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Limiting Thickness of Pore Walls Formed in Processes of Anode Etching of Heavily Doped Semiconductors.
- Published in:
- Technical Physics, 2023, v. 68, n. 12, p. 814, doi. 10.1134/S1063784223080376
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- Article
Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions.
- Published in:
- 2021
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- Publication type:
- Correction Notice
Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions.
- Published in:
- Technical Physics, 2019, v. 64, n. 10, p. 1492, doi. 10.1134/S1063784219100268
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- Article
Weakly Ordered Nanostructured Silver Disilicate and Its Colloidal Solutions: Preparation and Properties.
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- Technical Physics, 2019, v. 64, n. 6, p. 884, doi. 10.1134/S1063784219060033
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- Publication type:
- Article
Synthesis and isomerization of epoxides derived from 7-phenylsulfonyl-and 7-methylsulfonyl-6-methylidenebicyclo[3.1.1]heptanes.
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- Russian Journal of Organic Chemistry, 2006, v. 42, n. 10, p. 1440, doi. 10.1134/S1070428006100058
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- Article
Prototropic Isomerization of 1-Oxaspiro[2.3]hexane-5-carbonitrile and Methyl 1-Oxaspiro[2.3]hexane-5-carboxylate into the Corresponding 3-Hydroxymethylbicyclo[1.1.0]butane-1-carboxylic Acid Derivatives.
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- Russian Journal of Organic Chemistry, 2003, v. 39, n. 1, p. 33, doi. 10.1023/A:1023434410844
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- Publication type:
- Article
Synthesis and Dehydrobromination of 3-Bromomethyl- and 3-Bromo-3-methoxymethylcyclobutane-1-carbonitriles and Methyl 3-Bromomethyl- and 3-Bromo-3-methoxymethylcyclobutane-1-carboxylates.
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- Russian Journal of Organic Chemistry, 2003, v. 39, n. 1, p. 40, doi. 10.1023/A:1023486427682
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- Publication type:
- Article
Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons.
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- Semiconductors, 2024, v. 58, n. 4, p. 295, doi. 10.1134/S106378262404002X
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- Article
Plasmon Spectroscopy of Anisotropic Gold Nanoclusters on GaAs(001) Surface Passivated by Sulphur Atoms.
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- Semiconductors, 2023, v. 57, n. 7, p. 321, doi. 10.1134/S1063782623090063
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- Publication type:
- Article
Effect of Chemical Passivation of GaAs(001) Surface on Anisotropy and Orientation of Gold Nanoclusters Formed on It and Their Plasmons.
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- Semiconductors, 2023, v. 57, n. 4, p. 216, doi. 10.1134/S1063782623070060
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- Publication type:
- Article
Optical Spectroscopy of Schottky Nanostructures Au/GaAs: Plasmon Resonances and Anisotropy.
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- Semiconductors, 2020, v. 54, n. 14, p. 1877, doi. 10.1134/S1063782620140043
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- Publication type:
- Article
Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation.
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- Semiconductors, 2020, v. 54, n. 8, p. 900, doi. 10.1134/S1063782620080059
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- Publication type:
- Article
Gold Nanoclusters at the Interface Au/GaAs(001): Preparation, Characterization, and Plasmonic Spectroscopy.
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- Semiconductors, 2018, v. 52, n. 14, p. 1849, doi. 10.1134/S106378261814004X
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- Article
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism.
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- Semiconductors, 2017, v. 51, n. 4, p. 458, doi. 10.1134/S1063782617040212
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- Article
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments.
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- Semiconductors, 2017, v. 51, n. 4, p. 477, doi. 10.1134/S106378261704025X
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- Article
Surface of porous silicon under hydrophilization and hydrolytic degradation.
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- Semiconductors, 2014, v. 48, n. 9, p. 1211, doi. 10.1134/S1063782614090243
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- Article
Electron auger spectroscopy and reflectance anisotropy spectroscopy of monolayer nitride films on (001) surfaces of GaAs and GaSb crystals.
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- Semiconductors, 2012, v. 46, n. 11, p. 1432, doi. 10.1134/S106378261211005X
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- Publication type:
- Article
Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures.
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- Semiconductors, 2011, v. 45, n. 12, p. 1575, doi. 10.1134/S1063782611120037
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- Article
Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces.
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- Semiconductors, 2011, v. 45, n. 4, p. 431, doi. 10.1134/S1063782611040191
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- Publication type:
- Article
Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.
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- Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130
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- Article
Electrochemical pore formation mechanism in III–V crystals (Part I).
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- Semiconductors, 2007, v. 41, n. 7, p. 832, doi. 10.1134/S1063782607070111
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- Article
Electrochemical pore formation mechanism in III–V crystals (Part II).
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- Semiconductors, 2007, v. 41, n. 7, p. 845, doi. 10.1134/S1063782607070123
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- Publication type:
- Article
Diffusion-barrier contacts based on the TiN and Ti(Zr)B<sub>x</sub> interstitial phases in the microwave diodes for the range of 75–350 GHz.
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- Semiconductors, 2006, v. 40, n. 6, p. 734, doi. 10.1134/S1063782606060200
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- Publication type:
- Article
Specific Features of Epitaxial-Film Formation on Porous III–V Substrates.
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- Semiconductors, 2005, v. 39, n. 5, p. 523, doi. 10.1134/1.1923558
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- Article
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 65
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- Publication type:
- Article
Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.
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- Technical Physics Letters, 2002, v. 28, n. 9, p. 735
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- Publication type:
- Article
Unstrained epitaxial In[sub x]Ga[sub 1-x]As films obtained on porous GaAs.
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- Technical Physics Letters, 1999, v. 25, n. 11, p. 852, doi. 10.1134/1.1262659
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- Article
Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates.
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- Technical Physics Letters, 1999, v. 25, n. 1, p. 1, doi. 10.1134/1.1262360
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- Article
Silicon Monoxide Carbonized by Fluorocarbon As a Composite Material for Anodes of Lithium-Ion Batteries.
- Published in:
- Technical Physics, 2022, v. 66, n. 4, p. 1228, doi. 10.1134/S1063784221090103
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- Publication type:
- Article
Silicon Monoxide Carbonized by Fluorocarbon As a Composite Material for Anodes of Lithium-Ion Batteries.
- Published in:
- Technical Physics, 2021, v. 66, n. 11, p. 1228, doi. 10.1134/S1063784221090103
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- Publication type:
- Article
Liquid-metal field electron source based on porous GaP.
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- Technical Physics, 2017, v. 62, n. 9, p. 1424, doi. 10.1134/S1063784217090171
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- Article
Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.
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- Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152
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- Article
Porous silicon and its applications in biology and medicine.
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- Technical Physics, 2014, v. 59, n. 1, p. 66, doi. 10.1134/S1063784214010083
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- Article
Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of <II–VI>/GaAs.
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- Semiconductors, 2002, v. 36, n. 1, p. 54, doi. 10.1134/1.1434514
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- Publication type:
- Article
Nanorelief of an oxidized cleaved surface of a grid of alternating Ga[sub 0.7]Al[sub 0.3]As and GaAs heterolayers.
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- Semiconductors, 1999, v. 33, n. 5, p. 555, doi. 10.1134/1.1187727
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- Publication type:
- Article
The Effect of Thermal Treatment on Properties of Composite Silicon–Carbon Anodes for Lithium-Ion Batteries.
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- Technical Physics Letters, 2020, v. 46, n. 2, p. 114, doi. 10.1134/S1063785020020042
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- Article
Fluorocarbon Carbonization of Nanocrystalline Silicon.
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- Technical Physics Letters, 2019, v. 45, n. 7, p. 664, doi. 10.1134/S1063785019070022
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- Publication type:
- Article
A study of the electrical properties of the porous GaP (111) surface.
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- Technical Physics Letters, 2016, v. 42, n. 11, p. 1118, doi. 10.1134/S1063785016110183
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- Publication type:
- Article
Porous Functional Coatings by Microarc Oxidation.
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- Glass & Ceramics, 2018, v. 75, n. 7/8, p. 258, doi. 10.1007/s10717-018-0067-9
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- Publication type:
- Article
Wire metamaterial based on semiconductor matrices.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409060
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- Article
From graphene oxide towards aminated graphene: facile synthesis, its structure and electronic properties.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-63935-3
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- Article
Anisotropy of porous silicon formation rate in p-Si.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 4, p. 723, doi. 10.1002/pssa.201200472
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- Article
Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface.
- Published in:
- JETP Letters, 2014, v. 98, n. 10, p. 614, doi. 10.1134/S0021364013230033
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- Article