Works by Tyagulsky, I. P.

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 34, doi. 10.15407/spqeo10.02.034

By:

• Lysenko, V. S.;
• Tyagulsky, I. P.;
• Osiyuk, I. N.;
• Nazarov, A. N.

Publication type:

Article