Found: 19
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Investigation of Optical and Diode Parameters of 9-[(5-Nitropyridin-2-Aminoethyl) Iminiomethyl]-Anthracene Thin Film.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2148, doi. 10.1007/s11664-020-08690-x
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- Article
Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts.
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- Gazi University Journal of Science, 2014, v. 27, n. 3, p. 901
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- Article
Laterally Inhomogeneous Barrier Analysis Using Capacitance-Voltage Characteristics of Identically Fabricated Schottky Diodes.
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- Journal of Electronic Materials, 2016, v. 45, n. 8, p. 3908, doi. 10.1007/s11664-016-4546-x
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Detailed Analysis of Device Parameters by Means of Different Techniques in Schottky Devices.
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- Journal of Electronic Materials, 2016, v. 45, n. 8, p. 3859, doi. 10.1007/s11664-016-4580-8
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- Article
Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 15, p. 1, doi. 10.1007/s10854-024-12749-4
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- Article
Investigation of Terp-Pyr/p-Si diode using complex impedance spectroscopy depending on measurement temperatures and frequencies.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 4, p. 1, doi. 10.1007/s10854-024-12029-1
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Structural and electrical characterization of Cd-doped ZnO thin films produced on p-type Si substrate by SILAR technique.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 25, p. 1, doi. 10.1007/s10854-023-11134-x
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- Article
Investigation of dielectric properties of amorphous, anatase, and rutile TiO<sub>2</sub> structures.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-023-09924-4
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Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 3, p. 1, doi. 10.1007/s10854-022-09659-8
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Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo<sub>2</sub>O<sub>4</sub>: Gelatin/n-Si diode.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 29, p. 22932, doi. 10.1007/s10854-022-09063-2
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- Article
Analysis of illumination dependent electrical characteristics of α- styryl substituted BODIPY dye-based hybrid heterojunction.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 16738, doi. 10.1007/s10854-021-06231-8
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- Article
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 15857, doi. 10.1007/s10854-021-06138-4
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AC conductivity, dielectric and electrical modulus studies of bulk Zn0.95Co0.05O ceramic.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 15837, doi. 10.1007/s10854-021-06136-6
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- Article
Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 15707, doi. 10.1007/s10854-021-06122-y
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Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 12513, doi. 10.1007/s10854-021-05886-7
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Optical dispersion and dielectric properties of rubrene organic semiconductor thin film.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3586, doi. 10.1007/s10854-014-2060-6
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- Article
The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 11, p. 2313, doi. 10.1002/pssa.201228163
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Structural and optical properties of Cu<sub>2</sub>ZnSnSe<sub>4</sub> nanocrystals thin film.
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- Optical & Quantum Electronics, 2024, v. 56, n. 7, p. 1, doi. 10.1007/s11082-024-07136-6
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Photosensitive properties of Schottky type photodiodes prepared by spin coating of isoniazid Schiff base thin film on p-Si.
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- Optical & Quantum Electronics, 2024, v. 56, n. 6, p. 1, doi. 10.1007/s11082-024-06770-4
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