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Properties of Octupole States U.
- Published in:
- Physics of Atomic Nuclei, 2024, v. 87, n. 3, p. 131, doi. 10.1134/S1063778824700182
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- Article
Neutrino Spectrum and Energy Loss Rates Due to Weak Processes on Hot 56 Fe in Pre-Supernova Environment.
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- Particles (2571-712X), 2023, v. 6, n. 3, p. 682, doi. 10.3390/particles6030041
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- Article
Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO 2.
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- Crystals (2073-4352), 2023, v. 13, n. 2, p. 355, doi. 10.3390/cryst13020355
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- Article
Extended Defects in O+-Implanted Si Layers and Their Luminescence.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 625, doi. 10.1134/S1063774521040210
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- Article
Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence.
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- Crystallography Reports, 2021, v. 66, n. 4, p. 636, doi. 10.1134/S1063774521040064
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- Article
CHARACTERIZATION OF INTERFACE LAYERS OF A SOLID SOLUTION FORMED DURING THE GROWTH OF A CARBIDE LAYER ON SILICON FROM HYDROGEN CONTAINING COMPOUNDS.
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- Journal of Structural Chemistry, 2021, v. 62, n. 4, p. 630, doi. 10.1134/S0022476621040156
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- Article
Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds.
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- Crystals (2073-4352), 2020, v. 10, n. 6, p. 491, doi. 10.3390/cryst10060491
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- Article
Tensor Interaction Effects on Stellar Electron Capture and Beta-Decay Rates.
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- Physics of Atomic Nuclei, 2020, v. 83, n. 2, p. 143, doi. 10.1134/S106377882002009X
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- Article
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide.
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- Semiconductors, 2018, v. 52, n. 10, p. 1341, doi. 10.1134/S1063782618100160
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- Article
Aluminum-induced crystallization of silicon suboxide thin films.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 9, p. 1, doi. 10.1007/s00339-018-2070-y
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- Article
Defect Structure of GaAs Layers Implanted with Nitrogen Ions.
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- Technical Physics Letters, 2018, v. 44, n. 9, p. 817, doi. 10.1134/S1063785018090298
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- Article
Role of the phase transition at GaN QDs formation on (0001)AlN surface by ammonia molecular beam epitaxy.
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- Journal of Thermal Analysis & Calorimetry, 2018, v. 133, n. 2, p. 1181, doi. 10.1007/s10973-018-7280-1
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- Article
Photoluminescence associated with {113} defects in oxygen-implanted silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 7, p. n/a, doi. 10.1002/pssa.201700317
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- Article
NEUTRINO PROCESSES WITH HOT NUCLEI IN SUPERNOVAE.
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- Acta Physica Polonica B, 2017, v. 48, n. 3, p. 667, doi. 10.5506/APhysPolB.48.667
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- Article
Momentum and buoyancy transfer in atmospheric turbulent boundary layer over wavy water surface -- Part 2: Wind-wave spectra.
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- Nonlinear Processes in Geophysics, 2013, v. 20, n. 5, p. 841, doi. 10.5194/npg-20-841-2013
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- Article
Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si.
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- Journal of Experimental & Theoretical Physics, 2009, v. 109, n. 4, p. 602, doi. 10.1134/S1063776109100069
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ON THE TFD TREATMENT OF COLLECTIVE VIBRATIONS IN HOT NUCLEI.
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- International Journal of Modern Physics E: Nuclear Physics, 2009, v. 18, n. 7, p. 1535, doi. 10.1142/S0218301309013695
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- Article
Charge-exchange transitions in hot nuclei.
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- Physics of Atomic Nuclei, 2009, v. 72, n. 8, p. 1320, doi. 10.1134/S1063778809080079
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- Article
Effect of the Sign of Misfit Strain on the Formation of a Dislocation Structure in SiGe Epitaxial Layers Grown on Si and Ge Substrates.
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- Crystallography Reports, 2005, v. 50, n. 5, p. 849, doi. 10.1134/1.2049407
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- Article
Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge[sup +] Ions.
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- Semiconductors, 2004, v. 38, n. 3, p. 313, doi. 10.1134/1.1682335
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- Article
TFD Extension of a Self-Consistent RPA to Finite Temperatures.
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- Physics of Atomic Nuclei, 2001, v. 64, n. 6, p. 1069, doi. 10.1134/1.1383619
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- Article
A Study of Structural Perfection of Interfaces in Si/SiGe Superlattices.
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- Crystallography Reports, 2000, v. 45, n. 4, p. 661, doi. 10.1134/1.1306580
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- Article
Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon.
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- Semiconductors, 1999, v. 33, n. 6, p. 610, doi. 10.1134/1.1187763
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Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures.
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- Semiconductors, 1999, v. 33, n. 6, p. 613, doi. 10.1134/1.1187739
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- Article