Works matching AU Vdovin, E. E.

Results: 71

Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 199, doi. 10.1134/1.1349932

By:

Khanin, Yu. N.;
Novoselov, K. S.;
Vdovin, E. E.

Publication type:

Article

Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier

Published in:

Semiconductors, 1998, v. 32, n. 5, p. 539, doi. 10.1134/1.1187434

By:

Popov, V. G.;
Dubrovskii, Yu. V.;
Khanin, Yu. N.;
Vdovin, E. E.;
Maude, D. K.;
Portal, J. -C.;
Andersson, T. G.;
Thordson, J.

Publication type:

Article

INTRODUCTION TO TWO-DIMENSIONAL MATERIALS.

Published in:

Surface Review & Letters, 2021, v. 28, n. 8, p. 1, doi. 10.1142/S0218625X21400059

By:

LENG, XUANYE;
CHEN, SIYU;
YANG, KOU;
CHEN, MUSEN;
SHAKER, MAJID;
VDOVIN, EVGENII E.;
GE, QI;
NOVOSELOV, KOSTYA S.;
ANDREEVA, DARIA V.

Publication type:

Article

TECHNOLOGY AND APPLICATIONS OF GRAPHENE OXIDE MEMBRANES.

Published in:

Surface Review & Letters, 2021, v. 28, n. 8, p. 1, doi. 10.1142/S0218625X21400047

By:

LENG, XUANYE;
CHEN, SIYU;
YANG, KOU;
CHEN, MUSEN;
SHAKER, MAJID;
VDOVIN, EVGENII E.;
GE, QI;
NOVOSELOV, KOSTYA S.;
ANDREEVA, DARIA V.

Publication type:

Article

Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 3, p. N.PAG, doi. 10.1002/adfm.201805491

By:

Bhuiyan, Mahabub A.;
Kudrynskyi, Zakhar R.;
Mazumder, Debarati;
Greener, Jake D. G.;
Makarovsky, Oleg;
Mellor, Christopher J.;
Vdovin, Evgeny E.;
Piot, Benjamin A.;
Lobanova, Inna I.;
Kovalyuk, Zakhar D.;
Nazarova, Marina;
Mishchenko, Artem;
Novoselov, Kostya S.;
Cao, Yang;
Eaves, Laurence;
Yusa, Go;
Patanè, Amalia

Publication type:

Article

Carter subgroups and Fitting heights of finite groups.

Published in:

Archiv der Mathematik, 2018, v. 110, n. 5, p. 427, doi. 10.1007/s00013-017-1143-z

By:

Guo, Wenbin;
Vdovin, E. P.

Publication type:

Article

Inelastic resonant tunnelling through adjacent localised electronic states in van der Waals heterostructures.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00528-6

By:

Vdovin, E. E.;
Kapralov, K.;
Khanin, Yu. N.;
Margaryan, A.;
Watanabe, K.;
Taniguchi, T.;
Yang, C.;
Morozov, S. V.;
Svintsov, D. A.;
Novoselov, K. S.;
Ghazaryan, D. A.

Publication type:

Article

Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier.

Published in:

NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00470-z

By:

Mylnikov, Dmitry A.;
Kashchenko, Mikhail A.;
Kapralov, Kirill N.;
Ghazaryan, Davit A.;
Vdovin, Evgenii E.;
Morozov, Sergey V.;
Novoselov, Kostya S.;
Bandurin, Denis A.;
Chernov, Alexander I.;
Svintsov, Dmitry A.

Publication type:

Article

Manifestation of Layer-by-Layer Localization of van Hove Singularities in Tunneling between Bilayer Graphene Sheets.

Published in:

JETP Letters, 2024, v. 120, n. 11, p. 854, doi. 10.1134/S0021364024604019

By:

Vdovin, E. E.;
Khanin, Yu. N.;
Morozov, S. V.;
Kashchenko, M. A.;
Sokolik, A. A.;
Novoselov, K. S.

Publication type:

Article

Coulomb Correlation Gap at Magnetic Tunneling between Graphene Layers.

Published in:

JETP Letters, 2023, v. 118, n. 6, p. 433, doi. 10.1134/S0021364023602464

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Morozov, S. V.;
Novoselov, K. S.

Publication type:

Article

Strong Effect of the Wavelength of Light on Quantum Oscillations of the Photocurrent and Their Resonant Tunneling Nature in p–i–n GaAs/AlAs Heterostructures.

Published in:

JETP Letters, 2021, v. 114, n. 6, p. 332, doi. 10.1134/S0021364021180089

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Morozov, S. V.

Publication type:

Article

Effect of the Radiation Power on the Modification of Oscillations of the Photocurrent in Single-Barrier p–i–n GaAs/AlAs/GaAs Heterostructures with InAs Quantum Dots.

Published in:

JETP Letters, 2021, v. 113, n. 9, p. 586, doi. 10.1134/S0021364021090113

By:

Vdovin, E. E.;
Khanin, Yu. N.

Publication type:

Article

Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene.

Published in:

JETP Letters, 2019, v. 109, n. 7, p. 482, doi. 10.1134/S0021364019070051

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Grigor'ev, M. V.;
Makarovsky, O.;
Alhazmi, Manal;
Morozov, S. V.;
Mishchenko, A.;
Novoselov, K. S.

Publication type:

Article

Resonance Tunneling Phenomena in Two-Dimensional Multilayer van der Waals Crystalline Systems.

Published in:

JETP Letters, 2018, v. 108, n. 9, p. 641, doi. 10.1134/S0021364018210142

By:

Vdovin, E. E.;
Khanin, Yu. N.

Publication type:

Article

Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures.

Published in:

JETP Letters, 2018, v. 107, n. 4, p. 238, doi. 10.1134/S0021364018040069

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Larkin, I. A.;
Makarovsky, O.;
Sklyueva, Yu. A.;
Mishchenko, A.;
Wang, Yi Bo;
Kozikov, A.;
Gorbachev, R. V.;
Novoselov, K. S.

Publication type:

Article

Selective spectroscopy of tunneling transitions between the Landau levels in vertical double-gate graphene-boron nitride-graphene heterostructures.

Published in:

JETP Letters, 2016, v. 104, n. 5, p. 334, doi. 10.1134/S0021364016170094

By:

Khanin, Yu.;
Vdovin, E.;
Mishchenko, A.;
Tu, J.;
Kozikov, A.;
Gorbachev, R.;
Novoselov, K.

Publication type:

Article

Period of photoconductivity oscillations and charge dynamics of quantum dots in p- i- n GaAs/InAs/AlAs heterojunctions.

Published in:

JETP Letters, 2015, v. 102, n. 11, p. 720, doi. 10.1134/S0021364015230071

By:

Khanin, Yu.;
Vdovin, E.;
Makarovskii, O.;
Henini, M.

Publication type:

Article

Observation of the anomalous temperature dependence of resonance tunneling through zero-dimensional states in a quantum well with dynamic coulomb interaction between the tunneling channels.

Published in:

JETP Letters, 2012, v. 96, n. 8, p. 529, doi. 10.1134/S0021364012200155

By:

Vdovin, E.;
Khanin, Yu.;
Henini, M.

Publication type:

Article

Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 835, doi. 10.1134/S1063782621100122

By:

Khanin, Yu. N.;
Vdovin, E. E.

Publication type:

Article

On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 291, doi. 10.1134/S1063782620030082

By:

Grigoriev, M. V.;
Ghazaryan, D. A.;
Vdovin, E. E.;
Khanin, Yu. N.;
Morozov, S. V.;
Novoselov, K. S.

Publication type:

Article

Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1038, doi. 10.1134/S1063782619080104

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Mishchenko, A.;
Novoselov, K. S.

Publication type:

Article

Quantum Oscillations of Photoconductivity Relaxation in p-i-n GaAs/InAs/AlAs Heterodiodes.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 739, doi. 10.1134/S1063782618060088

By:

Khanin, Yu. N.;
Vdovin, E. E.

Publication type:

Article

Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1215, doi. 10.1134/S1063782613090091

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Makarovsky, O.;
Henini, M.

Publication type:

Article

Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.

Published in:

Semiconductors, 2005, v. 39, n. 10, p. 1162, doi. 10.1134/1.2085264

By:

Vdovin, E. E.;
Khanin, Yu. N.

Publication type:

Article

The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well.

Published in:

Semiconductors, 2005, v. 39, n. 5, p. 543, doi. 10.1134/1.1923562

By:

Morozova, E. N.;
Makarovski&ibreve;, O. N.;
Volkov, V. A.;
Dubrovski&ibreve;, Yu. V.;
Turyanska, L.;
Vdovin, E. E.;
Patané, A.;
Eaves, L.;
Henini, M.

Publication type:

Article

Effective Mass Anisotropy of Γ Electrons in a GaAs/(AlGa)As Quantum Well.

Published in:

Semiconductors, 2005, v. 39, n. 4, p. 421, doi. 10.1134/1.1900256

By:

Vdovin, E. E.;
Khanin, Yu. N.

Publication type:

Article

Resonant Γ–X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 419, doi. 10.1134/1.1734669

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Dubrovski&icaron;, Yu. V.

Publication type:

Article

Zero Bias Anomalies of Transport Characteristics of Single-Barrier GaAs/AlAs/GaAs Heterostructures as a Result of Resonance Tunneling between Parallel Two-Dimensional Electron Gases and Suppression of Resonance Tunneling in a Magnetic Field as a...

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 692, doi. 10.1134/1.1582537

By:

Khanin, Yu. N.;
Dubrovskiı, Yu. V.;
Vdovin, E. E.

Publication type:

Article

The Number of Sylow Subgroups in Special Linear Groups of Degree 2.

Published in:

Algebra & Logic, 2018, v. 56, n. 6, p. 498, doi. 10.1007/s10469-018-9471-z

By:

Wu, Zh.;
Guo, W.;
Vdovin, E. P.

Publication type:

Article

Pronormality of Hall Subgroups in Their Normal Closure.

Published in:

Algebra & Logic, 2018, v. 56, n. 6, p. 451, doi. 10.1007/s10469-018-9467-8

By:

Vdovin, E. P.;
Nesterov, M. N.;
Revin, D. O.

Publication type:

Article

Abnormality Criteria for p-Complements.

Published in:

Algebra & Logic, 2016, v. 55, n. 5, p. 347, doi. 10.1007/s10469-016-9406-5

By:

Vdovin, E.;
Revin, D.

Publication type:

Article

The Structure of Groups Possessing Carter Subgroups of Odd Order.

Published in:

Algebra & Logic, 2015, v. 54, n. 2, p. 105, doi. 10.1007/s10469-015-9330-0

By:

Vdovin, E.

Publication type:

Article

Groups of Induced Automorphisms and Their Application to Studying the Existence Problem for Hall Subgroups.

Published in:

Algebra & Logic, 2014, v. 53, n. 5, p. 418, doi. 10.1007/s10469-014-9301-x

By:

Vdovin, E.

Publication type:

Article

Pronormality and Strong Pronormality of Subgroups.

Published in:

Algebra & Logic, 2013, v. 52, n. 1, p. 15, doi. 10.1007/s10469-013-9215-z

By:

Vdovin, E.;
Revin, D.

Publication type:

Article

Cocliques of maximal size in the prime graph of a finite simple group.

Published in:

Algebra & Logic, 2011, v. 50, n. 4, p. 291, doi. 10.1007/s10469-011-9143-8

By:

Vasil'ev, A.;
Vdovin, E.

Publication type:

Article

Normalizers of subsystem subgroups in finite groups of Lie type.

Published in:

Algebra & Logic, 2008, v. 47, n. 1, p. 1, doi. 10.1007/s10469-008-0001-2

By:

Vdovin, E. P.;
Galt, A. A.

Publication type:

Article

Carter subgroups of finite almost simple groups.

Published in:

Algebra & Logic, 2007, v. 46, n. 2, p. 90, doi. 10.1007/s10469-007-0010-6

By:

Vdovin, E.

Publication type:

Article

An Adjacency Criterion for the Prime Graph of a Finite Simple Group.

Published in:

Algebra & Logic, 2005, v. 44, n. 6, p. 381, doi. 10.1007/s10469-005-0037-5

By:

Vasiliev, A.;
Vdovin, E.

Publication type:

Article

One-electron spin-dependent transport in split-gate structures containing self-organized InAs quantum dots.

Published in:

Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 145, doi. 10.1134/S106377610707031X

By:

Vdovin, E. E.;
Khanin, Yu. N.;
Shabel'nikova, P. L.;
Levin, A.;
Eaves, L.;
Dubonos, S. V.;
Henini, M.

Publication type:

Article

Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot.

Published in:

Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 152, doi. 10.1134/S1063776107070333

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Eaves, L.;
Larkin, I. A.;
Patane, A.;
Makarovskiĭ, O. N.;
Henini, M.

Publication type:

Article

Observation of the low-temperature peak in the interlayer tunneling conductance in bilayer electron systems in the absence of the magnetic field.

Published in:

Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 177, doi. 10.1134/S1063776107070394

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Grigor'ev, M.;
Eaves, L.;
Makarovskiĭ, O. N.;
Henini, M.

Publication type:

Article

Resonant Tunneling of Electrons through Virtual Interference States Formed as a Result of Reflection from the Boundary of Strongly Doped Region of GaAs.

Published in:

Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 3, p. 530, doi. 10.1134/1.1809681

By:

Khanin, Yu. N.;
Vdovin, E. E.;
Dubrovskiı, Yu. V.

Publication type:

Article

Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers.

Published in:

Journal of Experimental & Theoretical Physics, 1998, v. 86, n. 2, p. 383, doi. 10.1134/1.558440

By:

Valyaev, V. V.;
Gurtovoı, V. L.;
Ivanov, D. Yu.;
Morozov, S. V.;
Sirotkin, V. V.;
Dubrovskiı, Yu. V.;
Shapoval, S. Yu.;
Khanin, Yu. N.;
Vdovin, E. E.;
Pustovit, A. N.

Publication type:

Article

Classification of finite reparametrization symmetry groups in the three-Higgs-doublet model.

Published in:

European Physical Journal C -- Particles & Fields, 2013, v. 73, n. 2, p. 1, doi. 10.1140/epjc/s10052-013-2309-x

By:

Ivanov, Igor;
Vdovin, E.

Publication type:

Article

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

Published in:

Nature Nanotechnology, 2014, v. 9, n. 10, p. 808, doi. 10.1038/nnano.2014.187

By:

Mishchenko, A.;
Tu, J. S.;
Cao, Y.;
Gorbachev, R. V.;
Wallbank, J. R.;
Greenaway, M. T.;
Morozov, V. E.;
Morozov, S. V.;
Zhu, M. J.;
Wong, S. L.;
Withers, F.;
Woods, C. R.;
Kim, Y-J.;
Watanabe, K.;
Taniguchi, T.;
Vdovin, E. E.;
Makarovsky, O.;
Fromhold, T. M.;
Fal'ko, V. I.;
Geim, A. K.

Publication type:

Article

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions.

Published in:

Communications Physics, 2023, v. 6, n. 1, p. 1, doi. 10.1038/s42005-023-01277-y

By:

Vdovin, Evgenii E.;
Greenaway, Mark T.;
Khanin, Yurii N.;
Morozov, Sergey V.;
Makarovsky, Oleg;
Patanè, Amalia;
Mishchenko, Artem;
Slizovskiy, Sergey;
Fal'ko, Vladimir I.;
Geim, Andre K.;
Novoselov, Kostya S.;
Eaves, Laurence

Publication type:

Article

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions.

Published in:

Communications Physics, 2023, v. 6, n. 1, p. 1, doi. 10.1038/s42005-023-01277-y

By:

Vdovin, Evgenii E.;
Greenaway, Mark T.;
Khanin, Yurii N.;
Morozov, Sergey V.;
Makarovsky, Oleg;
Patanè, Amalia;
Mishchenko, Artem;
Slizovskiy, Sergey;
Fal'ko, Vladimir I.;
Geim, Andre K.;
Novoselov, Kostya S.;
Eaves, Laurence

Publication type:

Article

Erratum to: 'Formation of Nanoelectrostatic Quantum Dots and Two-Dimensional Subbands by the Random Potential of Mn Donors in p-i-n Resonant Tunneling Heterosystem,'.

Published in:

2011

By:

Koval'skii, V.;
Vdovin, E.;
Khanin, Yu.

Publication type:

Correction Notice

Formation of nanoelectrostatic quantum dots and two-dimensional subbands by the random potential of Mn donors in p-i-n resonant tunneling heterosystems.

Published in:

JETP Letters, 2010, v. 92, n. 5, p. 321, doi. 10.1134/S002136401017011X

By:

Koval'skii, V.;
Vdovin, E.;
Khanin, Yu.

Publication type:

Article

Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well.

Published in:

JETP Letters, 2009, v. 90, n. 6, p. 449, doi. 10.1134/S0021364009180106

By:

Vdovin, E. E.;
Khanin, Yu. N.

Publication type:

Article