Works by Usikova, A. A.

Results: 51

Electronic System of Remote Optical Control of LiNbO3 Mach-Zehnder Modulator Operating Point.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 1, p. 206, doi. 10.3390/electronics12010206

By:

Agruzov, Peter;
Parfenov, Mikhail;
Tronev, Aleksandr;
Varlamov, Andrei;
Ilichev, Igor;
Usikova, Anna;
Shamrai, Aleksandr

Publication type:

Article

Technology of coaxial laser gas-powder surfacing of alloys of the Mo+NiCrBSi system.

Published in:

Welding International, 2015, v. 29, n. 6, p. 481, doi. 10.1080/09507116.2014.941676

By:

Yegunov, A.I.;
Artemenko, Yu.A.;
Konoreva, N.A.;
Usikova, N.Yu.

Publication type:

Article

Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature.

Published in:

Technical Physics Letters, 2018, v. 44, n. 9, p. 814, doi. 10.1134/S1063785018090249

By:

Mamutin, V. V.;
Vasil’ev, A. P.;
Lyutetskii, A. V.;
Il’inskaya, N. D.;
Usikova, A. A.;
Zadiranov, Yu. M.;
Maleev, N. A.;
Sofronov, A. N.;
Firsov, D. A.;
Vorob’ev, L. E.;
Ustinov, V. M.

Publication type:

Article

Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range.

Published in:

Technical Physics Letters, 2018, v. 44, n. 2, p. 174, doi. 10.1134/S1063785018020189

By:

Buyalo, M. S.;
Gadzhiyev, I. M.;
Il'inskaya, N. D.;
Usikova, A. A.;
Novikov, I. I.;
Karachinsky, L. Ya.;
Kolodeznyi, E. S.;
Bougrov, V. E.;
Egorov, A. Yu.;
Portnoi, E. L.

Publication type:

Article

Structural approach to enhance the fracture resistance of high-strength metallic materials.

Published in:

International Applied Mechanics, 2006, v. 42, n. 8, p. 904, doi. 10.1007/s10778-006-0158-0

By:

Bastun, V.;
Nizhnik, S.;
Usikova, G.

Publication type:

Article

Laws of Influence of Structural Characteristics on the Strength and Crack Resistance of Aging Metallic Materials.

Published in:

International Applied Mechanics, 2005, v. 41, n. 1, p. 70, doi. 10.1007/s10778-005-0060-1

By:

Nizhnik, S. B.;
Usikova, G. I.

Publication type:

Article

p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 2, p. 1, doi. 10.1002/pssa.202100456

By:

Karandashev, Sergey A.;
Lukhmyrina, Tatiana S.;
Matveev, Boris A.;
Remenny, Maxim A.;
Usikova, Anna A.

Publication type:

Article

InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 7, p. 1, doi. 10.1002/pssa.201700694

By:

Il'inskaya, Natalya D.;
Karandashev, Sergey A.;
Lavrov, Al'bert A.;
Matveev, Boris A.;
Remennyi, Maxim A.;
Stus’, Nicolay M.;
Usikova, Anna A.

Publication type:

Article

Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices.

Published in:

JETP Letters, 2016, v. 103, n. 2, p. 122, doi. 10.1134/S002136401602003X

By:

Altukhov, I.;
Dizhur, S.;
Kagan, M.;
Paprotskiy, S.;
Khval'kovskii, N.;
Buravlev, A.;
Vasil'ev, A.;
Zadiranov, Yu.;
Il'inskaya, N.;
Usikova, A.;
Ustinov, V.

Publication type:

Article

Electronic Transport in InAs/AlSb Superlattices with Electric Domains.

Published in:

Journal of Communications Technology & Electronics, 2022, v. 67, n. 7, p. 882, doi. 10.1134/S1064226922070026

By:

Altukhov, I. V.;
Dizhur, S. E.;
Kagan, M. S.;
Paprotskiy, S. K.;
Khvalkovskiy, N. A.;
Il'inskaya, N. D.;
Usikova, A. A.;
Baranov, A. N.;
Teissier, R.

Publication type:

Article

Features of Tunneling Current in Superlattices with Electrical Domains.

Published in:

Journal of Communications Technology & Electronics, 2019, v. 64, n. 10, p. 1140, doi. 10.1134/S1064226919090158

By:

Paprotskiy, S. K.;
Altukhov, I. V.;
Kagan, M. S.;
Khval'kovskiy, N. A.;
Kohn, I. A.;
Il'inskaya, N. D.;
Usikova, A. A.;
Baranov, A. N.;
Teissier, R.

Publication type:

Article

On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb).

Published in:

Semiconductors, 2023, v. 57, n. 13, p. 621, doi. 10.1134/S1063782623030193

By:

Zakgeim, A. L.;
Karandashev, S. A.;
Klimov, A. A.;
Kunkov, R. E.;
Lukhmyrina, T. S.;
Matveev, B. A.;
Remennyi, M. A.;
Usikova, A. A.;
Chernyakov, A. E.

Publication type:

Article

Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 930, doi. 10.1134/S1063782619070248

By:

Vasilyeva, G. Yu.;
Greshnov, A. A.;
Vasilyev, Yu. B.;
Mikhailov, N. N.;
Usikova, A. A.;
Haug, R. J.

Publication type:

Article

Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1603, doi. 10.1134/S106378261812014X

By:

Mamutin, V. V.;
Ilyinskaya, N. D.;
Usikova, A. A.;
Lyutetskiy, A. V.

Publication type:

Article

Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 745, doi. 10.1134/S1063782618060039

By:

Babichev, A. V.;
Kurochkin, A. S.;
Kolodeznyi, E. C.;
Filimonov, A. V.;
Usikova, A. A.;
Nevedomsky, V. N.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Egorov, A. Yu.

Publication type:

Article

Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 622, doi. 10.1134/S1063782618050056

By:

Evropeytsev, E. A.;
Semenov, A. N.;
Nechaev, D. V.;
Jmerik, V. N.;
Kaibyshev, V. Kh.;
Troshkov, S. I.;
Brunkov, P. N.;
Usikova, A. A.;
Ivanov, S. V.;
Toropov, A. A.

Publication type:

Article

Investigation of the Modified Structure of a Quantum Cascade Laser.

Published in:

Semiconductors, 2018, v. 52, n. 1, p. 126, doi. 10.1134/S106378261801013X

By:

Mamutin, V.;
Maleev, N.;
Vasilyev, A.;
Ilyinskaya, N.;
Zadiranov, Yu.;
Usikova, A.;
Yagovkina, M.;
Shernyakov, Yu.;
Ustinov, V.

Publication type:

Article

Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 260, doi. 10.1134/S1063782617020269

By:

Zakgeim, A.;
Il'inskaya, N.;
Karandashev, S.;
Lavrov, A.;
Matveev, B.;
Remennyy, M.;
Stus', N.;
Usikova, A.;
Cherniakov, A.

Publication type:

Article

On the gain properties of 'thin' elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1412, doi. 10.1134/S1063782616100201

By:

Novikov, I.;
Karachinsky, L.;
Kolodeznyi, E.;
Bougrov, V.;
Kurochkin, A.;
Gladyshev, A.;
Babichev, A.;
Gadzhiev, I.;
Buyalo, M.;
Zadiranov, Yu.;
Usikova, A.;
Shernyakov, Yu.;
Savelyev, A.;
Nyapshaev, I.;
Egorov, A.

Publication type:

Article

Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 828, doi. 10.1134/S1063782616060051

By:

Gadzhiyev, I.;
Buyalo, M.;
Gubenko, A.;
Egorov, A.;
Usikova, A.;
Il'inskaya, N.;
Lyutetskiy, A.;
Zadiranov, Yu.;
Portnoi, E.

Publication type:

Article

Photodiode 1 × 64 linear array based on a double p-InAsSbP/ n-InAsSb/ n-InAs heterostructure.

Published in:

Semiconductors, 2016, v. 50, n. 5, p. 646, doi. 10.1134/S1063782616050122

By:

Il'inskaya, N.;
Karandashev, S.;
Karpukhina, N.;
Lavrov, A.;
Matveev, B.;
Remennyi, M.;
Stus, N.;
Usikova, A.

Publication type:

Article

Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 247, doi. 10.1134/S1063782615020049

By:

Belyaev, K.;
Usikova, A.;
Jmerik, V.;
Kop'ev, P.;
Ivanov, S.;
Toropov, A.;
Brunkov, P.

Publication type:

Article

Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1217, doi. 10.1134/S1063782614090024

By:

Andreev, V.;
Grebenshchikova, E.;
Dmitriev, P.;
Ilinskaya, N.;
Kalinovsky, V.;
Kontrosh, E.;
Malevskaya, A.;
Usikova, A.

Publication type:

Article

Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1570, doi. 10.1134/S1063782613120191

By:

Usikova, A. A.;
Il’inskaya, N. D.;
Matveev, B. A.;
Shubina, T. V.;
Kop’ev, P. S.

Publication type:

Article

Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1478, doi. 10.1134/S1063782613110080

By:

Kagan, M.;
Altukhov, I.;
Baranov, A.;
Il'inskaya, N.;
Paprotskiy, S.;
Teissier, R.;
Usikova, A.

Publication type:

Article

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters.

Published in:

Semiconductors, 2011, v. 45, n. 9, p. 1219, doi. 10.1134/S1063782611090193

By:

Soldatenkov, F.;
Sorokina, S.;
Timoshina, N.;
Khvostikov, V.;
Zadiranov, Y.;
Rastegaeva, M.;
Usikova, A.

Publication type:

Article

Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1064, doi. 10.1134/S1063782610080191

By:

Terent'ev, Ya. V.;
Mukhin, M. S.;
Solov'ev, V. A.;
Semenov, A. N.;
Meltser, B. Ya.;
Usikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 672, doi. 10.1134/S1063782610050222

By:

Semenov, A. N.;
Terent'ev, Ya. V.;
Meltser, B. Ya.;
Solov'ev, V. A.;
Popova, T. V.;
Nashchekin, A. V.;
Andreev, I. A.;
Kunitsyna, E. V.;
Usikova, A. A.;
Yakovlev, Yu. P.;
Ivanov, S. V.

Publication type:

Article

Spin injection in GaAs/GaSb quantum-well heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 194, doi. 10.1134/S1063782610020107

By:

Terent'ev, Ya. V.;
Toropov, A. A.;
Meltser, B. Ya.;
Semenov, A. N.;
Solov'ev, V. A.;
Sedova, I. V.;
Usikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Array of InGaAsSb light-emitting diodes (λ = 3.7 μm).

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 508, doi. 10.1134/S1063782609040198

By:

Zakheim, A. L.;
Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus', N. M.;
Usikova, A. A.;
Chernyakov, A. E.

Publication type:

Article

Highly sensitive submillimeter InSb photodetectors.

Published in:

Semiconductors, 2008, v. 42, n. 10, p. 1234, doi. 10.1134/S1063782608100163

By:

Vasilyev, Yu.;
Usikova, A.;
Il’inskaya, N.;
Petrov, P.;
Ivanov, Yu.

Publication type:

Article

Large-magnitude spin polarization of electrons in an InAs-based diode structure.

Published in:

Semiconductors, 2007, v. 41, n. 11, p. 1293, doi. 10.1134/S1063782607110024

By:

Terent'ev, Ya. V.;
Lyublinskaya, O. G.;
Usikova, A. A.;
Toropov, A. A.;
Solov'ev, V. A.;
Ivanov, S. V.

Publication type:

Article

Anomalous electron spin splitting in InAs pumped by injection.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 570, doi. 10.1134/S1063782607050181

By:

Terent'ev, Ya.;
Lyublinskaya, O. G.;
Toropov, A. A.;
Solov'ev, V. A.;
Sorokin, S. V.;
Usikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Modification of isolation methods and physico-biochemical properties of preparations of fungal oxidoreductases.

Published in:

Regulatory Mechanisms in Biosystems, 2020, v. 11, n. 2, p. 310, doi. 10.15421/022047

By:

Fedotov, O. V.;
Usikova, Z. L.

Publication type:

Article

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber.

Published in:

Photonics, 2023, v. 10, n. 1, p. 17, doi. 10.3390/photonics10010017

By:

Varlamov, Andrei;
Agruzov, Peter;
Parfenov, Mikhail;
Tronev, Aleksandr;
Ilichev, Igor;
Usikova, Anna;
Shamrai, Aleksandr

Publication type:

Article

Micro-Photoluminescence Studies of CdSe/ZnSe Quantum Dot Structures Grown under Different Conditions.

Published in:

Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-117, doi. 10.12693/APhysPolA.129.A-117

By:

RAKHLIN, M. V.;
SOROKIN, S. V.;
SEDOVA, I. V.;
USIKOVA, A. A.;
GRONIN, S. V.;
BELYAEV, K. G.;
IVANOV, S. V.;
TOROPOV, A. A.

Publication type:

Article

Negative Differential Conductivity in InAs/AlSb Superlattices.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 2, p. 210

By:

KAGANA, M. S.;
ALTUKHOV, I. V.;
BARANOV, A. N.;
IL'YNSKAYA, N. D.;
PAPROTSKIY, S. K.;
SINIS, V. P.;
TEISSIER, R.;
USIKOVA, A. A.

Publication type:

Article

Longwave (λ0.1 = 10 μm, 296 K) Infrared Photodetectors Based on InAsSb0.38 Solid Solution.

Published in:

Optics & Spectroscopy, 2024, v. 132, n. 2, p. 158, doi. 10.1134/S0030400X24020115

By:

Kunkov, R. E.;
Klimov, A. A.;
Lebedeva, N. M.;
Lukhmyrina, T. S.;
Matveev, B. A.;
Remennyy, M. A.;
Usikova, A. A.

Publication type:

Article

On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions.

Published in:

Optics & Spectroscopy, 2023, v. 131, n. 1, p. 31, doi. 10.1134/S0030400X23030116

By:

Karandashev, S. A.;
Klimov, A. A.;
Lukhmyrina, T. S.;
Matveev, B. A.;
Remennyi, M. A.;
Usikova, A. A.

Publication type:

Article

On the Use of Indium Arsenide as the Waveguide Material in the Measurements by Attenuated Total Reflectance.

Published in:

Optics & Spectroscopy, 2021, v. 129, n. 11, p. 1231, doi. 10.1134/S0030400X21090101

By:

Karandashev, S. A.;
Lukhmyrina, T. S.;
Matveev, B. A.;
Remennyi, M. A.;
Usikova, A. A.

Publication type:

Article

Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers.

Published in:

Technical Physics, 2019, v. 64, n. 10, p. 1509, doi. 10.1134/S106378421910013X

By:

Levin, R. V.;
Pushnyi, B. V.;
Fedorov, I. V.;
Usikova, A. A.;
Nevedomskii, V. N.;
Bazhenov, N. L.;
Mynbaev, K. D.;
Pavlov, N. V.;
Zegrya, G. G.

Publication type:

Article

Lasing in 9.6-μm Quantum Cascade Lasers.

Published in:

Technical Physics, 2018, v. 63, n. 10, p. 1511, doi. 10.1134/S1063784218100043

By:

Babichev, A. V.;
Gusev, G. A.;
Sofronov, A. N.;
Firsov, D. A.;
Vorob’ev, L. E.;
Usikova, A. A.;
Zadiranov, Yu. M.;
Il’inskaya, N. D.;
Nevedomskii, V. N.;
Dyudelev, V. V.;
Sokolovskii, G. S.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Egorov, A. Yu.

Publication type:

Article

InAsSbP Photodiodes for 2.6-2.8-µm Wavelengths.

Published in:

Technical Physics, 2018, v. 63, n. 2, p. 226, doi. 10.1134/S1063784218020172

By:

Il'inskaya, N. D.;
Karandashev, S. A.;
Lavrov, A. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus, N. M.;
Usikova, A. A.

Publication type:

Article

Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.

Published in:

Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152

By:

Lebedeva, N.;
Usikova, A.;
Evstropov, V.;
Lebedev, M.;
Ulin, V.;
Lantratov, V.;
Andreev, V.

Publication type:

Article

Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1503, doi. 10.1002/pssb.201600064

By:

Toropov, A. A.;
Evropeytsev, E. A.;
Sorokin, S. V.;
Klimko, G. V.;
Gronin, S. V.;
Sedova, I. V.;
Kalinovskii, V. S.;
Kontrosh, E. V.;
Usikova, A. A.;
Il'inskaya, N. D.;
Ivanov, S. V.

Publication type:

Article

Metal Electrodes for Filtering the Localized Fundamental Mode of a Ridge Optical Waveguide on a Thin Lithium Niobate Nanofilm.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 20, p. 2755, doi. 10.3390/nano13202755

By:

Parfenov, Mikhail;
Agruzov, Petr;
Tronev, Aleksandr;
Ilichev, Igor;
Usikova, Anna;
Zadiranov, Yurii;
Shamrai, Aleksandr

Publication type:

Article

NON-RESONANT TUNNELLING IN SHORT-PERIOD SUPERLATTICES WITH OPTICAL CAVITIES.

Published in:

Lithuanian Journal of Physics, 2014, v. 54, n. 1, p. 50, doi. 10.3952/lithjphys.54112

By:

Kagan, M. S.;
Altukhov, I. V.;
Paprotskiy, S. K.;
Baranov, A. N.;
Teissier, R.;
Il'inskaya, N. D.;
Usikova, A. A.;
Buravlev, A. D.;
Ustinov, V. M.

Publication type:

Article

Power increase in Q-switched two-sectional quantum well lasers due to Stark effect.

Published in:

Technical Physics Letters, 2015, v. 41, n. 10, p. 984, doi. 10.1134/S106378501510020X

By:

Buyalo, M.;
Gadzhiyev, I.;
Usikova, A.;
Zadiranov, Yu.;
Il'inskaya, N.;
Gubenko, A.;
Egorov, A.;
Portnoi, E.

Publication type:

Article

MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells.

Published in:

Technical Physics Letters, 2015, v. 41, n. 9, p. 905, doi. 10.1134/S1063785015090229

By:

Klimko, G.;
Komissarova, T.;
Sorokin, S.;
Kontrosh, E.;
Lebedeva, N.;
Usikova, A.;
Il'inskaya, N.;
Kalinovskii, V.;
Ivanov, S.

Publication type:

Article

Optically pumped midinfrared (λ = 3.6 μm) light-emitting diodes based on indium arsenide with photonic crystals.

Published in:

Technical Physics Letters, 2008, v. 34, n. 5, p. 405, doi. 10.1134/S1063785008050131

By:

Zadiranov, Yu. M.;
Zotova, N. V.;
Il'inskaya, N. D.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyĭ, M. A.;
Stus', N. M.;
Usikova, A. A.

Publication type:

Article