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Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.
- Published in:
- Semiconductors, 2024, v. 58, n. 3, p. 284, doi. 10.1134/S1063782624030175
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- Publication type:
- Article
Multi-Phonon Relaxation of the 1s(T<sub>2</sub>) Triplet of Neutral Magnesium Donors in Silicon.
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- Semiconductors, 2024, v. 58, n. 3, p. 202, doi. 10.1134/S1063782624030023
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- Publication type:
- Article
Double Magnesium Donors as a Potential Active Medium in the Terahertz Range.
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- Semiconductors, 2024, v. 58, n. 1, p. 86, doi. 10.1134/S1063782624010172
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- Publication type:
- Article
The effects of high-intensity exercise on skeletal muscle neutrophil myeloperoxidase in untrained and trained rats.
- Published in:
- 2006
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- Publication type:
- journal article
MATHEMATICAL MODELING OF A MAGNETIC GEAR FOR AN AUTONOMOUS WIND TURBINE.
- Published in:
- Scientific Bulletin of National Mining University, 2024, n. 2, p. 88, doi. 10.33271/nvngu/2024-2/088
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- Publication type:
- Article
MATHEMATICAL SIMULATION OF AUTONOMOUS WIND ELECTRIC INSTALLATION WITH MAGNETOELECTRIC GENERATOR.
- Published in:
- Scientific Bulletin of National Mining University, 2022, v. 37, n. 5, p. 74, doi. 10.33271/nvngu/2022-5/074
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- Publication type:
- Article
JUSTIFICATION OF THE OPTIMUM OPERATION OF ELECTROMECHANICAL SYSTEM FOR PRODUCTION AND DISTRIBUTION OF PRESSURIZED AIR.
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- Scientific Bulletin of National Mining University, 2019, n. 2, p. 101, doi. 10.29202/nvngu/2019-2/13
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- Publication type:
- Article
MACHINE-TRANSFORMER UNITS FOR WIND TURBINES.
- Published in:
- Electrical Engineering & Electromechanics, 2016, n. 1, p. 33, doi. 10.20998/2074-272X.2016.1.06
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- Publication type:
- Article
Detection of Ramsey Oscillations in Germanium Doped with Shallow Donors upon the Excitation of the 1s → 2p<sub>0</sub> Transition.
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- JETP Letters, 2022, v. 116, n. 3, p. 137, doi. 10.1134/S0021364022601191
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- Publication type:
- Article
Relaxation Times and Population Inversion of Excited States of Arsenic Donors in Germanium.
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- JETP Letters, 2019, v. 110, n. 10, p. 677, doi. 10.1134/S0021364019220144
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- Publication type:
- Article
Low-temperature intracenter relaxation times of shallow donors in germanium.
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- JETP Letters, 2017, v. 106, n. 9, p. 571, doi. 10.1134/S0021364017210147
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- Publication type:
- Article
Polarization of the induced THz emission of donors in silicon.
- Published in:
- Semiconductors, 2016, v. 50, n. 12, p. 1673, doi. 10.1134/S1063782616120101
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- Publication type:
- Article
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon.
- Published in:
- Semiconductors, 2016, v. 50, n. 11, p. 1458, doi. 10.1134/S1063782616110270
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- Publication type:
- Article
Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures.
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- Semiconductors, 2015, v. 49, n. 1, p. 13, doi. 10.1134/S1063782615010273
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- Publication type:
- Article
On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon.
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- Semiconductors, 2014, v. 48, n. 8, p. 1017, doi. 10.1134/S1063782614080247
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- Publication type:
- Article
Shallow-donor lasers in uniaxially stressed silicon.
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- Semiconductors, 2013, v. 47, n. 2, p. 235, doi. 10.1134/S1063782613020152
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- Publication type:
- Article
Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon.
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- Semiconductors, 2009, v. 43, n. 11, p. 1410, doi. 10.1134/S1063782609110037
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- Publication type:
- Article
Relaxation of excited donor states in silicon with emission of intervalley phonons.
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- Semiconductors, 2008, v. 42, n. 9, p. 1016, doi. 10.1134/S1063782608090030
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- Publication type:
- Article
Dynamics of non-equilibrium charge carriers in p-germanium doped by gallium.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 6, p. n/a, doi. 10.1002/pssb.201600803
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- Publication type:
- Article
Quantitative Analysis of Valley–Orbit Coupling in Germanium Doped with Group-V Donors.
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- Semiconductors, 2021, v. 55, n. 12, p. 879, doi. 10.1134/S1063782621100201
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- Publication type:
- Article
Intervalley Relaxation Processes of Shallow Donor States in Germanium.
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- Semiconductors, 2021, v. 55, n. 10, p. 799, doi. 10.1134/S1063782621090232
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- Publication type:
- Article
Relaxation of the Excited States of Arsenic in Strained Germanium.
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- Semiconductors, 2020, v. 54, n. 10, p. 1347, doi. 10.1134/S1063782620100188
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- Publication type:
- Article
Influence of Uniaxial Deformation along the [110] Direction on the Relaxation of Arsenic Shallow Donor States in Germanium.
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- Semiconductors, 2020, v. 54, n. 9, p. 1108, doi. 10.1134/S1063782620090286
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- Publication type:
- Article
Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi.
- Published in:
- Semiconductors, 2020, v. 54, n. 8, p. 969, doi. 10.1134/S1063782620080278
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- Publication type:
- Article
On the Possibility of Ramsey Interference in Germanium Doped with Shallow Impurities.
- Published in:
- Semiconductors, 2020, v. 54, n. 8, p. 961, doi. 10.1134/S1063782620080242
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- Publication type:
- Article
On the Intracenter Relaxation of Shallow Antimony Donors in Strained Germanium.
- Published in:
- Semiconductors, 2019, v. 53, n. 10, p. 1334, doi. 10.1134/S1063782619100221
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- Publication type:
- Article
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.
- Published in:
- Semiconductors, 2019, v. 53, n. 9, p. 1234, doi. 10.1134/S1063782619090197
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- Publication type:
- Article
On the Intracenter Relaxation of Shallow Arsenic Donors in Stressed Germanium. Population Inversion under Optical Excitation.
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- Semiconductors, 2018, v. 52, n. 12, p. 1573, doi. 10.1134/S1063782618120254
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- Publication type:
- Article