Works by Usov, O. A.

Results: 39

Strain Mismatch Induced Tilted Heteroepitaxial (000 l) Hexagonal ZnO Films on (001) Cubic Substrates.

Published in:

Advanced Engineering Materials, 2011, v. 13, n. 12, p. 1142, doi. 10.1002/adem.201100106

By:

Kang, Bo Soo;
Stan, Liliana;
Usov, Igor O.;
Lee, Jung-Kun;
Harriman, Tres A.;
Lucca, Don A.;
DePaula, Raymond F.;
Arendt, Paul N.;
Nastasi, Michael;
MacManus-Driscoll, Judith L.;
Park, Bae Ho;
Jia, Quanxi

Publication type:

Article

Differential Tunneling Conductance in Multicomponent Bi2 – xSbxTe3 – y – zSeySz Solid Solutions.

Published in:

Semiconductors, 2022, v. 56, n. 5, p. 317, doi. 10.1134/S1063782622050049

By:

Lukyanova, L. N.;
Makarenko, I. V.;
Usov, O. A.

Publication type:

Article

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 230, doi. 10.1134/S1063782622020178

By:

Veis, A. N.;
Lukyanova, L. N.;
Usov, O. A.

Publication type:

Article

Scanning Tunneling Microscopy in (Bi, Sb)2(Te, Se, S)3 Chalcogenide Thermoelectrics.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 195, doi. 10.1134/S1063782622020105

By:

Lukyanova, L. N.;
Makarenko, I. V.;
Usov, O. A.

Publication type:

Article

Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides.

Published in:

Semiconductors, 2022, v. 56, n. 2, p. 134, doi. 10.1134/S1063782622010183

By:

Usov, O. A.;
Lukyanova, L. N.;
Volkov, M. P.

Publication type:

Article

Effective Mass, Mobility of Charge Carriers, and Lattice Thermal Conductivity in Nanocomposite Thermoelectrics Based on Bismuth and Antimony Chalcogenides.

Published in:

Semiconductors, 2022, v. 56, n. 1, p. 10, doi. 10.1134/S1063782622010109

By:

Lukyanova, L. N.;
Shabaldin, A. A.;
Samunin, A. Yu.;
Usov, O. A.

Publication type:

Article

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2121, doi. 10.1134/S106378261912025X

By:

Sakharov, A. V.;
Usov, S. O.;
Rodin, S. N.;
Lundin, W. V.;
Tsatsulnikov, A. F.;
Mitrofanov, M. I.;
Levitskii, I. V.;
Voznyuk, G. V.;
Kaliteevskii, M. A.;
Evtikhiev, V. P.

Publication type:

Article

Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride.

Published in:

Semiconductors, 2019, v. 53, n. 13, p. 1860, doi. 10.1134/S1063782619130128

By:

Lukyanova, L. N.;
Makarenko, I. V.;
Usov, O. A.;
Dementev, P. A.

Publication type:

Article

On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures.

Published in:

Semiconductors, 2019, v. 53, n. 6, p. 732, doi. 10.1134/S1063782619060083

By:

Korobeinikov, I. V.;
Morozova, N. V.;
Lukyanova, L. N.;
Usov, O. A.;
Ovsyannikov, S. V.

Publication type:

Article

Formation of silver nanoparticles in photothermorefractive glasses during electron irradiation.

Published in:

Technical Physics, 2011, v. 56, n. 5, p. 662, doi. 10.1134/S1063784211050148

By:

Ignat'ev, A.;
Nashchekin, A.;
Nevedomskii, V.;
Podsvirov, O.;
Sidorov, A.;
Solov'ev, A.;
Usov, O.

Publication type:

Article

Pyrolytic Carbon Coating Effects on Oxide and Carbide Kernels Intended for Nuclear Fuel Applications.

Published in:

Nuclear Technology, 2020, v. 206, n. 1, p. 23, doi. 10.1080/00295450.2019.1618683

By:

Beaux II, Miles F.;
Vodnik, Douglas R.;
Peterson, Reuben J.;
Bennett, Bryan L.;
Hubbard, Kevin M.;
Patterson, Brian M.;
Goettee, Jeffrey D.;
Jurney, James D.;
King, Graham M.;
Smith, Alice I.;
Tegtmeier, Eric L.;
Luther, Erik P.;
Dasari, Venkateswara R.;
Devlin, David J.;
Usov, Igor O.

Publication type:

Article

A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films.

Published in:

Advanced Materials, 2009, v. 21, n. 2, p. 193, doi. 10.1002/adma.200801959

By:

Luo, Hongmei;
Lin, Yuan;
Wang, Haiyan;
Lee, Joon Hwan;
Suvorova, Natalya A.;
Mueller, Alexander H.;
Burrell, Anthony K.;
McCleskey, T. Mark;
Bauer, Eve;
Usov, Igor O.;
Hawley, Marilyn E.;
Holesinger, Terry G.;
Jia, Quanxi

Publication type:

Article

Local surface conductivity of single crystalline Bi2Te3 (0001).

Published in:

Ferroelectrics, 2018, v. 525, n. 1, p. 156, doi. 10.1080/00150193.2018.1432828

By:

Kunkel, T. S.;
Lukyanova, L. N.;
Ankudinov, A. V.;
Usov, O. A.

Publication type:

Article

Effect of electron irradiation on the formation of silver nanoclusters in photothermorefractive glasses.

Published in:

Technical Physics Letters, 2009, v. 35, n. 9, p. 812, doi. 10.1134/S1063785009090089

By:

Vostokov, A. V.;
Ignat'ev, A. I.;
Nikonorov, N. V.;
Podsvirov, O. A.;
Sidorov, A. I.;
Nashchekin, A. V.;
Sokolov, R. V.;
Usov, O. A.;
Tsekhomskii, V. A.

Publication type:

Article

Electron-beam modification of the near-surface layers of photosensitive glasses.

Published in:

Technical Physics Letters, 2009, v. 35, n. 4, p. 309, doi. 10.1134/S1063785009040063

By:

Nikonorov, N. V.;
Sidorov, A. I.;
Tsekhomskii, V. A.;
Nashchekin, A. V.;
Usov, O. A.;
Podsvirov, O. A.;
Poplevkin, S. V.

Publication type:

Article

Investigation of implanted layers in silicon carbide by a modulation photoreflection method.

Published in:

Technical Physics Letters, 1997, v. 23, n. 7, p. 500, doi. 10.1134/1.1261726

By:

Walther, H. G.;
Karge, H.;
Muratikov, K. L.;
Suvorov, A. V.;
Usov, I. O.

Publication type:

Article

Method for a Tube Inner Surface Coating.

Published in:

Fusion Science & Technology, 2023, v. 79, n. 7, p. 816, doi. 10.1080/15361055.2023.2173946

By:

Usov, I. O.;
Siller, V. P.;
Wilson, C. T.;
Patterson, B. M.;
Vodnik, D. R.;
Bennett, B. L.

Publication type:

Article

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 19, doi. 10.1002/pssa.201532491

By:

Karpov, S. Yu.;
Cherkashin, N. A.;
Lundin, W. V.;
Nikolaev, A. E.;
Sakharov, A. V.;
Sinitsin, M. A.;
Usov, S. O.;
Zavarin, E. E.;
Tsatsulnikov, A. F.

Publication type:

Article

Topological Surface States of Dirac Fermions in n-Bi2Te3 –ySey Thermoelectrics.

Published in:

Semiconductors, 2019, v. 53, n. 5, p. 647, doi. 10.1134/S1063782619050142

By:

Lukyanova, L. N.;
Makarenko, I. V.;
Usov, O. A.;
Dementev, P. A.

Publication type:

Article

Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films.

Published in:

Semiconductors, 2019, v. 53, n. 5, p. 620, doi. 10.1134/S1063782619050154

By:

Lukyanova, L. N.;
Usov, O. A.;
Volkov, M. P.

Publication type:

Article

Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs.

Published in:

Semiconductors, 2018, v. 52, n. 14, p. 1843, doi. 10.1134/S1063782618140257

By:

Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. E.;
Zakheim, D. A.;
Usov, S. O.;
Tsatsulnikov, A. F.;
Yagovkina, M. A.;
Sim, P. E.;
Demchenko, O. I.;
Kurbanova, N. Y.;
Velikovskiy, L. E.

Publication type:

Article

Selective Epitaxial Growth of III-N Structures Using Ion-Beam Nanolithography.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1357, doi. 10.1134/S106378261810007X

By:

Lundin, W. V.;
Tsatsulnikov, A. F.;
Rodin, S. N.;
Sakharov, A. V.;
Usov, S. O.;
Mitrofanov, M. I.;
Levitskii, I. V.;
Evtikhiev, V. P.

Publication type:

Article

Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields.

Published in:

Semiconductors, 2017, v. 51, n. 7, p. 843, doi. 10.1134/S1063782617070259

By:

Lukyanova, L.;
Boikov, Yu.;
Usov, O.;
Danilov, V.;
Volkov, M.

Publication type:

Article

On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and BiSbTe solid solution.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 692, doi. 10.1134/S1063782617060203

By:

Lukyanova, L.;
Boikov, Yu.;
Usov, O.;
Danilov, V.

Publication type:

Article

On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride.

Published in:

Semiconductors, 2017, v. 51, n. 6, p. 729, doi. 10.1134/S1063782617060197

By:

Lukyanova, L.;
Bibik, A.;
Aseev, V.;
Usov, O.;
Makarenko, I.;
Petrov, V.;
Nikonorov, N.

Publication type:

Article

Formation of composite InGaN/GaN/InAlN quantum dots.

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1338, doi. 10.1134/S1063782610100167

By:

Tsatsul'nikov, A. F.;
Zavarin, E. E.;
Kryzhanovskaya, N. V.;
Lundin, W. V.;
Saharov, A. V.;
Usov, S. O.;
Brunkov, P. N.;
Goncharov, V. V.;
Cherkashin, N. A.;
Hytch, M.

Publication type:

Article

Structural and optical properties of InAlN/GaN distributed Bragg reflectors.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201

By:

Usov, S. O.;
Zavarin, E. E.;
Tsatsul’nikov, A. F.;
Lundin, V. V.;
Sakharov, A. V.;
Nikolaev, A. E.;
Sinitsyn, M. A.;
Kryzhanovskaya, N. V.;
Troshkov, S. I.;
Ledentsov, N. N.

Publication type:

Article

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.

Published in:

Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205

By:

Tsatsulnikov, A. F.;
Lundin, W. V.;
Sakharov, A. V.;
Zavarin, E. E.;
Usov, S. O.;
Nikolaev, A. E.;
Kryzhanovskaya, N. V.;
Synitsin, M. A.;
Sizov, V. S.;
Zakgeim, A. L.;
Mizerov, M. N.

Publication type:

Article

Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 6, p. 828, doi. 10.1134/S1063782610060242

By:

Kryzhanovskaya, N. V.;
Lundin, W. V.;
Nikolaev, A. E.;
Tsatsul'nikov, A. F.;
Sakharov, A. V.;
Pavlov, M. M.;
Cherkachin, N. A.;
Hÿtch, M. J.;
Valkovsky, G. A.;
Yagovkina, M. A.;
Usov, S. O.

Publication type:

Article

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161

By:

Tsatsulnikov, A. F.;
Lundin, W. V.;
Sakharov, A. V.;
Zavarin, E. E.;
Usov, S. O.;
Nikolaev, A. E.;
Cherkashin, N. A.;
Ber, B. Ya.;
Kazantsev, D. Yu.;
Mizerov, M. N.;
Park, Hee Seok;
Hytch, M.;
Hue, F.

Publication type:

Article

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 123, doi. 10.1134/S1063782610010215

By:

Lundin, W. V.;
Zavarin, E. E.;
Sinitsyn, M. A.;
Sakharov, A. V.;
Usov, S. O.;
Nikolaev, A. E.;
Davydov, D. V.;
Cherkashin, N. A.;
Tsatsulnikov, A. F.

Publication type:

Article

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232

By:

Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. E.;
Sinitsyn, M. A.;
Nikolaev, A. E.;
Usov, S. O.;
Sizov, V. S.;
Mikhailovsky, G. A.;
Cherkashin, N. A.;
Hytch, M.;
Hue, F.;
Yakovlev, E. V.;
Lobanova, A. V.;
Tsatsulnikov, A. F.

Publication type:

Article

Cathodoluminescence studies of C60 fullerene-based films and nanostructures.

Published in:

Semiconductors, 2007, v. 41, n. 8, p. 879, doi. 10.1134/S1063782607080027

By:

Nashchekin, A. V.;
Baryshev, S. V.;
Sokolov, R. V.;
Usov, O. A.

Publication type:

Article

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

Published in:

Semiconductors, 2004, v. 38, n. 4, p. 451, doi. 10.1134/1.1734673

By:

Brunkov, P. N.;
Usov, S. O.;
Musikhin, Yu G.;
Zhukov, A. E.;
Cirlin, G. E.;
Ustinov, V. M.;
Konnikov, S. G.;
Rasulova, G. K.

Publication type:

Article

SELF-ASSEMBLING OF SILVER NANOPARTICLES IN GLASSES UNDER ELECTRON BEAM IRRADIATION.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 6, p. 1265, doi. 10.1142/S0219581X11008411

By:

SIDOROV, A. I.;
NASHCHEKIN, A. V.;
NEVEDOMSKIY, V. N.;
USOV, O. A.;
PODSVIROV, O. A.

Publication type:

Article

VARIABLE-ANGLE OPTICAL REFLECTIVITY AND ANGLE-RESOLVED PHOTOLUMINESCENCE STUDIES OF 2D ACTIVE PHOTONIC CRYSTAL BASED ON QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 197, doi. 10.1142/S0219581X07004572

By:

BLOKHIN, S. A.;
MAXIMOV, M. V.;
USOV, O. A.;
NASHCHEKIN, A. V.;
ARAKCHEEVA, E. M.;
TANKLEVSKAYA, E. M.;
GUREVICH, S. A.;
KONNIKOV, S. G.;
ZHUKOV, A. E.;
LEDENTSOV, N. N.;
USTINOV, V. M.

Publication type:

Article

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates.

Published in:

Technical Physics Letters, 2021, v. 47, n. 10, p. 753, doi. 10.1134/S106378502108006X

By:

Cherkashin, N. A.;
Sakharov, A. V.;
Nikolaev, A. E.;
Lundin, V. V.;
Usov, S. O.;
Ustinov, V. M.;
Grashchenko, A. S.;
Kukushkin, S. A.;
Osipov, A. V.;
Tsatsul'nikov, A. F.

Publication type:

Article

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE.

Published in:

Technical Physics Letters, 2020, v. 46, n. 12, p. 1211, doi. 10.1134/S1063785020120263

By:

Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. E.;
Usov, S. O.;
Brunkov, P. N.;
Tsatsulnikov, A. F.

Publication type:

Article

Radiation Damage of LaMgAl11 O19 and CeMgAl11 O19 Magnetoplumbite.

Published in:

Journal of the American Ceramic Society, 2013, v. 96, n. 10, p. 3325, doi. 10.1111/jace.12503

By:

Men, Danju;
Patel, Maulik K.;
Usov, Igor O.;
Pivin, J. C.;
Porter, John R.;
Mecartney, Martha L.;
Mitchell, T.

Publication type:

Article

Works by Usov, O. A.

Strain Mismatch Induced Tilted Heteroepitaxial (000 l) Hexagonal ZnO Films on (001) Cubic Substrates.

Differential Tunneling Conductance in Multicomponent Bi<sub>2 – x</sub>Sb<sub>x</sub>Te<sub>3 – y – z</sub>Se<sub>y</sub>S<sub>z</sub> Solid Solutions.

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride.

Scanning Tunneling Microscopy in (Bi, Sb)<sub>2</sub>(Te, Se, S)<sub>3</sub> Chalcogenide Thermoelectrics.

Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides.

Effective Mass, Mobility of Charge Carriers, and Lattice Thermal Conductivity in Nanocomposite Thermoelectrics Based on Bismuth and Antimony Chalcogenides.

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam.

Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride.

On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures.

Formation of silver nanoparticles in photothermorefractive glasses during electron irradiation.

Pyrolytic Carbon Coating Effects on Oxide and Carbide Kernels Intended for Nuclear Fuel Applications.

A Chemical Solution Approach to Epitaxial Metal Nitride Thin Films.

Local surface conductivity of single crystalline Bi<sub>2</sub>Te<sub>3</sub> (0001).

Effect of electron irradiation on the formation of silver nanoclusters in photothermorefractive glasses.

Electron-beam modification of the near-surface layers of photosensitive glasses.

Investigation of implanted layers in silicon carbide by a modulation photoreflection method.

Method for a Tube Inner Surface Coating.

Multi-color monolithic III-nitride light-emitting diodes: Factors controlling emission spectra and efficiency.

Topological Surface States of Dirac Fermions in n-Bi<sub>2</sub>Te<sub>3 –</sub><sub>y</sub>Se<sub>y</sub> Thermoelectrics.

Thermoelectric and Galvanomagnetic Properties of Layered n-Bi<sub>2 –</sub><sub>x</sub>Sb<sub>x</sub>Te<sub>3 –</sub><sub>y</sub>Se<sub>y</sub> Films.

Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs.

Selective Epitaxial Growth of III-N Structures Using Ion-Beam Nanolithography.

Transport properties of heteroepitaxial films based on bismuth telluride in strong magnetic fields.

On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and BiSbTe solid solution.

On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride.

Formation of composite InGaN/GaN/InAlN quantum dots.

Structural and optical properties of InAlN/GaN distributed Bragg reflectors.

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.

Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes.

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.

Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.

Cathodoluminescence studies of C<sub>60</sub> fullerene-based films and nanostructures.

Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices.

SELF-ASSEMBLING OF SILVER NANOPARTICLES IN GLASSES UNDER ELECTRON BEAM IRRADIATION.

VARIABLE-ANGLE OPTICAL REFLECTIVITY AND ANGLE-RESOLVED PHOTOLUMINESCENCE STUDIES OF 2D ACTIVE PHOTONIC CRYSTAL BASED ON QUANTUM DOTS.

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates.

The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE.

Radiation Damage of LaMgAl<sub>11</sub> O<sub>19</sub> and CeMgAl<sub>11</sub> O<sub>19</sub> Magnetoplumbite.