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Works by Tyagulskii, I. P.

Results: 3

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
Published in:
Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Sun, J. M.;
- Yankov, R. A.;
- Skorupa, W.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Prucnal, S.;
- Gebel, T.;
- Rebohle, L.
Publication type:
Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
By:
- Nazarov, A. N.;
- Skorupa, W.;
- Vovk, Ja. N.;
- Osiyuk, I. N.;
- Tkachenko, A. S.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Gebel, T.;
- Rebohle, L.;
- Yankov, R. A.;
- Nazarova, T. M.
Publication type:
Article
Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.
Published in:
Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390
By:
- Lysenko, V. S.;
- Tyagulskiı, I. P.;
- Osiyuk, I. N.;
- Nazarov, A. N.;
- Vovk, Ya. N.;
- Gomenyuk, Yu. V.;
- Terukov, E. I.;
- Kon’kov, O. I.
Publication type:
Article