Works by Trapeznikova, I. N.

Results: 22

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (= 21.5 mol %).
Published in:
Semiconductors, 2019, v. 53, n. 11, p. 1514, doi. 10.1134/S1063782619110228
By:
- Undalov, Yu. K.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1114, doi. 10.1134/S1063782619080244
By:
- Abolmasov, S. N.;
- Abramov, A. S.;
- Semenov, A. V.;
- Shakhray, I. S.;
- Terukov, E. I.;
- Malchukova, E. V.;
- Trapeznikova, I. N.
Publication type:
Article
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4-Ar-O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( = 15.5 mol %).
Published in:
Semiconductors, 2018, v. 52, n. 10, p. 1255, doi. 10.1134/S1063782618100214
By:
- Undalov, Yu. K.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate.
Published in:
Technical Physics Letters, 1997, v. 23, n. 2, p. 160, doi. 10.1134/1.1261571
By:
- Kompan, M. E.;
- Kon’kov, O. I.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Shabanov, I. Yu.
Publication type:
Article
Measurement of the amount of free and bound hydrogen in amorphous carbon.
Published in:
Technical Physics Letters, 1997, v. 23, n. 1, p. 9, doi. 10.1134/1.1261626
By:
- Kon’kov, O. I.;
- Kapitonov, I. N.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Photoluminescence and Photoconductivity of Lead Halide Perovskite Films Modified with Mixed Cellulose Esters.
Published in:
Technical Physics, 2021, v. 66, n. 7, p. 827, doi. 10.1134/S1063784221060025
By:
- Aleshin, A. N.;
- Shirinkin, P. P.;
- Khripunov, A. K.;
- Saprykina, N. N.;
- Shcherbakov, I. P.;
- Trapeznikova, I. N.;
- Aleshin, P. A.;
- Petrov, V. N.
Publication type:
Article
The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 426, doi. 10.1134/S1063782610040032
By:
- Mezdrogina, M. M.;
- Danilevskii, E. Yu.;
- Kuz'min, R. V.;
- Poletaev, N. K.;
- Trapeznikova, I. N.;
- Chukichev, M. V.;
- Bordovskii, G. A.;
- Marchenko, A. V.;
- Eremenko, M. V.
Publication type:
Article
Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1327, doi. 10.1134/S106378260811016X
By:
- Undalov, Yu. K.;
- Terukov, E. I.;
- Gusev, O. B.;
- Lebedev, V. M.;
- Trapeznikova, I. N.
Publication type:
Article
A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 830, doi. 10.1134/1.1992643
By:
- Terekhov, V. A.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Kashkarov, V. M.;
- Kurilo, O. V.;
- Turishchev, S. Yu.;
- Golodenko, A. B.;
- Domashevskaya, É. P.
Publication type:
Article
TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films.
Published in:
Semiconductors, 2004, v. 38, n. 2, p. 221, doi. 10.1134/1.1648381
By:
- Afanasiev, V. P.;
- Gudovskikh, A. S.;
- Kazak-Kazakevich, A. Z.;
- Sazanov, A. P.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric and Nonstoichiometric Arsenic Sulfide.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 748, doi. 10.1134/1.1592843
By:
- Babaev, A. A.;
- Kamilov, I. K.;
- Vagabova, Z. V.;
- Sultanov, S. M.;
- Askhabov, A. M.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Effect of Rare-Earth Impurities on the Photoluminescence of Ge[sub 2]S[sub 3] Glass.
Published in:
Semiconductors, 2003, v. 37, n. 7, p. 800, doi. 10.1134/1.1592853
By:
- Babaev, A. A.;
- Kamilov, I. K.;
- Vagabova, Z. V.;
- Sultanov, S. M.;
- Askhabov, A. M.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films.
Published in:
Semiconductors, 2002, v. 36, n. 11, p. 1252, doi. 10.1134/1.1521226
By:
- Mezdrogina, M. M.;
- Trapeznikova, I. N.;
- Terukov, E. I.;
- Nasredinov, F. S.;
- Seregin, N. P.;
- Seregin, P. P.
Publication type:
Article
Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition.
Published in:
Semiconductors, 2002, v. 36, n. 2, p. 230
By:
- Afanas’ev, V. P.;
- Gudovskikh, A. S.;
- Nevedomskiı, V. N.;
- Sazanov, A. P.;
- Sitnikova, A. A.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.
Published in:
Semiconductors, 2001, v. 35, n. 6, p. 684, doi. 10.1134/1.1379404
By:
- Mezdrogina, M. M.;
- Mosina, G. N.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.
Published in:
Semiconductors, 2001, v. 35, n. 3, p. 353, doi. 10.1134/1.1356161
By:
- Kurova, I. A.;
- Ormont, N. N.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Afanas’ev, V. P.;
- Gudovskikh, A. S.
Publication type:
Article
Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 477
By:
- Afanas’ev, V. P.;
- Gudovskikh, A. S.;
- Kon’kov, O. I.;
- Kazanin, M. M.;
- Kougiya, K. V.;
- Sazanov, A. P.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Energy Distribution of Localized States in Amorphous Hydrogenated Silicon.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 81, doi. 10.1134/1.1187950
By:
- Kougiya, K. V.;
- Terukov, E. I.;
- Trapeznikova, I. N.
Publication type:
Article
Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.
Published in:
Semiconductors, 1999, v. 33, n. 10, p. 1145, doi. 10.1134/1.1187884
By:
- Mezdrogina, M. M.;
- Annaorazova, M. P.;
- Terukov, E. I.;
- Trapeznikova, I. N.;
- Nazarov, N.
Publication type:
Article
Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them
Published in:
Semiconductors, 1998, v. 32, n. 5, p. 555, doi. 10.1134/1.1187437
By:
- Mezdrogina, M. M.;
- Abramov, A. V.;
- Mosina, G. N.;
- Trapeznikova, I. N.;
- Patsekin, A. V.
Publication type:
Article
An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions.
Published in:
Technical Physics Letters, 2019, v. 45, n. 6, p. 553, doi. 10.1134/S1063785019060099
By:
- Ivanov-Omskii, V. I.;
- Mynbaev, K. D.;
- Trapeznikova, I. N.;
- Andryushchenko, D. A.;
- Bazhenov, N. L.;
- Mikhailov, N. N.;
- Varavin, V. S.;
- Remesnik, V. G.;
- Dvoretskii, S. A.;
- Yakushev, M. V.
Publication type:
Article
The Influence of Molecular Structure Modification on the Photoluminescence and Optical Absorption of Thin Copper Phthalocyanine Films in the Near-IR Range.
Published in:
Technical Physics Letters, 2005, v. 31, n. 9, p. 782, doi. 10.1134/1.2061746
By:
- Kazanskiĭ, A. G.;
- Terukov, E. I.;
- Ziminov, A. V.;
- Gusev, O. B.;
- Fenukhin, A. V.;
- Kolosko, A. G.;
- Trapeznikova, I. N.;
- Nikolaev, Yu. A.;
- Bey Modu
Publication type:
Article

Works by Trapeznikova, I. N.

Formation of ncl-Si in the Amorphous Matrix a-SiO<sub>x</sub>:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH<sub>4</sub>–Ar–O<sub>2</sub>) Gas Phase (= 21.5 mol %).

Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.

Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH<sub>4</sub>-Ar-O<sub>2</sub>) Gas Phase on ncl-Si Growth in an a-SiO<sub>x</sub>:H matrix ( = 15.5 mol %).

Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate.

Measurement of the amount of free and bound hydrogen in amorphous carbon.

Photoluminescence and Photoconductivity of Lead Halide Perovskite Films Modified with Mixed Cellulose Esters.

The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.

Effect of electric field in the course of obtaining a-SiO<sub> x </sub>:H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.

A Study of the Local Electronic and Atomic Structure in a-Si<sub>x</sub>C<sub>1 – </sub><sub>x</sub> Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.

TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films.

The Influence of a High and Low Content of Au Impurity on the Photoluminescence of Stoichiometric and Nonstoichiometric Arsenic Sulfide.

Effect of Rare-Earth Impurities on the Photoluminescence of Ge[sub 2]S[sub 3] Glass.

Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films.

Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition.

Self-Organization Processes and Optical Activation of the Er[sup 3+] Ions in Amorphous Hydrogenated Er-Doped Silicon Films.

Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing.

Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.

Energy Distribution of Localized States in Amorphous Hydrogenated Silicon.

Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.

Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions.

The Influence of Molecular Structure Modification on the Photoluminescence and Optical Absorption of Thin Copper Phthalocyanine Films in the Near-IR Range.