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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400060
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- Article
Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing.
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- Physica Status Solidi (B), 2022, v. 259, n. 11, p. 1, doi. 10.1002/pssb.202200235
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- Article
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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- Article
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-00102-2
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- Article
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74362-9
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- Article
The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900755
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- Article
Preparation and characterization of cellulose acetate membranes with TEMPO-oxidized cellulose nanofibrils containing alkyl ammonium carboxylates.
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- Cellulose, 2020, v. 27, n. 3, p. 1357, doi. 10.1007/s10570-019-02872-5
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- Article
Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams.
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- Physica Status Solidi (B), 2019, v. 256, n. 10, p. N.PAG, doi. 10.1002/pssb.201900104
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- Article
Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams.
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- Physica Status Solidi (B), 2018, v. 255, n. 4, p. 1, doi. 10.1002/pssb.201700521
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- Article
Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700225
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- Article
Defect-Resistant Radiative Performance of m-Plane Immiscible Al<sub>1−</sub><sub>x</sub>In <sub>x</sub>N Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters.
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- Advanced Materials, 2017, v. 29, n. 5, p. n/a, doi. 10.1002/adma.201603644
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- Article
Recent Progress in Gas Barrier Thin Film Coatings on PET Bottles in Food and Beverage Applications.
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- Coatings (2079-6412), 2015, v. 5, n. 4, p. 987, doi. 10.3390/coatings5040987
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- Article
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam.
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- Physica Status Solidi (B), 2015, v. 252, n. 12, p. 2794, doi. 10.1002/pssb.201552345
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- Article
Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 913, doi. 10.1002/pssb.201451498
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- Article
Metal ion binding properties of novel wool powders.
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- Journal of Applied Polymer Science, 2010, v. 115, n. 3, p. 1642, doi. 10.1002/app.31206
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
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- Nature Materials, 2006, v. 5, n. 10, p. 810, doi. 10.1038/nmat1726
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Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions.
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- Applied Physics A: Materials Science & Processing, 1997, v. 65, n. 3, p. 315, doi. 10.1007/s003390050585
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- Article