Works by Uraoka, Yukiharu

Results: 30

Straight-Line-Shaped Grooves Induced by Agglomeration in Thin Si Films Obtained by the Continuous-wave Laser Crystallization of A-Si on Insulator.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2781, doi. 10.1007/s11664-024-10955-8

By:

Sasaki, Nobuo;
Takayama, Satoshi;
Sasai, Rikuto;
Uraoka, Yukiharu

Publication type:

Article

22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification.

Published in:

SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 276, doi. 10.1002/sdtp.17508

By:

Sihapitak, Pongsakorn;
Bermundo, Juan Paolo S.;
Uraoka, Yukiharu

Publication type:

Article

P‐6: Study of source‐gated transistor (SGT) for output current enhancement through TCAD simulation.

Published in:

SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 1798, doi. 10.1002/sdtp.16954

By:

Sihapitak, Pongsakorn;
Bermundo, Juan Paolo S.;
Uraoka, Yukiharu

Publication type:

Article

P‐13: Student Poster: Comprehensive Study of the TFTs Fabricated in the (100)‐Oriented Grain‐Boundary‐Free Silicon Thin Film Obtained by Green CW‐Laser ateral Crystallization.

Published in:

SID Symposium Digest of Technical Papers, 2022, v. 53, n. 1, p. 1085, doi. 10.1002/sdtp.15688

By:

Takayama, Satoshi;
Sasaki, Nobuo;
Uraoka, Yukiharu

Publication type:

Article

31‐2: Student Paper: Fermi Level Prediction of Solution‐processed Ultra‐wide Band gap a‐Ga2Ox via Supervised Machine Learning Models.

Published in:

SID Symposium Digest of Technical Papers, 2022, v. 53, n. 1, p. 369, doi. 10.1002/sdtp.15497

By:

Purnawati, Diki;
Regonia, Paul Rossener;
Bermundo, Juan Paolo;
Ikeda, Kazushi;
Uraoka, Yukiharu

Publication type:

Article

29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display.

Published in:

SID Symposium Digest of Technical Papers, 2021, v. 52, p. 395, doi. 10.1002/sdtp.15134

By:

Uraoka, Yukiharu;
Takahashi, Takanori;
Fujii, Mami;
Bermundo, J.P.;
Miyanaga, Ryoko;
Uenuma, Mutsunori

Publication type:

Article

P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment.

Published in:

SID Symposium Digest of Technical Papers, 2020, v. 51, n. 1, p. 1350, doi. 10.1002/sdtp.14134

By:

Corsino, Dianne;
Bermundo, Juan Paolo;
Fujii, Mami N.;
Ishikawa, Yasuaki;
Ikenoue, Hiroshi;
Uraoka, Yukiharu

Publication type:

Article

7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors.

Published in:

SID Symposium Digest of Technical Papers, 2020, v. 51, n. 1, p. 71, doi. 10.1002/sdtp.13807

By:

Uraoka, Yukiharu;
Takahashi, Takanori;
Kise, Kahori;
Bermundo, Juan Paolo;
Fujii, Mami N.;
Uenuma, Mutsunori;
Ishikawa, Yasuaki

Publication type:

Article

P‐193: Late‐News Poster: Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient.

Published in:

SID Symposium Digest of Technical Papers, 2019, v. 50, n. 1, p. 1333, doi. 10.1002/sdtp.13181

By:

Jallorina, Michael Paul A.;
Bermundo, Juan Paolo S.;
Fujii, Mami N.;
Ishikawa, Yasuaki;
Uraoka, Yukiharu

Publication type:

Article

30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO.

Published in:

SID Symposium Digest of Technical Papers, 2019, v. 50, n. 1, p. 422, doi. 10.1002/sdtp.12946

By:

Bermundo, Juan Paolo S.;
Kulchaisit, Chaiyanan;
Corsino, Dianne C.;
Syairah, Aimi;
Fujii, Mami N.;
Ikenoue, Hiroshi;
Ishikawa, Yasuaki;
Uraoka, Yukiharu

Publication type:

Article

P‐196: Late‐News Poster: Off Current Reduction of BG poly‐Si TFT by PLAS Process.

Published in:

SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 1284, doi. 10.1002/sdtp.12450

By:

Mochii (Student), Ryosuke;
Fujii, Mami N.;
Ishikawa, Yasuaki;
Sugawara, Yuta;
Nodera, Nobutake;
Matsumoto, Takao;
Uraoka, Yukiharu

Publication type:

Article

57‐3: Folded Pixel Circuit Design in Grain‐Boundary Free (100) Oriented LTPS Stripes Fabricated by Selective CW‐laser Lateral Crystallization.

Published in:

SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 755, doi. 10.1002/sdtp.12348

By:

Sasaki, Nobuo;
Arif, Muhammad;
Uraoka, Yukiharu

Publication type:

Article

Growth of Highly-Oriented LTPS Films by CW Laser Lateral Crystallization.

Published in:

SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1317, doi. 10.1002/sdtp.10919

By:

Sasaki, Nobuo;
Nieda, Yoshiaki;
Hishitani, Daisuke;
Uraoka, Yukiharu

Publication type:

Article

Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2974, doi. 10.1007/s11664-021-08751-9

By:

Sasaki, Nobuo;
Arif, Muhammad;
Uraoka, Yukiharu;
Gotoh, Jun;
Sugimoto, Shigeto

Publication type:

Article

Improvement of Thermoelectric Properties of a-InGaZnO Thin Film by Optimizing Carrier Concentration.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 3, p. 1377, doi. 10.1007/s11664-015-4039-3

By:

Fujimoto, Yuta;
Uenuma, Mutsunori;
Ishikawa, Yasuaki;
Uraoka, Yukiharu

Publication type:

Article

Effects of Si and Ti impurities on electrical properties of sol-gel-derived amorphous SrTaO thin films by UV/O treatment.

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 112, n. 2, p. 425, doi. 10.1007/s00339-012-7425-1

By:

Lu, Li;
Nishida, Takashi;
Echizen, Masahiro;
Ishikawa, Yasuaki;
Uchiyama, Kiyoshi;
Uraoka, Yukiharu

Publication type:

Article

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

Published in:

Scientific Reports, 2015, p. 18168, doi. 10.1038/srep18168

By:

Fujii, Mami N.;
Ishikawa, Yasuaki;
Miwa, Kazumoto;
Okada, Hiromi;
Uraoka, Yukiharu;
Ono, Shimpei

Publication type:

Article

Biological Construction of Single-Walled Carbon Nanotube Electron Transfer Pathways in Dye-Sensitized Solar Cells.

Published in:

ChemSusChem, 2014, v. 7, n. 10, p. 2805, doi. 10.1002/cssc.201402514

By:

Inoue, Ippei;
Watanabe, Kiyoshi;
Yamauchi, Hirofumi;
Ishikawa, Yasuaki;
Yasueda, Hisashi;
Uraoka, Yukiharu;
Yamashita, Ichiro

Publication type:

Article

Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 1, p. 130, doi. 10.3390/cryst13010130

By:

Sasaki, Nobuo;
Takayama, Satoshi;
Sasai, Rikuto;
Uraoka, Yukiharu

Publication type:

Article

Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 5, p. 405, doi. 10.3390/cryst10050405

By:

Sasaki, Nobuo;
Arif, Muhammad;
Uraoka, Yukiharu;
Gotoh, Jun;
Sugimoto, Shigeto

Publication type:

Article

Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells.

Published in:

Progress in Photovoltaics, 2021, v. 29, n. 4, p. 423, doi. 10.1002/pip.3383

By:

Nguyen, Dong C.;
Ishikawa, Yasuaki;
Uraoka, Yukiharu

Publication type:

Article

Al2O3/TiO2 double layer anti-reflection coating film for crystalline silicon solar cells formed by spray pyrolysis.

Published in:

Energy Science & Engineering, 2016, v. 4, n. 4, p. 269, doi. 10.1002/ese3.123

By:

Kanda, Hiroyuki;
Uzum, Abdullah;
Harano, Norihisa;
Yoshinaga, Seiya;
Ishikawa, Yasuaki;
Uraoka, Yukiharu;
Fukui, Hidehito;
Harada, Tomitaro;
Ito, Seigo

Publication type:

Article

Voltage Linearity and Leakage Currents of Crystalline and Amorphous SrTa 2 O 6 Thin Films Fabricated by Sol-Gel Method.

Published in:

Ferroelectrics, 2011, v. 421, n. 1, p. 82, doi. 10.1080/00150193.2011.594354

By:

Lu, Li;
Nishida, Takashi;
Echizen, Masahiro;
Uchiyama, Kiyoshi;
Uraoka, Yukiharu

Publication type:

Article

Effect of Gold Nanoparticle Distribution in TiO on the Optical and Electrical Characteristics of Dye-Sensitized Solar Cells.

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2285-4

By:

Mayumi, Shuichi;
Ikeguchi, Yutaka;
Nakane, Daisuke;
Ishikawa, Yasuaki;
Uraoka, Yukiharu;
Ikeguchi, Mamoru

Publication type:

Article

Fabrication of Nanoshell-Based 3D Periodic Structures by Templating Process using Solution-derived ZnO.

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2186-6

By:

Araki, Shinji;
Ishikawa, Yasuaki;
Wang, Xudongfang;
Uenuma, Mutsunori;
Cho, Donghwi;
Jeon, Seokwoo;
Uraoka, Yukiharu

Publication type:

Article

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-19122-7

By:

Fukuda, Keisuke;
Miyamoto, Satoru;
Nakahara, Masahiro;
Suzuki, Shota;
Dhamrin, Marwan;
Maeda, Kensaku;
Fujiwara, Kozo;
Uraoka, Yukiharu;
Usami, Noritaka

Publication type:

Article

Electrical and Optical Properties of Nickel‐Oxide Films for Efficient Perovskite Solar Cells.

Published in:

Small Methods, 2020, v. 4, n. 9, p. 1, doi. 10.1002/smtd.202000454

By:

Hossain, Mohammad Ismail;
Hasan, A. K. Mahmud;
Qarony, Wayesh;
Shahiduzzaman, Md.;
Islam, M. A.;
Ishikawa, Yasuaki;
Uraoka, Yukiharu;
Amin, Nowshad;
Knipp, Dietmar;
Akhtaruzzaman, Md.;
Tsang, Yuen Hong

Publication type:

Article

Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO2/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900444

By:

Furukawa, Masaaki;
Uenuma, Mutsunori;
Ishikawa, Yasuaki;
Uraoka, Yukiharu

Publication type:

Article

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO2/GaN Interface.

Published in:

Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900368

By:

Uenuma, Mutsunori;
Ando, Ryota;
Furukawa, Masaaki;
Uraoka, Yukiharu

Publication type:

Article

Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa2O6 as Gate Insulator Deposited by Sputtering Method.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 5, p. N.PAG, doi. 10.1002/pssa.201700773

By:

Takahashi, Takanori;
Hoga, Takeshi;
Miyanaga, Ryoko;
Oikawa, Kento;
Fujii, Mami N.;
Ishikawa, Yasuaki;
Uraoka, Yukiharu;
Uchiyama, Kiyoshi

Publication type:

Article

Works by Uraoka, Yukiharu

Straight-Line-Shaped Grooves Induced by Agglomeration in Thin Si Films Obtained by the Continuous-wave Laser Crystallization of A-Si on Insulator.

22‐2: Significant Improvement of a‐IGZO Source‐Gated Transistor Current over Traditional Design through Architecture Modification.

P‐6: Study of source‐gated transistor (SGT) for output current enhancement through TCAD simulation.

P‐13: Student Poster: Comprehensive Study of the TFTs Fabricated in the (100)‐Oriented Grain‐Boundary‐Free Silicon Thin Film Obtained by Green CW‐Laser ateral Crystallization.

31‐2: Student Paper: Fermi Level Prediction of Solution‐processed Ultra‐wide Band gap a‐Ga<sub>2</sub>O<sub>x</sub> via Supervised Machine Learning Models.

29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display.

P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment.

7‐2: Invited Paper: Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors.

P‐193: Late‐News Poster: Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient.

30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO.

P‐196: Late‐News Poster: Off Current Reduction of BG poly‐Si TFT by PLAS Process.

57‐3: Folded Pixel Circuit Design in Grain‐Boundary Free (100) Oriented LTPS Stripes Fabricated by Selective CW‐laser Lateral Crystallization.

Growth of Highly-Oriented LTPS Films by CW Laser Lateral Crystallization.

Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2.

Improvement of Thermoelectric Properties of a-InGaZnO Thin Film by Optimizing Carrier Concentration.

Effects of Si and Ti impurities on electrical properties of sol-gel-derived amorphous SrTaO thin films by UV/O treatment.

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

Biological Construction of Single-Walled Carbon Nanotube Electron Transfer Pathways in Dye-Sensitized Solar Cells.

Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films.

Unseeded Crystal Growth of (100)-Oriented Grain-Boundary-Free Si Thin-Film by a Single Scan of the CW-Laser Lateral Crystallization of a-Si on Insulator.

Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells.

Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> double layer anti-reflection coating film for crystalline silicon solar cells formed by spray pyrolysis.

Voltage Linearity and Leakage Currents of Crystalline and Amorphous SrTa 2 O 6 Thin Films Fabricated by Sol-Gel Method.

Effect of Gold Nanoparticle Distribution in TiO on the Optical and Electrical Characteristics of Dye-Sensitized Solar Cells.

Fabrication of Nanoshell-Based 3D Periodic Structures by Templating Process using Solution-derived ZnO.

Epitaxial growth of SiGe films by annealing Al–Ge alloyed pastes on Si substrate.

Electrical and Optical Properties of Nickel‐Oxide Films for Efficient Perovskite Solar Cells.

Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO<sub>2</sub>/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing.

The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO<sub>2</sub>/GaN Interface.

Improvement of Amorphous InGaZnO Thin‐Film Transistor Using High‐k SrTa<sub>2</sub>O<sub>6</sub> as Gate Insulator Deposited by Sputtering Method.