Found: 15
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Structure and photoelectric properties of SiSn epilayers.
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- Technical Physics Letters, 2010, v. 36, n. 9, p. 827, doi. 10.1134/S1063785010090154
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- Article
Spectral sensitivity of (Si<sub>2</sub>)<sub>1 − x </sub>(CdS)<sub>x</sub> solid solutions.
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- Technical Physics Letters, 2007, v. 33, n. 10, p. 853, doi. 10.1134/S1063785007100148
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- Article
Synthesis and characterization of (Si<sub>2</sub>)<sub>1− x− y </sub>(Ge<sub>2</sub>)<sub> x </sub>(GaAs)<sub> y </sub> continuous solid solutions.
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- Technical Physics Letters, 2007, v. 33, n. 8, p. 701, doi. 10.1134/S1063785007080238
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- Article
Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds.
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- Applied Solar Energy (19349424), 2023, v. 59, n. 4, p. 400, doi. 10.3103/S0003701X23600753
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- Article
Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions.
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- Applied Solar Energy (19349424), 2020, v. 56, n. 3, p. 178, doi. 10.3103/S0003701X20030093
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- Article
Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure.
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- Applied Solar Energy (19349424), 2019, v. 55, n. 5, p. 265, doi. 10.3103/S0003701X19050116
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- Article
Photosensitivity of <italic>p</italic>Si-<italic>n</italic>(Si<sub>2</sub>)<sub>1-<italic>x</italic>-<italic>y</italic></sub>(Ge<sub>2</sub>)<sub><italic>x</italic></sub>(ZnSe)<sub><italic>y</italic></sub> heterostructures with quantum dots.
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- Applied Solar Energy (19349424), 2017, v. 53, n. 4, p. 287, doi. 10.3103/S0003701X17040132
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- Article
Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them.
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- Physical Sciences & Technology, 2023, v. 10, n. 1, p. 35, doi. 10.26577/phst.2023.v10.i1.05
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- Article
Growth of (InSb)(Sn) films on GaAs substrates by liquid-phase epitaxy.
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- Semiconductors, 2010, v. 44, n. 7, p. 938, doi. 10.1134/S1063782610070183
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- Article
Study of the current-voltage characteristic of the n-CdS/ p-CdTe heterostructure depending on temperature.
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- Semiconductors, 2010, v. 44, n. 3, p. 313, doi. 10.1134/S1063782610030073
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- Article
Possibility of obtaining the (GaSb)<sub>1 − x </sub>(Si<sub>2</sub>)<sub> x </sub> films on silicon substrates by the method of liquid-phase epitaxy.
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- Semiconductors, 2009, v. 43, n. 8, p. 1092, doi. 10.1134/S1063782609080235
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- Article
I–V characteristic of p-n structures based on a continuous solid solutions (Si<sub>2</sub>)<sub>1 − xx</sub>(CdS)<sub> x</sub>.
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- Semiconductors, 2009, v. 43, n. 4, p. 416, doi. 10.1134/S1063782609040022
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- Article
Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2023, v. 37, n. 14, p. 1, doi. 10.1142/S0217979223501321
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- Article
Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 –x(Sn2)x Heterostructures.
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- Technical Physics Letters, 2020, v. 46, n. 11, p. 1124, doi. 10.1134/S1063785020110279
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- Article
Effect of Injection Depletion in p-Si-n-(Si<sub>2</sub>)<sub>1 -</sub><sub>x</sub>(ZnSe)<sub>x</sub> (0 ≤ x ≤ 0.01) Heterostructure.
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- Semiconductors, 2018, v. 52, n. 9, p. 1188, doi. 10.1134/S1063782618090142
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- Article