulakh, B. M.;
- Chernobai, V. A.;
- Venger, E. F.
Publication type:
Article
Spectra of the photo-electric phenomena physically differentiated on the light absorption factor.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 4, p. 441
By:
- Berezhinsky, L. I.;
- Venger, E. F.;
- Matyash, I. E.;
- Serdega, B. K.
Publication type:
Article
The features of phonon component of linear dichroism in uniaxially strained silicon crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 319, doi. 10.15407/spqeo6.03.319
By:
- Serdega, B. K.;
- Venger, E. F.;
- Matyash, I. E.
Publication type:
Article
Selective and Wideband UV Sensors.
Published in:
Technical Physics Letters, 2002, v. 28, n. 10, p. 810, doi. 10.1134/1.1519014
By:
- Komashchenko, V. N.;
- Kolezhuk, K. V.;
- Venger, E. F.;
- Sheremetova, G. I.;
- Mishchuk, O. A.;
- Komashchenko, A. V.
Publication type:
Article
Features of the Long-Term Photo EMF Relaxation in a Heteroepitaxial ZnSe–GaAs Structure.
Published in:
Technical Physics Letters, 2000, v. 26, n. 3, p. 190, doi. 10.1134/1.1262788
By:
- Shekhovtsov, L. V.;
- Venger, E. F.;
- Semenova, G. N.;
- Sadof’ev, Yu. G.;
- Korsunskaya, N. E.;
- Semtsiv, M. P.;
- Sapko, S. Yu.
Publication type:
Article
Long-term relaxation of the photovoltage in a heteroepitaxial structure.
Published in:
Technical Physics Letters, 1997, v. 23, n. 6, p. 430, doi. 10.1134/1.1261702
By:
- Shekhovtsov, L. V.;
- Semenova, G. N.;
- Venger, E. F.;
- Sachenko, A. V.;
- Sadof’ev, Yu. G.
Publication type:
Article
Relationship between the electronic properties of the interface and the interphase interactions in NbN–GaAs heterostructures.
Published in:
Technical Physics, 1998, v. 43, n. 1, p. 56, doi. 10.1134/1.1258936
By:
- Belyaev, A. A.;
- Venger, E. F.;
- Lyapin, V. G.;
- Konakova, R. V.;
- Milenin, V. V.;
- Tkhorik, Yu. A.;
- Hotovy, I.;
- Kashin, G. N.
Publication type:
Article
Study of the layer-substrate interface in nc-Si-SiO- p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage.
Published in:
Semiconductors, 2010, v. 44, n. 9, p. 1187, doi. 10.1134/S1063782610090150
By:
- Venger, E. F.;
- Kirillova, S. I.;
- Korsunska, N. E.;
- Stara, T. R.;
- Khomenkova, L. Yu.;
- Sachenko, A. V.;
- Goldstein, Y.;
- Savir, E.;
- Jedrzejewski, J.
Publication type:
Article
The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd x Hg1− x Te.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 266, doi. 10.1134/S1063782607030049
By:
- Venger, E. F.;
- Gasan-zade, S. G.;
- Strikha, M. V.;
- Shepelskiĭ, G. A.
Publication type:
Article
Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1122, doi. 10.1134/1.2085257
By:
- Berezhinskiı, L. I.;
- Venger, E. F.;
- Matyash, I. E.;
- Sachenko, A. V.;
- Serdega, B. K.
Publication type:
Article
The Electronic and Emissive Properties of Au-Doped Porous Silicon.
Published in:
Semiconductors, 2005, v. 39, n. 5, p. 565, doi. 10.1134/1.1923566
By:
- Primachenko, V. E.;
- Kononets, Ja. F.;
- Bulakh, B. M.;
- Venger, E. F.;
- Kaganovich, É. B.;
- Kizyak, I. M.;
- Kirillova, S. I.;
- Mano&ibreve;lov, É. G.;
- Tsyrkunov, Yu. A.
Publication type:
Article
Modification of the Electrical and Photoelectric Properties of Mg[sub 0.15]Cd[sub 0.85]Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range.
Published in:
Semiconductors, 2002, v. 36, n. 7, p. 747, doi. 10.1134/1.1493742
By:
- Baıdullaeva, A.;
- Venger, E. F.;
- Vlasenko, A. I.;
- Lomovtsev, A. V.;
- Mozol’, P. E.
Publication type:
Article
Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1027, doi. 10.1134/1.1507286
By:
- Kaganovich, É. B.;
- Kizyak, I. M.;
- Kirillova, S. I.;
- Manoılov, É. G.;
- Primachenko, V. E.;
- Svechnikov, S. V.;
- Venger, E. F.
Publication type:
Article
The Effect of Composition on the Properties and Defect Structure of the CdS–Ga[sub 2]S[sub 3] Solid Solution.
Published in:
Semiconductors, 2002, v. 36, n. 7, p. 763, doi. 10.1134/1.1493746
By:
- Venger, E. F.;
- Ermolovich, I. B.;
- Milenin, V. V.;
- Papusha, V. P.
Publication type:
Article
Changes in Properties of a <PorousSilicon>/Silicon System during Gradual Etching off of the Porous Silicon Layer.
Published in:
Semiconductors, 2002, v. 36, n. 3, p. 330, doi. 10.1134/1.1461412
By:
- Venger, E. F.;
- Gorbach, T. Ya.;
- Kirillova, S. I.;
- Primachenko, V. E.;
- Chernobaı, V. A.
Publication type:
Article
The Transition Layer in TiB[sub 2]–GaAs and Au–TiB[sub 2]–GaAs Schottky Contacts.
Published in:
Semiconductors, 2001, v. 35, n. 4, p. 427, doi. 10.1134/1.1365188
By:
- Venger, E. F.;
- Konakova, R. V.;
- Okhrimenko, O. B.;
- Sapko, S. Yu.;
- Shekhovtsov, L. V.;
- Ivanov, V. N.
Publication type:
Article
Breakdown of Shallow-Level Donors in Si and Ge on the Insulating Side of a Strain-Induced Metal–Insulator Transition.
Published in:
Semiconductors, 2000, v. 34, n. 9, p. 1021, doi. 10.1134/1.1309413
By:
- Budzulyak, S. I.;
- Venger, E. F.;
- Dotsenko, Yu. P.;
- Ermakov, V. N.;
- Kolomoets, V. V.;
- Machulin, V. F.;
- Panasyuk, L. I.
Publication type:
Article
Far Infrared Stimulated and Spontaneous Radiation in Uniaxially Deformed Zero-Gap Hg[sub 1 – ][sub x]Cd[sub x]Te.
Published in:
Semiconductors, 2000, v. 34, n. 7, p. 763, doi. 10.1134/1.1188069
By:
- Venger, E. F.;
- Gasan-zade, S. G.;
- Strikha, M. V.;
- Staryı, S. V.;
- Shepel’skiı, G. A.
Publication type:
Article
Emission Associated with Extended Defects in Epitaxial ZnTe/GaAs Layers and Multilayer Structures.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 11, doi. 10.1134/1.1187943
By:
- Venger, E. F.;
- Sadof’ev, Yu. G.;
- Semenova, G. N.;
- Korsunskaya, N. E.;
- Klad’ko, V. P.;
- Semtsiv, M. P.;
- Borkovskaya, L. V.
Publication type:
Article
Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 865, doi. 10.1134/1.1187800
By:
- Venger, E. F.;
- Milenin, V. V.;
- Ermolovich, I. B.;
- Konakova, R. V.;
- Ivanov, V. N.;
- Voıtsikhovskiı, D. I.
Publication type:
Article
Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures.
Published in:
Semiconductors, 1999, v. 33, n. 11, p. 1202, doi. 10.1134/1.1187849
By:
- Venger, E. F.;
- Kaganovich, É. B.;
- Kirillova, S. I.;
- Manoilov, É. G.;
- Primachenko, V. E.;
- Svechnikov, S. V.
Publication type:
Article
Electronic properties of a GaAs surface treated with hydrochloric acid.
Published in:
Semiconductors, 1999, v. 33, n. 10, p. 1088, doi. 10.1134/1.1187871
By:
- Venger, E. F.;
- Kirillova, S. I.;
- Primachenko, V. E.
Publication type:
Article
Correlated increase of ε2- and ε1-conductivity energies under strain-induced metal-insulator transition in n-Ge(Sb).
Published in:
Physica Status Solidi (B), 2004, v. 241, n. 14, p. 3210, doi. 10.1002/pssb.200405204
By:
- Budzulyak, S. I.;
- Gorin, A. E.;
- Ermakov, V. M.;
- Kolomoets, V. V.;
- Machulin, V. F.;
- Suss, B. B.;
- Venger, E. F.;
- Bigoja, O. D.
Publication type:
Article
Breakdown of Donor Localized States on the Insulating Side of Strain-Induced MI Transitions in Si and Ge.
Published in:
Physica Status Solidi (B), 1999, v. 211, n. 1, p. 137, doi. 10.1002/(SICI)1521-3951(199901)211:1<137::AID-PSSB137>3.0.CO;2-#
By:
- Budzulyak, S. I.;
- Dotsenko, J. P.;
- Gorin, A. E.;
- Kolomoets, V. V.;
- Machulin, V. F.;
- Ermakov, V. N.;
- Venger, E. F.;
- Liarokapis, E.;
- Tunstall, D. P.
Publication type:
Article
Anisotropy of the ZnO single crystal reflectivity in the region of residual rays.
Published in:
Physica Status Solidi (B), 1995, v. 188, n. 2, p. 823, doi. 10.1002/pssb.2221880226
By:
- Venger, E. F.;
- Melnichuk, A. V.;
- Melnichuk, L. Yu.;
- Pasechnik, Yu. A.
Publication type:
Article
Dielectric Permeability of Close-Packed Aerosil in the Region of SiO Vibrations.
Published in:
Physica Status Solidi (B), 1993, v. 175, n. 2, p. K71, doi. 10.1002/pssb.2221750233
By:
- Goncharenko, A. V.;
- Venger, E. F.
Publication type:
Article
Surface Relief and Dissipation Influence on Plasmon-Phonon Polariton Dispersion of Polar Semiconductors.
Published in:
Physica Status Solidi (B), 1990, v. 157, n. 2, p. 601, doi. 10.1002/pssb.2221570211
By:
- Dmitruk, N. L.;
- Fidrya, N. A.;
- Snitko, O. V.;
- Venger, E. F.
Publication type:
Article
Simplest Properties of Guided Wave Polaritons in Three-Layer Structures.
Published in:
Physica Status Solidi (B), 1988, v. 146, n. 2, p. 517, doi. 10.1002/pssb.2221460213
By:
- Burshta, I. I.;
- Venger, E. F.;
- Pasechnik, Yu. A.;
- Snitko, O. V.
Publication type:
Article

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