Works by Turchanikov, V. I.

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 69, doi. 10.15407/spqeo9.02.069

By:

• Houk, Y.;
• Nazarov, A. N.;
• Turchanikov, V. I.;
• Lysenko, V. S.;
• Andriaensen, S.;
• Flandre, D.

Publication type:

Article