Found: 16
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High-current pulse switching by thyristors triggered in the impact-ionization wave mode.
- Published in:
- Instruments & Experimental Techniques, 2017, v. 60, n. 4, p. 545, doi. 10.1134/S0020441217030204
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- Article
Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode.
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- Semiconductors, 2017, v. 51, n. 5, p. 649, doi. 10.1134/S1063782617050098
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- Article
High-Power Thyristor Switching via an Overvoltage Pulse with Nanosecond Rise Time.
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- Semiconductors, 2016, v. 50, n. 3, p. 394, doi. 10.1134/S1063782616030106
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- Article
A thyristor switch with a subnanosecond switching time.
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- Instruments & Experimental Techniques, 2015, v. 58, n. 3, p. 376, doi. 10.1134/S0020441215020189
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- Article
On the picosecond switching of a high-density current (60 kA/cm) via a Si closing switch based on a superfast ionization front.
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- Semiconductors, 2014, v. 48, n. 8, p. 1067, doi. 10.1134/S1063782614080132
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- Article
Generation of powerful microwave voltage oscillations in a diffused silicon diode.
- Published in:
- Semiconductors, 2013, v. 47, n. 5, p. 670, doi. 10.1134/S1063782613050151
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- Article
Operation of a semiconductor opening switch at ultrahigh current densities.
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- Semiconductors, 2012, v. 46, n. 4, p. 519, doi. 10.1134/S106378261204015X
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- Article
A SOS-Generator for technological applications.
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- Instruments & Experimental Techniques, 2011, v. 54, n. 1, p. 54, doi. 10.1134/S0020441211010118
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- Article
Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures.
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- Semiconductors, 2010, v. 44, n. 7, p. 931, doi. 10.1134/S1063782610070171
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- Article
Effect of space charge on subnanosecond current cutoff in powerful semiconductor diodes.
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- Technical Physics, 2009, v. 54, n. 11, p. 1591, doi. 10.1134/S1063784209110061
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- Article
Operation of a semiconductor opening switch at the pumping time of a microsecond and low current density.
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- Semiconductors, 2009, v. 43, n. 7, p. 953, doi. 10.1134/S1063782609070252
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- Publication type:
- Article
Simulation of the subnanosecond cutoff of current in high-power semiconductor diodes.
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- Semiconductors, 2009, v. 43, n. 7, p. 957, doi. 10.1134/S1063782609070264
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- Publication type:
- Article
A nanosecond SOS generator with a peak power of 4 GW.
- Published in:
- Instruments & Experimental Techniques, 2006, v. 49, n. 4, p. 516, doi. 10.1134/S0020441206040129
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- Publication type:
- Article
Ultrafast Current Switching Using the Tunneling-Assisted Impact Ionization Front in a Silicon Semiconductor Closing Switch.
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- Technical Physics Letters, 2005, v. 31, n. 3, p. 196, doi. 10.1134/1.1894430
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- Article
Investigation of the Process of Voltage Distribution over Elements of a High-Power Semiconductor Current Interrupter.
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- Technical Physics Letters, 2001, v. 27, n. 10, p. 857, doi. 10.1134/1.1414555
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- Publication type:
- Article
Subnanosecond Breakage of Current in High-Power Semiconductor Switches.
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- Technical Physics Letters, 2000, v. 26, n. 9, p. 824, doi. 10.1134/1.1315507
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- Article