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Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors.
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- Semiconductors, 2023, v. 57, n. 12, p. 524, doi. 10.1134/S1063782623080031
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- Article
Quality Assessment of Processed Graphene Chips for Biosensor Application.
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- Materials (1996-1944), 2023, v. 16, n. 16, p. 5628, doi. 10.3390/ma16165628
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- Article
Calculation of the Admissible Time Delay of Discrete Samples During Real-Time Measurements.
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- Measurement Techniques, 2022, v. 65, n. 6, p. 412, doi. 10.1007/s11018-022-02098-1
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- Article
Dark Energy from Virtual Gravitons (GCDM Model vs. ΛCDM Model).
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- Universe (2218-1997), 2022, v. 8, n. 9, p. 464, doi. 10.3390/universe8090464
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- Article
Method for Concurrent Identification of a Linear Dynamic Measurement System Based on Preliminary Nonlinear Transformation of the Input Signal.
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- Measurement Techniques, 2022, v. 64, n. 12, p. 949, doi. 10.1007/s11018-022-02027-2
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- Article
Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses.
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- Biosensors (2079-6374), 2022, v. 12, n. 1, p. 8, doi. 10.3390/bios12010008
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- Article
Maly Tulukui Deposit in Southeastern Transbaikalia: Geomechanics and Geodynamics.
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- Journal of Mining Science, 2021, v. 57, n. 5, p. 713, doi. 10.1134/S106273912105001X
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- Article
Graphene on SiC Substrate as Biosensor: Theoretical Background, Preparation, and Characterization.
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- Materials (1996-1944), 2021, v. 14, n. 3, p. 590, doi. 10.3390/ma14030590
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- Article
Design of Smart Sensors Based on the Introduction of Minimal Structural Redundancy.
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- Measurement Techniques, 2021, v. 63, n. 11, p. 870, doi. 10.1007/s11018-021-01871-y
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- Article
Studying the Sensitivity of Graphene for Biosensor Applications.
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- Technical Physics Letters, 2020, v. 46, n. 5, p. 462, doi. 10.1134/S1063785020050296
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- Article
Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59033-z
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- Article
Graphene/SiC dies for electrochemical blood-type sensing.
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- Proceedings of the Estonian Academy of Sciences, 2019, v. 68, n. 2, p. 207, doi. 10.3176/proc.2019.2.13
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- Article
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.
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- Semiconductors, 2018, v. 52, n. 7, p. 942, doi. 10.1134/S1063782618070072
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- Article
Photolysis of Doped Gallium Nitride.
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- High Energy Chemistry, 2018, v. 52, n. 2, p. 196, doi. 10.1134/S0018143918020169
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- Article
Geoecological Assessment of the Malyi Khingan Ridge Area Using Land Surface Remote Sensing Data.
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- Journal of Mining Science, 2018, v. 54, n. 2, p. 323, doi. 10.1134/S1062739118023690
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- Article
Investigation of water splitting using III-N structures.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600744
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- Article
Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence.
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- Scientific Reports, 2016, p. 37511, doi. 10.1038/srep37511
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- Article
On the fractal nature of light-emitting structures based on III-N nanomaterials and related phenomena.
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- Semiconductors, 2016, v. 50, n. 9, p. 1173, doi. 10.1134/S1063782616090207
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- Article
Electrochemical etching of p-n-GaN/AlGaN photoelectrodes.
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- Technical Physics Letters, 2016, v. 42, n. 5, p. 482, doi. 10.1134/S1063785016050151
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- Article
Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE.
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- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2178, doi. 10.1007/s11664-015-4305-4
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- Article
Photo-Electrochemical Etching in the Process of Direct H2 Generation by Illumination of GaN-Based Material Structures Immersed in Water.
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- International Journal of High Speed Electronics & Systems, 2016, v. 25, n. 1/2, p. -1, doi. 10.1142/S0129156416400097
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- Article
Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 10, p. 575, doi. 10.1002/pssr.201510315
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- Article
Radiation hardness of n-GaN schottky diodes.
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- Semiconductors, 2015, v. 49, n. 10, p. 1341, doi. 10.1134/S1063782615100127
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- Article
Defect-Related Luminescence in Undoped GaN Grown by HVPE.
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- Journal of Electronic Materials, 2015, v. 44, n. 5, p. 1281, doi. 10.1007/s11664-014-3540-4
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- Article
Current state of the art of exploration of endogenic deposits of noble metals in the Lesser Khingan Range in the Far East of Russia.
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- Russian Journal of Pacific Geology, 2015, v. 9, n. 1, p. 57, doi. 10.1134/S1819714015010066
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- Article
Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy.
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- Technical Physics Letters, 2014, v. 40, n. 7, p. 574, doi. 10.1134/S1063785014070104
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- Article
Present-day stress-strain state in the upper crust of the Amurian lithosphere plate.
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- Izvestiya, Physics of the Solid Earth, 2014, v. 50, n. 3, p. 444, doi. 10.1134/S1069351314030082
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- Article
Geomechanical assessment of mining conditions in the Khingansk manganese ore body.
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- Journal of Mining Science, 2014, v. 50, n. 1, p. 10, doi. 10.1134/S1062739114010025
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- Article
Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount.
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- Semiconductors, 2013, v. 47, n. 3, p. 409, doi. 10.1134/S1063782613030160
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- Article
The 3d relief models and structure of the Earth's upper crust in the Amur region.
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- Russian Journal of Pacific Geology, 2011, v. 5, n. 6, p. 492, doi. 10.1134/S1819714011060108
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- Article
Semi-polar nitride surfaces and heterostructures.
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- Physica Status Solidi (B), 2011, v. 248, n. 3, p. 561, doi. 10.1002/pssb.201046422
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- Article
Layer thickness dependent carrier recombination rate in HVPE GaN.
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- Physica Status Solidi (B), 2010, v. 247, n. 7, p. 1703, doi. 10.1002/pssb.200983532
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- Article
Deep UV light emitting diodes grown by gas source molecular beam epitaxy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 764, doi. 10.1007/s10854-007-9405-3
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- Article
Cosmological Acceleration from Virtual Gravitons.
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- 2008
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- Letter
Localized states in the active region of blue LEDs related to a system of extended defects.
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- Technical Physics Letters, 2007, v. 33, n. 2, p. 143, doi. 10.1134/S1063785007020150
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- Article
Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers.
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- Semiconductors, 2005, v. 39, n. 9, p. 1045, doi. 10.1134/1.2042596
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- Article
Deep Levels in the Band Gap of GaN Layers Irradiated with Protons.
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- Semiconductors, 2002, v. 36, n. 12, p. 1352, doi. 10.1134/1.1529245
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- Article
Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells.
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- Semiconductors, 2002, v. 36, n. 6, p. 641, doi. 10.1134/1.1485662
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- Article
Comparative Study of InGaN/GaN Structures Grown by MOCVD Using Various Growth Sequences.
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- Physica Status Solidi (B), 2001, v. 228, n. 1, p. 95, doi. 10.1002/1521-3951(200111)228:1<95::AID-PSSB95>3.0.CO;2-Q
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- Article
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped Al[sub x]Ga[sub 1 – ][sub x]N Epilayers on Sapphire.
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- Semiconductors, 2000, v. 34, n. 11, p. 1248, doi. 10.1134/1.1325417
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- Article
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment.
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- Semiconductors, 2000, v. 34, n. 11, p. 1301, doi. 10.1134/1.1325427
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- Article
Specifics of MOCVD Formation of In[sub x]Ga[sub 1 – ][sub x]N Inclusions in a GaN Matrix.
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- Semiconductors, 2000, v. 34, n. 6, p. 621, doi. 10.1134/1.1188041
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- Article
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots.
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- Semiconductors, 2000, v. 34, n. 4, p. 481, doi. 10.1134/1.1188011
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- Article
On an Unusual Azimuthal Orientational Relationship in the System Gallium Nitride Layer on Spinel Substrate.
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- Crystallography Reports, 2000, v. 45, n. 2, p. 312, doi. 10.1134/1.171188
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- Article
DYNAMOMETRISCHE EINSCHÄTZUNG DER FIXATIONSFESTIGKEIT VON BIOIMPLANTATEN IN KANINCHENWIRBELN.
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- Biomedical Engineering / Biomedizinische Technik, 2000, v. 45, p. 125, doi. 10.1515/bmte.2000.45.s1.125
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- Article
Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 435, doi. 10.1002/(SICI)1521-3951(199911)216:1<435::AID-PSSB435>3.0.CO;2-O
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- Article
Photopumped InGaN/GaN/AlGaN Vertical Cavity Surface Emitting Laser Operating at Room Temperature.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 511, doi. 10.1002/(SICI)1521-3951(199911)216:1<511::AID-PSSB511>3.0.CO;2-7
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- Article
Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 533, doi. 10.1002/(SICI)1521-3951(199911)216:1<533::AID-PSSB533>3.0.CO;2-S
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- Article
Mosaic Structure and Si Doping Related Peculiarities of Charge Carrier Transport in III-V Nitrides.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 581, doi. 10.1002/(SICI)1521-3951(199911)216:1<581::AID-PSSB581>3.0.CO;2-G
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- Article
Investigation of MOVPE-grown GaN layers doped with As atoms.
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- Semiconductors, 1999, v. 33, n. 7, p. 728, doi. 10.1134/1.1187770
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- Article