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Nanocarbon structures formed in a universal plasma reactor.
Published in:
High Energy Chemistry, 2014, v. 48, n. 4, p. 287, doi. 10.1134/S0018143914040092
By:
- Messerle, V.;
- Ustimenko, A.;
- Ushanov, V.;
- Lukyachshenko, V.
Publication type:
Article
Long-service-life plasma arc torch.
Published in:
High Energy Chemistry, 2009, v. 43, n. 4, p. 318, doi. 10.1134/S0018143909040134
By:
- Golish, V.;
- Karpenko, E.;
- Luk’yashchenko, V.;
- Messerle, V.;
- Ustimenko, A.;
- Ushanov, V.
Publication type:
Article
Cytogenomic epileptology.
Published in:
Molecular Cytogenetics (17558166), 2023, v. 16, n. 1, p. 1, doi. 10.1186/s13039-022-00634-w
By:
- Iourov, Ivan Y.;
- Gerasimov, Alexandr P.;
- Zelenova, Maria A.;
- Ivanova, Natalya E.;
- Kurinnaia, Oksana S.;
- Zabrodskaya, Yulia M.;
- Demidova, Irina A.;
- Barantsevich, Evgeny R.;
- Vasin, Kirill S.;
- Kolotii, Alexey D.;
- Ushanov, Vseslav V.;
- Sitovskaya, Darya A.;
- Lobzhanidze, Timur B.-A.;
- Iuditskaia, Maria E.;
- Iakushev, Nikita S.;
- Zhumatov, Muslim M.;
- Vorsanova, Svetlana G.;
- Samochernyh, Konstantin A.
Publication type:
Article
Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial.
Published in:
Semiconductors, 2023, v. 57, n. 13, p. 615, doi. 10.1134/S1063782623050160
By:
- Snigirev, L. A.;
- Ushanov, V. I.;
- Ivanov, A. A.;
- Bert, N. A.;
- Kirilenko, D. A.;
- Yagovkina, M. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. P.;
- Kasatkin, I. A.;
- Chaldyshev, V. V.
Publication type:
Article
Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2023, v. 57, n. 9, p. 405, doi. 10.1134/S1063782623060155
By:
- Semyagin, B. R.;
- Kolesnikov, A. V.;
- Putyato, M. A.;
- Preobrazhenskii, V. V.;
- Popova, T. B.;
- Ushanov, V. I.;
- Chaldyshev, V. V.
Publication type:
Article
Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1704, doi. 10.1134/S1063782618130213
By:
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Resonant Optical Reflection from AsSb-AlGaAs Metamaterials and Structures.
Published in:
Semiconductors, 2018, v. 52, n. 4, p. 468, doi. 10.1134/S1063782618040292
By:
- Ushanov, V. I.;
- Chaldyshev, V. V.;
- Preobrazhenskiy, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.
Publication type:
Article
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1595, doi. 10.1134/S1063782616120253
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.
Published in:
Semiconductors, 2015, v. 49, n. 12, p. 1587, doi. 10.1134/S1063782615120234
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Bert, N.;
- Nevedomsky, V.;
- Il'inskaya, N.;
- Lebedeva, N.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article
Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix.
Published in:
Semiconductors, 2013, v. 47, n. 8, p. 1046, doi. 10.1134/S1063782613080198
By:
- Ushanov, V.;
- Chaldyshev, V.;
- Preobrazhenskii, V.;
- Putyato, M.;
- Semyagin, B.
Publication type:
Article

Found: 10

Nanocarbon structures formed in a universal plasma reactor.

Long-service-life plasma arc torch.

Cytogenomic epileptology.

Structure and Optical Properties of a Composite AsSb–Al<sub>0.6</sub>Ga<sub>0.4</sub>As<sub>0.97</sub>Sb<sub>0.03</sub> Metamaterial.

Growth of GaAs<sub>1–x</sub>Bi<sub>x</sub> Layers by Molecular-Beam Epitaxy.

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature.

Resonant Optical Reflection from AsSb-AlGaAs Metamaterials and Structures.

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs.

Plasmon resonance in new AsSb-AlGaAs metal-semiconductor metamaterials.

Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix.